Semiconductor surface passivation

Materials Science Reports - Tập 3 - Trang 139-216 - 1988
L.G. Meiners1, H.H. Wieder1
1Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-1114, USA

Tài liệu tham khảo

Feigl, 1983, Vol. 6 Atalla, 1959, Bell Syst. Tech. J., 38, 749, 10.1002/j.1538-7305.1959.tb03907.x Tamm, 1932, Z. Physik, 76, 849, 10.1007/BF01341581 Shockley, 1939, Phys. Rev., 56, 317, 10.1103/PhysRev.56.317 Terman, 1962, Solid State Electron., 5, 285, 10.1016/0038-1101(62)90111-9 Linder, 1962, Bell Syst. Tech. J., 41, 803, 10.1002/j.1538-7305.1962.tb00477.x Garrett, 1955, Phys. Rev., 99, 376, 10.1103/PhysRev.99.376 Grove, 1965, Solid State Electron., 8, 145, 10.1016/0038-1101(65)90046-8 Deal, 1967, J. Electrochem. Soc., 114, 1967, 10.1149/1.2426565 Balk, 1965, 53, 2133 Warburg, 1978, Ann. Physik, 35, 455 Snow, 1965, J. Appl. Phys., 36, 1664, 10.1063/1.1703105 Montillo, 1971, J. Electrochem. Soc., 118, 1463, 10.1149/1.2408355 Deal, 1974, J. Electrochem. Soc., 121, 1986, 10.1149/1.2402380 Pan, 1987, J. Appl. Phys., 61, 184 Kriegler, 1972, J. Electrochem. Soc., 119, 388, 10.1149/1.2404208 van der Meulen, 1975, J. Electrochem. Soc., 122, 284, 10.1149/1.2134196 Rohatgi, 1979, J. Electrochem. Soc., 126, 150 Young, 1973, J. Electrochem. Soc., 120, 1578, 10.1149/1.2403307 Hofstein, 1967, IEEE Trans. Electron Devices ED-14, 785, 10.1109/T-ED.1967.16108 Esqueda, 1980, Solid State Electron., 23, 741, 10.1016/0038-1101(80)90131-8 Osburn, 1973, J. Electrochem. Soc., 121, 809, 10.1149/1.2401924 Monkowski, 1979, Solid State Technol., 22, 113, 10.1016/0038-1101(79)90182-5 Young, 1973, J. Electrochem. Soc., 120, 1578, 10.1149/1.2403307 Baccarani, 1973, J. Electrochem. Soc., 120, 1436, 10.1149/1.2403278 Shiraki, 1977, 546 Shiraki, 1976, Japan. J. Appl. Phys., 15, 83, 10.1143/JJAP.15.83 Shiraki, 1976, Japan. J. Appl. Phys., 15, 1, 10.1143/JJAP.15.1 Hattori, 1976, J. Electrochem. Soc., 123, 945, 10.1149/1.2132974 Hattori, 1977, Appl. Phys. Letters, 30, 312, 10.1063/1.89404 Chen, 1972, J. Electrochem. Soc., 119, 223, 10.1149/1.2404165 Monkowski, 1978, J. Electrochem. Soc., 125, 1867, 10.1149/1.2131312 Hess, 1977, Thin Solid Films, 42, 127, 10.1016/0040-6090(77)90086-4 Grunthaner, 1986, 1 Gerardi, 1986, Appl. Phys. Letters, 49, 348, 10.1063/1.97611 Chu, 1967, Solid State Electron., 10, 897, 10.1016/0038-1101(67)90003-2 Deal, 1968, J. Electrochem. Soc., 115, 300, 10.1149/1.2411146 Deal, 1969, J. Electrochem. Soc., 116, 997, 10.1149/1.2412205 Duffy, 1970, RCA Rev., 31, 742 Gereth, 1972, J. Electrochem. Soc., 119, 1248, 10.1149/1.2404452 Gaind, 1976, J. Electrochem. Soc., 123, 111, 10.1149/1.2132741 Gaind, 1976, J. Electrochem. Soc., 123, 238, 10.1149/1.2132794 Gaind, 1979, Solid State Electron., 22, 303, 10.1016/0038-1101(79)90040-6 Kasprzak, 1980, IBM J. Res. Develop., 24, 348, 10.1147/rd.243.0348 Kuhn, 1970, Solid State Electron., 13, 873, 10.1016/0038-1101(70)90073-0 Snow, 1966, J. Electrochem. Soc., 113, 263, 10.1149/1.2423929 Kern, 1970, J. Electrochem. Soc., 117, 562, 10.1149/1.2407572 Wang, 1970, RCA Rev., 31, 728 Duffy, 1970, RCA Rev., 31, 754 Tong, 1986, IEEE Trans. Electron Devices, ED-33, 779, 10.1109/T-ED.1986.22568 Weinberger, 1985, J. Vacuum Sci. Technol., A3, 887, 10.1116/1.573340 Yablonovitch, 1986, Phys. Rev. Letters, 57, 249, 10.1103/PhysRevLett.57.249 Lee, 1982, IEEE Electron Device Letters, EDL-3, 310, 10.1109/EDL.1982.25580 Gaspard, 1986, 251 Morita, 1985, Appl. Phys. Letters, 47, 253, 10.1063/1.96181 Ligenza, 1965, J. Appl. Phys., 36, 2703, 10.1063/1.1714565 Ray, 1981, J. Electrochem. Soc., 128, 2466, 10.1149/1.2127271 Pulfrey, 1974, Solid State Electron., 17, 627, 10.1016/0038-1101(74)90184-1 McCaughan, 1973, Intern. J. Electron., 34, 737, 10.1080/00207217308938492 Ho, 1981, IEEE Trans. Electron Devices, ED-28, 1060 Atanassova, 1986, Thin Solid Films, 137, 235, 10.1016/0040-6090(86)90025-8 Brattain, 1953, Bell Syst. Tech. J., 32, 1, 10.1002/j.1538-7305.1953.tb01420.x Law, 1957, J. Electrochem. Soc., 104, 154, 10.1149/1.2428524 Sedgwick, 1968, J. Appl. Phys., 39, 5066, 10.1063/1.1655925 Yashiro, 1970, Japan. J. Appl. Phys., 9, 740, 10.1143/JJAP.9.740 Wang, 1976, J. Electrochem. Soc., 123, 1392, 10.1149/1.2133083 Dinger, 1976, J. Electrochem. Soc., 123, 1398, 10.1149/1.2133084 Nagai, 1968, J. Electrochem. Soc., 115, 672, 10.1149/1.2411387 Yashiro, 1972, J. Electrochem. Soc., 119, 780, 10.1149/1.2404328 Mishchenko, 1979, Soviet Microelectron., 8, 372 Iwauchi, 1971, Japan. J. Appl. Phys., 10, 260, 10.1143/JJAP.10.260 Chang, 1986, Appl. Phys. Letters, 49, 1534, 10.1063/1.97273 Phillips, 1982, Solid State Phys., 37, 92 Chrisman, 1978, Electron. Letters, 23, 10 Manasevit, 1968, Appl. Phys. Letters, 12, 156, 10.1063/1.1651934 Manasevit, 1969, J. Electrochem. Soc., 116, 1725, 10.1149/1.2411685 Manasevit, 1972, J. Electrochem. Soc., 119, 99, 10.1149/1.2404145 Manasevit, 1974, J. Crystal Growth, 22, 125, 10.1016/0022-0248(74)90129-8 Cho, 1979, Solid State Commun., 8, 377, 10.1016/0038-1098(67)90122-6 Sullivan, 1984, Appl. Phys. Letters, 44, 190, 10.1063/1.94704 Sinhroy, 1985, Vol. 86-3, 313 Siskos, 1984, Appl. Phys. Letters, 44, 1146, 10.1063/1.94672 Tsutsui, 1987, IEEE Electron Device Letters, EDL-8, 277, 10.1109/EDL.1987.26629 Tsutsui, 1986, Appl. Phys. Letters, 48, 587, 10.1063/1.96475 Sullivan, 1985, J. Vacuum Sci. Technol., B3, 500, 10.1116/1.583306 Casey, 1979, Appl. Phys. Letters, 34, 594, 10.1063/1.90886 Lyon, 1987, Appl. Phys. Letters, 50, 1903, 10.1063/1.97681 Nelson, 1980, Appl. Phys. Letters, 36, 76, 10.1063/1.91280 Sandroff, 1987, Appl. Phys. Letters, 51, 33, 10.1063/1.98877 Massies, 1981, Appl. Phys. Letters, 38, 693, 10.1063/1.92473 Offsey, 1986, Appl. Phys. Letters, 48, 475, 10.1063/1.96535 Woodall, 1979, J. Vacuum Sci. Technol., 16, 1389, 10.1116/1.570206 Bottka, 1987, Vol. B-3, 4 Capasso, 1982, J. Electrochem. Soc., 129, 821, 10.1149/1.2123979 Friedel, 1987, J. Vacuum Sci. Technol., B5, 1129, 10.1116/1.583741 Boher, 1987, Appl. Surface Sci., 30, 100, 10.1016/0169-4332(87)90080-8 Besser, 1988, Appl. Phys. Letters, 52, 1707, 10.1063/1.99024 Gyulai, 1970, Appl. Phys. Letters, 17, 332, 10.1063/1.1653422 Ohdomari, 1978, Appl. Phys. Letters, 32, 218, 10.1063/1.89996 Vaidyanathan, 1977, J. Electrochem. Soc., 124, 1781, 10.1149/1.2133156 Campbell, 1984, Appl. Phys. Letters, 45, 95, 10.1063/1.94982 Zuleeg, 1978, IEEE Trans. Electron Devices, ED-25, 628, 10.1109/T-ED.1978.19147 Eden, 1982, 673 Chen, 1985, IEEE Trans. Electron Devices, ED-32, 18, 10.1109/T-ED.1985.21903 Dumas, 1986, 75 Meiners, 1978, J. Vacuum Sci. Technol., 15, 1402, 10.1116/1.569796 Berglund, 1966, IEEE Trans. Electron Devices, ED-13, 701, 10.1109/T-ED.1966.15827 Meiners, 1978, Appl. Phys. Letters, 33, 747, 10.1063/1.90526 Kohn, 1978, Solid State Electron., 21, 409, 10.1016/0038-1101(78)90271-X Gerlich, 1962, J. Appl. Phys., 33, 1815, 10.1063/1.1728838 Pilkuhn, 1964, J. Phys. Chem. Solids, 25, 141, 10.1016/0022-3697(64)90171-4 Flinn, 1964, Surface Sci., 2, 136, 10.1016/0039-6028(64)90052-4 Butcher, 1977, Electron. Letters, 13, 558, 10.1049/el:19770400 Hasegawa, 1975, Appl. Phys. Letters, 12, 567, 10.1063/1.87994 Weimann, 1976, Thin Solid Films, 38, L5, 10.1016/0040-6090(76)90211-X Weimann, 1979, Thin Solid Films, 56, 173, 10.1016/0040-6090(79)90062-2 Varadarajan, 1979, Thin Solid Films, 56, 235, 10.1016/0040-6090(79)90068-3 Sawada, 1979, Thin Solid Films, 56, 183, 10.1016/0040-6090(79)90063-4 Sizt, 1979, Thin Solid Films, 56, 107, 10.1016/0040-6090(79)90056-7 Zeisse, 1977, J. Vacuum Sci. Technol., 14, 956, 10.1116/1.569399 Shimano, 1978, Solid State Electron., 21, 1149, 10.1016/0038-1101(78)90352-0 Arora, 1979, Thin Solid Films, 56, 153, 10.1016/0040-6090(79)90060-9 Chang, 1976, Appl. Phys. Letters, 29, 56, 10.1063/1.88872 Chesler, 1978, Appl. Phys. Letters, 32, 60, 10.1063/1.89841 Chesler, 1978, J. Vacuum Sci. Technol., 15, 1525, 10.1116/1.569781 Yamasaki, 1979, Appl. Phys. Letters, 35, 932, 10.1063/1.91010 Hirayama, 1981, J. Appl. Phys., 52, 4697, 10.1063/1.329353 Yokoyama, 1978, Appl. Phys. Letters, 32, 58, 10.1063/1.89839 Chang, 1978, Appl. Phys. Letters, 32, 332, 10.1063/1.90040 Koshiga, 1979, Thin Solid Films, 56, 39, 10.1016/0040-6090(79)90050-6 Narsale, 1986, Phys. Stat. Sol., 95a, 743, 10.1002/pssa.2210950245 Becke, 1965, Solid State Electron., 8, 813, 10.1016/0038-1101(65)90074-2 Becke, 1967, Electronics, 40, 82 Kern, 1979, RCA Rev., 31, 771 Foster, 1970, J. Electrochem. Soc., 117, 1410, 10.1149/1.2407333 Klose, 1974, Phys. Stat. Sol., 21a, 659, 10.1002/pssa.2210210231 Ito, 1974, Solid State Electron., 17, 759, 10.1016/0038-1101(74)90100-2 Lum, 1977, Appl. Phys. Letters, 31, 213, 10.1063/1.89610 Mimura, 1978, IEEE Trans. Electron Devices, ED-25, 573, 10.1109/T-ED.1978.19139 Yokoyama, 1979, Surface Sci., 86, 835, 10.1016/0039-6028(79)90465-5 Hirose, 1977, Phys. Stat. Sol., 42a, 483, 10.1002/pssa.2210420208 Hirose, 1978, Phys. Stat. Sol., 45a, K175, 10.1002/pssa.2210450263 Hirose, 1977, Phys. Stat. Sol., 42a, 483, 10.1002/pssa.2210420208 Yokoyama, 1979, Thin Solid Films, 56, 81, 10.1016/0040-6090(79)90054-3 Kamimura, 1979, Thin Solid Films, 56, 215, 10.1016/0040-6090(79)90066-X Streever, 1980, Solid State Electron., 23, 863, 10.1016/0038-1101(80)90103-3 Suzuki, 1978, Appl. Phys. Letters, 33, 761, 10.1063/1.90495 Bayraktaroĝlu, 1980, 207 Bagratishvili, 1976, Phys. Stat. Sol., 36a, 73, 10.1002/pssa.2210360107 Pande, 1981, Solid State Electron., 24, 1107, 10.1016/0038-1101(81)90177-5 Wager, 1982, J. Appl. Phys., 53, 5789, 10.1063/1.331416 Yamaguchi, 1980, J. Appl. Phys., 51, 5007, 10.1063/1.328380 Meiners, 1981, J. Vacuum Sci. Technol., 19, 373, 10.1116/1.571066 Yamaguchi, 1981, J. Appl. Phys., 52, 4885, 10.1063/1.329297 Wilmsen, 1975, CRC Crit. Rev. Solid State Sci., 5, 313, 10.1080/10408437508243489 Lile, 1976, Appl. Phys. Letters, 28, 554, 10.1063/1.88821 Pande, 1979, J. Vacuum Sci. Technol., 16, 1470, 10.1116/1.570224 Ota, 1979, Japan. J. Appl. Phys., 18, 989, 10.1143/JJAP.18.989 Hannah, 1980, 271 Hwang, 1986, J. Vacuum Sci. Technol., A4, 1018, 10.1116/1.573443 Kanazawa, 1981, Japan. J. Appl. Phys., 20, L211, 10.1143/JJAP.20.L211 Hirayama, 1982, J. Electron. Mater., 11, 1011, 10.1007/BF02658913 Hirayama, 1982, Appl. Phys. Letters, 40, 712, 10.1063/1.93244 Matsui, 1983, IEEE Electron Device Letters, EDL-4, 308, 10.1109/EDL.1983.25744 Fuyuki, 1983, Japan. J. Appl. Phys., 22, 1574, 10.1143/JJAP.22.1574 Bouchikhi, 1986, Semicond. Sci. Technol., 1, 143, 10.1088/0268-1242/1/2/009 Roberts, 1977, Electron. Letters, 13, 581, 10.1049/el:19770415 Sykes, 1980, 137 Roberts, 1978, Solid State Electron Devices, 2, 169, 10.1049/ij-ssed.1978.0053 Messick, 1976, J. Appl. Phys., 47, 4949, 10.1063/1.322500 Fritzsche, 1978, Electron. Letters, 14, 51, 10.1049/el:19780037 Stannard, 1979, J. Vacuum Sci. Technol., 16, 1462, 10.1116/1.570222 Meiners, 1979, Thin Solid Films, 56, 201, 10.1016/0040-6090(79)90064-6 Lile, 1978, Electron. Letters, 14, 657, 10.1049/el:19780441 Meiners, 1979, J. Vacuum Sci. Technol., 16, 1458, 10.1116/1.570221 Fritzsche, 1980, 258 von Klitzing, 1980, J. Appl. Phys., 51, 5893, 10.1063/1.327554 Meiners, 1979, Electron. Letters, 15, 578, 10.1049/el:19790415 Meiners, 1980, 198 Cameron, 1981 Valco, 1985, Vol. 86-3, 209 Kawakami, 1979, Electron. Letters, 15, 502, 10.1049/el:19790363 Okamura, 1980, Japan. J. Appl. Phys., 19, L599, 10.1143/JJAP.19.L599 Okamura, 1980, Japan. J. Appl. Phys., 19, 2151, 10.1143/JJAP.19.2151 Okamura, 1980, Japan. J. Appl. Phys., 19, 2143, 10.1143/JJAP.19.2143 Kobayashi, 1981, Japan Appl. Phys., 52, 6434, 10.1063/1.328593 Kobayashi, 1986, Appl. Phys. Letters, 49, 351, 10.1063/1.97612 Pande, 1981, IEEE Electron Device Letters, EDL-2, 182, 10.1109/EDL.1981.25391 Al-Refaie, 1981, 128, 207 Farrow, 1981, J. Vacuum Sci. Technol., 19, 415, 10.1116/1.571030 Sullivan, 1982, J. Crystal Growth, 60, 403, 10.1016/0022-0248(82)90118-X Tu, 1983, Appl. Phys. Letters, 43, 569, 10.1063/1.94428 Yamaguchi, 1980, Japan. J. Appl. Phys., 19, L401, 10.1143/JJAP.19.L401 Hirota, 1982, J. Appl. Phys., 53, 536, 10.1063/1.329914 Chave, 1986, 89 Chave, 1987, J. Appl. Phys., 61, 257, 10.1063/1.338867 Hirota, 1987, J. Appl. Phys., 61, 277, 10.1063/1.338817 Choujaa, 1986, J. Appl. Phys., 60, 2191, 10.1063/1.337177 Hasegawa, 1985, Vol. 86-3, 126 Hasegawa, 1983, Thin Solid Films, 103, 119, 10.1016/0040-6090(83)90430-3 Pande, 1985, Vol. 86-3, 165 Schachter, 1985, Appl. Phys. Letters, 47, 272, 10.1063/1.96188 Jeong, 1987, J. Appl. Phys., 62, 2370, 10.1063/1.339501 Robach, 1986, Appl. Phys. Letters, 49, 1281, 10.1063/1.97386 van Vechten, 1985, J. Appl. Phys., 57, 1956, 10.1063/1.334431 van Staa, 1983, J. Appl. Phys., 54, 4014, 10.1063/1.332582 Kulisch, 1987, J. Vacuum Sci. Technol., B5, 523, 10.1116/1.583943 Goodnick, 1984, Appl. Phys. Letters, 44, 453, 10.1063/1.94764 Wager, 1983, J. Vacuum Sci. Technol., B1, 778, 10.1116/1.582691 Liliental, 1985, Appl. Phys. Letters, 46, 889, 10.1063/1.95877 Bertness, 1986, J. Vacuum Sci. Technol., A4, 1424, 10.1116/1.573525 Brillson, 1982, Surface Sci. Rept., 2, 123, 10.1016/0167-5729(82)90001-2 Monch, 1985, Surface Sci., 168, 577, 10.1016/0039-6028(86)90889-7 Wieder, 1980, Inst. Phys. Conf. Ser. No. 50, 234 Waldrop, 1983, Appl. Phys. Letters, 42, 454, 10.1063/1.93968 Zhang, 1984, J. Appl. Phys., 55, 2896 Bartels, 1986, J. Vacuum Sci. Technol., B4, 1100, 10.1116/1.583539 Monch, 1984, 1 Eaton, 1962, J. Phys. Chem. Solids, 23, 1473, 10.1016/0022-3697(62)90202-0 Davis, 1964, Surface Sci., 2, 33, 10.1016/0039-6028(64)90040-8 Dewald, 1957, J. Electrochem. Soc., 104, 224, 10.1149/1.2428546 Mueller, 1964, J. Appl. Phys., 35, 1524, 10.1063/1.1713660 Chang, 1965, Appl. Phys. Letters, 7, 210, 10.1063/1.1754382 Huff, 1966, Surface Sci., 5, 399, 10.1016/0039-6028(66)90038-0 Chang, 1967, Solid State Electron., 10, 69, 10.1016/0038-1101(67)90115-3 Lile, 1969, Brit. J. Appl. Phys., 2, 839 Komatsubara, 1969, J. Appl. Phys., 40, 2940, 10.1063/1.1658105 Komatsubara, 1969, J. Vacuum Sci. Technol., 6, 572, 10.1116/1.1315686 Hung, 1970, J. Appl. Phys., 41, 2185, 10.1063/1.1659187 Korwin-Pawlowski, 1974, Phys. Stat. Sol., 24a, 6849 Henneke, 1965, J. Appl. Phys., 36, 2967, 10.1063/1.1714619 Kim, 1974, IEEE Trans. Parts, Hybrids, Packaging PHP-10, 200, 10.1109/TPHP.1974.1134859 Etchels, 1976, J. Appl. Phys., 47, 4605, 10.1063/1.322386 Fufiyasu, 1977, Japan. J. Appl. Phys., 16, 1473, 10.1143/JJAP.16.1473 Nakagawa, 1977, Appl. Phys. Letters, 31, 348, 10.1063/1.89695 Heime, 1977, Appl. Phys., 15, 79, 10.1007/BF00896894 Langan, 1974, J. Vacuum Sci. Technol., 16, 1474, 10.1116/1.570225 Fujisada, 1983, Japan. J. Appl. Phys., 22, L525, 10.1143/JJAP.22.L525 Fujisada, 1984, Japan. J. Appl. Phys., 23, L46, 10.1143/JJAP.23.L46 Fujisada, 1985, Japan. J. Appl. Phys., 24, L835, 10.1143/JJAP.24.L835 Lile, 1983, 22, 389 Wei, 1980, IEEE Trans. Electron Devices, ED-27, 170 Kawaji, 1966, 21, 336 Kunig, 1968, Solid State Electron., 10, 335, 10.1016/0038-1101(68)90045-2 Schwartz, 1971, Solid State Electron., 14, 115, 10.1016/0038-1101(71)90086-4 Terao, 1974, Electr. Eng. Japan, 94, 127, 10.1002/eej.4390940217 Wilmsen, 1977, Thin Solid Films, 46, 331, 10.1016/0040-6090(77)90190-0 Baglee, 1980, J. Vacuum Sci. Technol., 17, 1032, 10.1116/1.570585 Shirokov, 1984, Inorg. Mater., 20, 931 Nicollian, 1967, Bell Syst. Tech. J., 46, 1055, 10.1002/j.1538-7305.1967.tb01727.x Shirokov, 1985, Inorg. Mater., 21, 155 Spitzer, 1973, J. Electrochem. Soc., 120, 699, 10.1149/1.2403530 Ikoma, 1976, IEEE Trans. Electron Devices, ED-23, 521, 10.1109/T-ED.1976.18441 Hasegawa, 1978, J. Appl. Phys., 49, 4459, 10.1063/1.325449 Wieder, 1981, Appl. Phys. Letters, 38, 170, 10.1063/1.92273 Wieder, 1981, IEEE Election Device Letters, EDL-2, 73, 10.1109/EDL.1981.25345 Gardner, 1981, RCA Rev., 42, 542 Wieder, 1983, Appl. Phys. Letters, 43, 287, 10.1063/1.94329 Mullin, 1983, J. Vacuum Sci. Technol., B1, 782, 10.1116/1.582692 Tell, 1980, Appl. Phys. Letters, 39, 744, 10.1063/1.92877 Selders, 1987, 81 Taillepied, 1986, 85 Ota, 1987, J. Appl. Phys., 61, 404, 10.1063/1.338838 Selders, 1986, IEEE Electron Device Letters, EDL-7, 434, 10.1109/EDL.1986.26427 Phillips, 1973, J. Electrochem. Soc., 120, 1087, 10.1149/1.2403635 Forbes, 1974, Solid State Electron., 17, 25, 10.1016/0038-1101(74)90109-9 Ahrenkiel, 1979, Thin Solid Films, 56, 117, 10.1016/0040-6090(79)90057-9 Spicer, 1982, J. Vacuum Sci. Technol., A1, 149, 10.1116/1.571699 Rhiger, 1982, J. Vacuum Sci. Technol., 21, 168, 10.1116/1.571705 Bertagnolli, 1986, Thin Solid Films, 135, 267, 10.1016/0040-6090(86)90134-3 Nemirovsky, 1984, Appl. Phys. Letters, 44, 443, 10.1063/1.94760 Nemirovsky, 1985, J. Appl. Phys., 58, 366, 10.1063/1.335686 Nemirovsky, 1986, J. Vacuum Sci. Technol., A4, 1986, 10.1116/1.574013 Antonov, 1985, Inorg. Mater., 21, 331 Antonov, 1980, Mikroelektronika, 9, 274 Antonov, 1982, Mikroelektronika, 11, 70 Sakashita, 1982, J. Electrochem. Soc., 129, 1710, 10.1149/1.2124255 Kolodny, 1980, IEEE Trans. Electron Devices, ED-27, 37, 10.1109/T-ED.1980.19816 Sood, 1980, IEEE Electron Device Letters, EDL-1, 12, 10.1109/EDL.1980.25209 Nemirovsky, 1979, Solid State Electron., 22, 831, 10.1016/0038-1101(79)90049-2 Sun, 1980, J. Vacuum Sci. Technol., 17, 1067, 10.1116/1.570592 Nemirovsky, 1980, Appl. Phys. Letters, 37, 813, 10.1063/1.92090 Nemirovsky, 1982, J. Appl. Phys., 53, 4888, 10.1063/1.331321 Schoolar, 1982, J. Vacuum Sci. Technol., 21, 164, 10.1116/1.571704 Miksic, 1964, Solid State Electron., 7, 39, 10.1016/0038-1101(64)90120-0 Wilson, 1965, J. Electrochem. Soc., 112, 85, 10.1149/1.2423474 Deka, 1984, Thin Solid Films, 112, L5, 10.1016/0040-6090(84)90508-X Deka, 1984, Indian J. Pure Appl. Phys., 22, 63 Saraie, 1986, Solid State Electron., 29, 994, 10.1016/0038-1101(86)90026-2 Koelmans, 1967, Solid State Electron., 10, 997, 10.1016/0038-1101(67)90149-9 Erskine, 1978, J. Vacuum Sci. Technol., 15, 1823, 10.1116/1.569850 Brillson, 1981, J. Appl. Phys., 52, 5250, 10.1063/1.329430 Monch, 1988, Phys. Rev., 37, 7129, 10.1103/PhysRevB.37.7129