Semi-Conductors with Mobile Ions Show a New Type of I-V Relations

Semi-conductors with mobile acceptors or donors show a new type of I-V relations. This paper presents experimental results for solid state devices based on copper oxide, found to be Cu2O, which exhibit these I-V relations. The cells examined are Cu| Cu2O| In and Cu| Cu2O| Ag and similar ones tested at room temperature. The measured I-V relations are different from those reported for the same type of cells in the past, which were explained to be fixed by a Schottky barrier Cu| Cu2O. We find that the I-V relations relax over a long time which we claim is due to ion redistribution. The new I-V relations can then be explained by assuming that Cu2O is a mixed-ionic-electronic-conductor and adopting a theory developed by us in the past and modified to be applicable to the relevant defect model here. In this case the contribution of Schottky barriers is insignificant.