Structural and optoelectronic properties of cubic Zn1--Be Mg Se quaternary alloys nearly lattice matched to GaAs substrate: A density functional investigation

Waag, 1998, J. Cryst. Growth, 184/185, 1, 10.1016/S0022-0248(98)80283-2 Onodera, 2009, Jpn. J. Appl. Phys., 48 Landwehr, 1997, Phys. Status Solidi B, 202, 645, 10.1002/1521-3951(199708)202:2<645::AID-PSSB645>3.0.CO;2-G Verie, 1997, Mater. Sci. Eng. B, 43, 60, 10.1016/S0921-5107(96)01833-8 Waag, 1997, Mater. Sci. Eng. B, 43, 65, 10.1016/S0921-5107(96)01911-3 Nelmes, 1998, Semiconduct. Semimet., 54, 145, 10.1016/S0080-8784(08)60231-8 Jobst, 1996, Appl. Phys. Lett., 69, 97, 10.1063/1.118132 Okuyama, 1992, J. Cryst. Growth, 117, 139, 10.1016/0022-0248(92)90732-X Luo, 1995, Phys. Rev. B, 52, 7058, 10.1103/PhysRevB.52.7058 Van Vechten, 1969, Phys. Rev., 187, 1007, 10.1103/PhysRev.187.1007 Yim, 1972, J. Phys. Chem. Solid., 33, 501, 10.1016/0022-3697(72)90032-7 Waag, 1996, J. Appl. Phys., 80, 792, 10.1063/1.362888 Waag, 1997, Appl. Phys. Lett., 70, 280, 10.1063/1.118422 Lee, 1970, J. Appl. Phys., 41, 2988, 10.1063/1.1659350 Abrikosov, 1969 1982, vol. 17b 1996 Okuyama, 1992, J. Cryst. Growth, 117, 139, 10.1016/0022-0248(92)90732-X Greene, 1995, J. Phys. Chem. Solid., 56, 521, 10.1016/0022-3697(95)80020-4 Watanabe, 1997, J. Appl. Phys., 81, 451, 10.1063/1.364079 Okuyama, 1991, Jpn. J. Appl. Phys., 30, Ll620, 10.1143/JJAP.30.1808 Strehlow, 1973, J. Phys. Chem. Ref. Data, 2, 163, 10.1063/1.3253115 Wilmers, 1999, Phys. Rev. B, 59, 10071, 10.1103/PhysRevB.59.10071 Wilmers, 1999, J. Electron. Matr., 28, 670, 10.1007/s11664-999-0052-8 Wagner, 1999, Phys. Status Solidi B, 215, 87, 10.1002/(SICI)1521-3951(199909)215:1<87::AID-PSSB87>3.0.CO;2-D Manabe, 1967, Jpn. J. Appl. Phys., 6, 593, 10.1143/JJAP.6.593 Bilal, 2014, J. Semiconduct., 35, 10.1088/1674-4926/35/7/072001 Wang, 2012, Condens. Matter Phys., 15, 13705, 10.5488/CMP.15.13705 Casali, 1998, Solid State Commun., 108, 793, 10.1016/S0038-1098(98)00303-2 Corsa, 1993, Phys. Rev., B47, 3588, 10.1103/PhysRevB.47.3588 Gokoglu, 2009, Comput. Mater. Sci., 47, 593, 10.1016/j.commatsci.2009.09.029 Drief, 2004, Catal. Today, 89, 343, 10.1016/j.cattod.2003.12.013 Duman, 2006, Phys. Rev. B, 73, 205201, 10.1103/PhysRevB.73.205201 Sajid, 2013, Chin. J. Phys., 51, 316 Kootstra, 2000, Phy. Rev. B, 62, 7071, 10.1103/PhysRevB.62.7071 Berghout, 2006, J. Phys. Condens. Matter, 18, 10365, 10.1088/0953-8984/18/46/005 Stukel, 1970, Phys. Rev. B, 2, 1852, 10.1103/PhysRevB.2.1852 Gonzalez-Dıaz, 1997, Phys. Rev. B, 55, 14043, 10.1103/PhysRevB.55.14043 Guo, 2013, J. Alloys Compd., 561, 16, 10.1016/j.jallcom.2013.01.144 Okoye, 2004, Eur. Phys. J. B, 39, 5, 10.1140/epjb/e2004-00164-3 Kalpana, 1998, Int. J. Mod. Phys. B, 12, 1975, 10.1142/S0217979298001149 Rai, 2014, Semiconductors, 48, 1411, 10.1134/S1063782614110244 Khan, 2013, J. Phys. Chem. Solid., 74, 181, 10.1016/j.jpcs.2012.08.012 El Haj Hassan, 2006, Comp. Mat. Sci., 35, 423, 10.1016/j.commatsci.2005.02.010 Heciri, 2007, Comp. Mat. Sci., 38, 609, 10.1016/j.commatsci.2006.04.003 Al-Douri, 2012, Physica B, 407, 286, 10.1016/j.physb.2011.09.127 El Haj Hassan, 2005, Phys. Stat. Sol. b, 242, 909, 10.1002/pssb.200402110 Srivastava, 2004, Phys. Rev. B, 70, 85206, 10.1103/PhysRevB.70.085206 Khenata, 2006, Solid State Electron., 50, 1382, 10.1016/j.sse.2006.06.019 Mameria, 2010, Mater. Chem. Phys., 123, 343, 10.1016/j.matchemphys.2010.04.037 Okuyama, 1998, Phys. Rev. B, 57, 2257, 10.1103/PhysRevB.57.2257 Charifi, 2005, J. Phys. Condens. Matter, 17, 7077, 10.1088/0953-8984/17/44/001 Ullah, 2014, Mater. Sci. Semicond. Process., 26, 681, 10.1016/j.mssp.2014.09.016 Murtaza, 2015, Mater. Sci. Semicond. Process., 30, 462, 10.1016/j.mssp.2014.10.048 Charifi, 2003, Physica B, 337, 363, 10.1016/S0921-4526(03)00428-9 El Haj Hassan, 2007, J. Phys. Condens. Matter, 19, 386234, 10.1088/0953-8984/19/38/386234 Sabir, 2018, Chin. Phys. B, 27, 10.1088/1674-1056/27/1/016101 Baaziz, 2006, Phys. Stat. Sol. b, 243, 1296, 10.1002/pssb.200541481 Noor, 2012, Physica B, 407, 943, 10.1016/j.physb.2011.12.107 Miyajima, 1995, Appl. Phys. Lett., 66, 180, 10.1063/1.113127 Cho, 1999, J. Cryst. Growth, 201–202, 957, 10.1016/S0022-0248(98)01505-X Chang, 2000, Physica E, 7, 576, 10.1016/S1386-9477(99)00387-2 Song, 2003, J. Cryst. Growth, 258, 368, 10.1016/S0022-0248(03)01558-6 Chauvet, 1999, J. Electron. Mater., 28, 662, 10.1007/s11664-999-0050-x Tournie, 1999, Appl. Phys. Lett., 75, 382, 10.1063/1.124382 Tournie, 2001, J. Cryst. Growth, 223, 461, 10.1016/S0022-0248(01)00621-2 Wagner, 2000, J. Cryst. Growth, 214–215, 340, 10.1016/S0022-0248(00)00104-4 Vigue, 2001, Appl. Phys. Lett., 78, 4190, 10.1063/1.1381415 Godo, 2001, Appl. Phys. Lett., 79, 4168, 10.1063/1.1424064 Godo, 2002, J. Appl. Phys., 91, 5811, 10.1063/1.1468279 Pages, 2004, J. Appl. Phys., 95, 7690, 10.1063/1.1738522 Ajjoun, 2004, J. Alloys Compd., 382, 271, 10.1016/j.jallcom.2004.05.045 Derkowska, 2010, Opto-Electon. Rev., 18, 384 Firszt, 2000, J. Cryst. Growth, 214/215, 880, 10.1016/S0022-0248(00)00251-7 Naeemullah, 2016, Mod. Phys. Lett. B, 30, 1650007, 10.1142/S021798491650007X Blaha, 2001 Hohenberg, 1964, Phys. Rev. B, 136, 864, 10.1103/PhysRev.136.B864 Kohn, 1965, Phys. Rev., 140, A1133, 10.1103/PhysRev.140.A1133 Andersen, 1975, Phys. Rev. B, 42, 3063 Perdew, 1996, Phys. Rev. Lett., 77, 3865, 10.1103/PhysRevLett.77.3865 Engel, 1993, Phys. Rev. B, 47, 13164, 10.1103/PhysRevB.47.13164 Tran, 2009, Phys. Rev. Lett., 102, 226401, 10.1103/PhysRevLett.102.226401 Kokalj, 2003, Comput. Mater. Sci., 28, 155, 10.1016/S0927-0256(03)00104-6 Murnaghan, 1944, Proc. Natl. Acad. Sci. U.S.A., 30, 244, 10.1073/pnas.30.9.244 Vegard, 1921, Z. Phys., 5, 17, 10.1007/BF01349680 Fox, 2001 Ullah, 2014, Phase Transitions, 87, 571, 10.1080/01411594.2014.886110 Ashcroft, 1976 Murtaza, 2011, Physica B, 406, 2632, 10.1016/j.physb.2011.04.004 Ahmadian, 2016, J. Kor. Phys. Soc., 68, 227, 10.3938/jkps.68.227 Dadsetani, 2006, Phys. Rev. B, 73, 195102, 10.1103/PhysRevB.73.195102 Penn, 1962, Phys. Rev., 128, 2093, 10.1103/PhysRev.128.2093 Dressel, 2001