Sn doping for InP and InGaAs grown by metalorganic molecular beam epitaxy using tetraethyltin

Journal of Crystal Growth - Tập 95 - Trang 181-184 - 1989
Yoshihiro Kawaguchi1, Kiichi Nakashima1
1NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan

Tài liệu tham khảo

Tsang, 1986, J. Appl. Phys., 60, 4182, 10.1063/1.337503 Heinecke, 1987, J. Crystal Growth, 81, 270, 10.1016/0022-0248(87)90403-9 Kimura, 1987, J. Crystal Growth, 81, 276, 10.1016/0022-0248(87)90404-0 Kawaguchi, 1987, Appl. Phys. Letters, 50, 1243, 10.1063/1.97922 Walkiewicz, 1980, J. Appl. Phys., 51, 2659, 10.1063/1.327925 Takeda, 1982 Ploog, 1978, J. Vacuum Sci. Technol., 15, 255, 10.1116/1.569563 Kennedy, 1968, IBM J. Res. Develop., 12, 399, 10.1147/rd.125.0399 S. Uehara, M. Ikeda, Y. Kawaguchi, Y. Akahori and S. Hata, ECOC'88.