Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer

IEEE Transactions on Electron Devices - Tập 35 Số 1 - Trang 2-7 - 1988
Koichi Nagata1, O. Nakajima1, Takahira Yamauchi1, T. Nittono1, Hiroshi Itô1, T. Ishibashi1
1Electr. Commun. Labs., NTT, Kanagawa, Japan

Tóm tắt

Từ khóa


Tài liệu tham khảo

rao, 1987, an (al,ga)as/gaas heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter, IEEE Electron Device Letters, 8, 30, 10.1109/EDL.1987.26540

10.1143/JJAP.24.1368

10.1049/el:19860012

yamauchi, 1986, electron velocity overshoot in the collector depletion layer of algaas/gaas hbt's, IEEE Electron Device Letters, 7, 655, 10.1109/EDL.1986.26509

10.1016/0038-1101(70)90056-0

nagata, 1986, A new self-aligned structure AlGaAs/GaAs HBT for high speed digital circuits, Inst Phys Conf Ser, 79, 589

chang, 1986, gaas/(gaal)as heterojunction bipolar transistors using a self-aligned substitutional emitter process, IEEE Electron Device Letters, 7, 8, 10.1109/EDL.1986.26274

10.1049/el:19860803

nakajima, 1986, high-speed algaas/gaas hbts with proton-implanted buried layers, 1986 International Electron Devices Meeting, 266, 10.1109/IEDM.1986.191166

10.1116/1.571074

ishibashi, 1986, self-aligned algaas/gaas heterojunction bipolar transistors for high-speed digital circuits, 1986 International Electron Devices Meeting, 809, 10.1109/IEDM.1986.191320

asbeck, 1982, numerical simulation of gaas/gaalas heterojunction bipolar transistors, IEEE Electron Device Letters, 3, 403, 10.1109/EDL.1982.25615

10.1109/PROC.1982.12226

10.1143/JJAP.25.L865