Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

Springer Science and Business Media LLC - Tập 396 - 1995
Shu Qin1, J.D. Bernstein1, Yuanzhong Zhou1, Wei Liu1, Chung Chan2, Tsu‐Jae King3
1Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
2Eaton Corp., Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, MA, 01915, USA
3Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA

Tóm tắt

AbstractPlasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.

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Tài liệu tham khảo

10.1109/16.158808

10.1063/1.356446

10.1109/55.464804

10.1143/JJAP.32.2601

10.1109/EDL.1980.25272

10.1016/0168-583X(91)96285-S

Bernstein, 1995, ΓΕΕΕ Trans, on Electron Devices submitted

10.1109/55.75757

10.1063/1.102543

10.1063/1.339055

Ziegler, 1985, The Stopping Range of Ions in Solids

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Springer Science and Business Media LLC

Tập 396

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