Strained-layer relaxation in fcc structures via the generation of partial dislocations

Physical Review Letters - Tập 66 Số 6 - Trang 739-742
D. M. Hwang1, S. A. Schwarz1, T. S. Ravi1, R. Bhat1, C. Y. Chen1
1Bellcore, Red Bank, New Jersey 07701

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