Spectral response measurements of multijunction solar cells with low shunt resistance and breakdown voltages

Energy Science and Engineering - Tập 4 Số 6 - Trang 372-382 - 2016
Juan Pablo Babaro1, Kevin G. West2, Behrang H. Hamadani3
1Instituto Nacional de Tecnología Industrial‐ Física y Metrología San Martín Buenos Aires Argentina
2SensorMetrix, San Diego, California, 92126
3National Institute of Standards and Technology, Engineering Laboratory, Gaithersburg, Maryland, 20899

Tóm tắt

AbstractSpectral response measurements of germanium‐based triple‐junction solar cells were performed under a variety of light and voltage bias conditions. Two of the three junctions exhibited voltage and light bias‐dependent artifacts in their measured responses, complicating the true spectral response of these junctions. To obtain more insight into the observed phenomena, a set of current‐voltage measurement combinations were also performed on the solar cells under identical illumination conditions, and the data were used in the context of a diode‐based analytical model to calculate and predict the spectral response behavior of each junction as a function of voltage. The analysis revealed that both low shunt resistance and low breakdown voltages in two of the three junctions influenced the measured quantum efficiency of all three junctions. The data and the modeling suggest that combination of current‐voltage measurements under various light bias sources can reveal important information about the spectral response behavior in multijunction solar cells.

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Energy Science and Engineering

Tập 4 Số 6

372-382

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