Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Zantye P B, Kumar A, Sikder A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep45(3–6): 89–220 (2004)

DeJulie R. CMP grows in sophistication. Semiconductor International21(13): 56–80 (1998)

Oliver M R. Chemical-Mechanical Planarization of Semiconductor Materials. Berlin (Germany): Springer, 2004.

Fury M A. The early days of CMP. Solid State Technol40: 81 (1997)

Steigerwald J M, Murarka S P, Gutmann R J. Chemical Mechanical Planarization of Microelectronic Materials. New York (USA): John Wiley & Sons, 1997.

Ali I, Roy S R, Shinn G. Chemical mechanical polishing of interlayer dielectric: A review. Solid State Technol10: 63–70 (1994)

Li Y. Microelectronic Applications of Chemical Mechanical Planarization. New Jersey (USA): John Wiley Sons, 2007.

Liang H, Kaufman F, Sevilla R, Anjur S. Wear phenomena in chemical mechanical polishing. Wear211(2): 271–279 (1997)

Palla B J, Shah D O. Correlation of observed stability and polishing performance to abrasive particle size for CMP. In Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, 1999: 362–369.

Luo J, Dornfeld D A. Effects of abrasive size distribution in chemical mechanical planarization: Modeling and verification. IEEE T Semiconduct M16(3): 469–476 (2003)

Gokhale K S, Moudgil B M. Particle technology in chemical mechanical planarization. KONA25: 88–96 (2007)

Zhao B, Shi F G. Chemical mechanical polishing: Threshold pressure and mechanism. Electrochem Solid-State Lett2(3): 145–147 (1999)

Basim G B, Adler J J, Mahajan U, Singh R K, Moudgil B M. Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects. J Electrochem Soc147(9): 3523–3528 (2000)

Inaba S, Katsuyama T, Tanaka M. Study of CMP polishing pad control method. In 1998 Proceedings of the Third International Chemical-Mechanical Planarization for VLSI Multilevel Interconnection Conference (CMP-MIC), 1998: 44–51.

Jairath R, Desai M, Stell M, Telles R, Scherber-Brewer D. Consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors. In Materials Research Society Symposium — Proceedings, 1994: 121–131.

Yamada Y, Kawakubo M, Hirai O, Konishi N, Kurokawa S, Doi T. Frictional characterization of chemical-mechanical polishing pad surface and diamond conditioner wear. Jpn J Appl Phys Part 147(8): 6282–6287 (2008)

Preston F W. The theory and design of plate lass polishing machines. J Soc Glass Tech11: 214–256 (1927)

Luo Q, Ramarajan S, Babu S V. Modification of the Preston equation for the chemical mechanical polishing of copper. Thin Solid Films335(1–2): 160–167 (1998)

Cook L M. Chemical processes in glass polishing. J Noncryst Solids120: 152–171 (1990)

Liu C W, Dai B T, Tseng W T, Yeh C F. Modeling of the wear mechanism during chemical-mechanical polishing. Journal of the Electrochemical Society143(2): 716–721 (1996)

Runnels S R. Feature-scale fluid-based erosion modeling for chemical mechanical polishing. J Electrochem Soc141(7): 1900–1904 (1994)

Tseng W T, Wang T L. Re-examination of pressure and speed dependence of removal rate during chemical mechanical polishing processes. J Electrochem Soc144(2): L15–L17 (1997)

Zhang F, Busnaina A A, Ahmadi G. Particle adhesion and removal in chemical mechanical polishing and post-CMP cleaning. J Electrochem Soc146(7): 2665–2669 (1999)

Ahmadi G, Xia X. A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process. J Electrochem Soc148(3): G99–G109 (2001)

Park K H, Kim H J, Chang O M, Jeong H D. Effects of pad properties on material removal in chemical mechanical polishing. J Mater Process Tech187–188: 73–76 (2007)

Yu T K, Yu C C, Orlowski M. Statistical polishing pad model for chemical-mechanical polishing. In Electron Devices Meeting 1993. IEDM’93. Technical Digest, International. IEEE, 1993: 865–868.

Zhao B, Shi F G. Chemical mechanical polishing in IC processes: New fundamental insights. In Proceedings of the Fourth International Chemical Mechanical Planarization for ULSI Multilevel Interconnection Conference, 1999: 12–22.

Luo J, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: theory and modeling. IEEE T Semiconduct M14(2): 112–133 (2001)

Ring T A, Feeney P, Boldridge D, Kasthurirangan J, Li S, Dirksen J A. Brittle and ductile fracture mechanics analysis of surface damage caused during CMP. J Electrochem Soc154(3): H239–H248 (2007)

Seo Y J, Kim S Y, Lee W S. Reduction of process defects using a modified set-up for chemical mechanical polishing equipment. Microelectron Eng65(4): 371–379 (2003)

Lee S I, Hwang J, Kim, Jeong H. Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries. Microelectron Eng84(4): 626–630 (2007)

Yamada Y, Konishi N, Noguchi J, Jimbo T. Influence of CMP slurries and post-CMP cleaning solutions on Cu interconnects and TDDB reliability. J Electrochem Soc155(7): H485–H490 (2008)

Krishnan M, Nalaskowski J W, Cook L M. Chemical mechanical planarization: Slurry chemistry, materials, and mechanisms. Chem Rev110(1): 178–204 (2010)

Jung S M, Uom J S, Cho W S, Bae Y J, Chung Y K, Yu K S, Kim K Y, Kim K. A study of formation and failure mechanism of CMP scratch induced defects on ILD in a W-damascene interconnect SRAM cell. In Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International. IEEE, 2001: 42–47.

Kim H J, Yang J C, Yoon B U, Lee H D, Kim T. Nanoscale stick-slip friction model for the chatter scratch generated by chemical mechanical polishing process. J Nanosci Nanotech12(7): 5683–5686 (2012)

International technology roadmap for semiconductors, http://www.itrs.net/, 2010.

Ding P, Starr G W, Chowdhury P, Hirleman E D. Defect characterization and light scattering by PSL spheres on tungsten CMP wafers. In Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, Austin, USA, 1997: 50–60.

McGarvey S, Miller A E. Surface scanning inspection system defect classification of CMP induced scratches. In Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, San Jose, California, USA, 2011: 79712P1–8.

Abbadie A, Cresente F, Séméria M N. Advanced wet cleaning post-CMP. Application to reclaim wafers. J Electrochem Soc151(1): G57–G66 (2004)

Kim S Y, Park S W, Seo Y J. Improvements of CMP characteristics using slurry filter and high-spray bar of deionized water. J Mater Sci-Mater El13(12): 693–696 (2002)

Kasai T, Dowell C, Somanchi A. Application of a laser assisted defect detection system for chemical mechanical planarization slurry development in rigid disk polishing. Meas Sci Technol18(5): 1582–1590 (2007)

Stokowski S, Vaez-Iravani M. Wafer inspection technology challenges for ULSI manufacturing. In AIP Conference Proceedings, Gaithersburg, Maryland, USA, 1998: 405.

Seo Y J, Kim S Y, Lee W S. Advantages of point of use (POU) slurry filter and high spray method for reduction of CMP process defects. Microelectron Eng70: 1–6 (2003)

Teo T Y, Goh W L, Leong L S, Lim V S K, Tse T Y, Chan L. Characterization and reduction of copper chemical mechanical polishing induced scratches. In Proc. SPIE 5041, Process and Materials Characterization and Diagnostics in IC Manufacturing, Santa Clara, CA, USA, 2003: 61–69.

Ahn Y, Yoon J Y, Baek C W, Kim Y K. Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction. Wear257(7–8): 785–789 (2004)

Kim D H, Kang H G, Kim S K, Paik U, Park J G. Agglomerated large particles under various slurry preparation conditions and their influence on shallow trench isolation chemical mechanical polishing. Jpn J Appl Phys Part 144(11): 7770–7776 (2005)

Remsen E E, Anjur S, Boldridge D, Kamiti M, Li S, Johns T, Dowell C, Kasthurirangan J, Feeney P. Analysis of large particle count in fumed silica slurries and Its Correlation with scratch defects generated by CMP. J Electrochem Soc153(5): G453–G461 (2006)

Coutinho C A, Mudhivarthi S R, Kumar A, Gupta V K. Novel ceria-polymer microcomposites for chemical mechanical polishing. Appl Surf Sci255(5 Part 2): 3090–3096 (2008)

Jindal A, Hegde S, Babu S V. Chemical mechanical polishing using mixed abrasive slurries. Electrochem Solid-State Lett5(7): G48–G50 (2002)

Wrschka P, Hernandez J, Oehrlein G S, Negrych J A, Haag G, Rau P, Currie J E. Development of a slurry employing a unique silica abrasive for the CMP of Cu damascene structures. J Electrochem Soc148(6): G321–G325 (2001)

Lei H, Zhang P. Preparation of alumina/silica core-shell abrasives and their CMP behavior. Appl Surf Sci253(21): 8754–8761 (2007)

Armini S, Whelan C M, Maex K, Hernandez J L, Moinpour M. Composite polymer-core silica-shell abrasive particles during oxide CMP: A defectivity study. J Electrochem Soc154(8): H667–H671 (2007)

Armini S, Burtovyy R, Moinpour M, Luzinov I, De Messemaeker J, Whelan C M, Maex K. Interaction forces between a glass surface and ceria modified PMMA based abrasives for CMP measured by colloidal probe AFM. J Electrochem Soc155(4): H218–H223 (2008)

Armini S, Whelan C M, Moinpour M, Maex K. Composite polymer core-silica shell abrasives: The effect of the shape of the silica particles on oxide CMP. J Electrochem Soc155(6): H401–H406 (2008)

Chang F C, Tanawade S, Singh R K. Effects of stress-induced particle agglomeration on defectivity during CMP of low-k dielectrics. J Electrochem Soc156(1): H39–H42 (2009)

Yi C, Tsai C F, Wang J F. Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by adjustment of pH of deionized water. U.S. Patent 6 130 163, Oct. 2000.

Chang F C, Singh R K. Method for quantifying the degree of agglomeration in highly stable chemical mechanical polishing slurries. Electrochem Solid-State Lett12(4): H127–H130 (2009)

Donis R, Fisher M, Bauck L. Effect of slurry distribution using diaphragm and centrifugal pupms on the defectivity in a Cu CMP process. ECS Trans25(38): 47–54 (2010)

Hooper B J, Byrne G, Galligan S. Pad conditioning in chemical mechanical polishing. J Mater Process Tech123(1): 107–113 (2002)

Landis H, Burke P, Cote W, Hill W, Hoffman C, Kaanta C, Koburger C, Lange W, Leach M, Luce S. Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing. Thin Solid Films220(1–2): 1–7 (1992)

Lee W J, Park H S, Shin H C. Enhancement of CMP pad lifetime for shallow trench isolation process using profile simulation. Curr Appl Phys9(1): S134–S137 (2009)

Choi J G, Prasad Y N, Kim I K, Kim W J, Park J G. The synergetic role of pores and grooves of the pad on the scratch formation during STI CMP. J Electrochem Soc157(8): H806–H809 (2010)

Wang Y C, Yang T S. Effects of pad grooves on chemical mechanical planarization. J Electrochem Soc154(6): H486–H494 (2007)

Thakurta D G, Borst C L, Schwendeman D W, Gutmann R J, Gill W N. Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: Modeling and experiments. Thin Solid Films366(1–2): 181–190 (2000)

Rosales-Yeomans D, Doi T, Kinoshita M, Suzuki T, Philipossian A. Effect of pad groove designs on the frictional and removal rate characteristics of ILD CMP. J Electrochem Soc152(1): G62–G67 (2005)

Hsien Y H, Hsu H K, Tsai T C, Lin W, Huang R P, Chen C H, Yang C L, Wu J Y. Process development of high-k metal gate aluminum CMP at 28 nm technology node. Microelectron Eng92: 19–23 (2012)

Choi J G, Prasad Y N, Kim I K, Kim I G, Kim W J, Busnaina A A, Park J G. Analysis of scratches formed on oxide surface during chemical mechanical planarization. J Electrochem Soc157(2): H186–H191 (2010)

Eusner T, Saka N, Chun J H. Breaking-in a pad for scratch-free, Cu chemical-mechanical polishing. J Electrochem Soc158(4): H379–H389 (2011)

Tsai M Y, Chen W K. Effect of CMP conditioner diamond shape on pad topography and oxide wafer performances. Int J Adv Manuf Tech55(1–4): 253–262 (2011)

Yang J C, Choi J H, Hwang, Lee C G, Kim T. Effects of diamond size of CMP conditioner on wafer removal rates and defects for solid (non-porous) CMP pad with micro-holes. Int J Mach Tool Manu50(10): 860–868 (2010)

Yang J C, Kim H, Lee C G, Lee H D, Kim T. Optimization of CMP pad surface by laser induced micro hole. J Electrochem Soc158(1): H15–H20 (2011)

Prasad Y N, Kwon T Y, Kim I K, Kim I G, Park J G. Generation of Pad debris during oxide CMP process and Its role in scratch formation. J Electrochem Soc158(4): H394–H400 (2011)

Kwon T Y, Cho B J, Ramachandran M, Busnaina A A, Park J G. Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization. Tribol Lett50(2): 169–175 (2013)

Yang J C, Oh D W, Kim H J, Kim T. Investigation on surface hardening of polyurethane pads during chemical mechanical polishing (CMP). J Electron Mater39(3): 338–346 (2010)

Lin M, Chang C Y, Liao D C, Wang B, Henderson A. Improved STI CMP technology for micro-scratch issue. In Proceedings of Chemical Mechanical Polishing-Multilevel Interconnection Conference, Santa Clara, 1999: 322.

Huang J, Chen H C, Wu J Y, Lur W. Investigation of CMP micro-scratch in the fabrication of sub-quarter micron VLSI circuit. In Proceedings of Chemical Mechanical Polishing-Multilevel Interconnection Conference, Santa Clara, 1999: 77–79.

Benner S J, Perez G, Peters D W, Hue K, O’Hagan P. Reduction of CMP-induced wafer defects through in-situ removal of process debris. In Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI. IEEE, 2011: 1–4.

Suratwala T, Wong L, Miller P, Feit M D, Menapace J, Steele R, Davis P, Walmer D. Sub-surface mechanical damage distributions during grinding of fused silica. J Non-cryst Solids352(52–54): 5601–5617 (2006)

Lawn B. Fracture of Brittle Solids. New York (USA): Cambridge university press, 1993.

Hutchings I M. Tribology: Friction and Wear of Engineering Materials. London (UK): Butterworth-Heinemann Ltd., 1992.

Suratwala T, Steele R, Feit M D, Wong L, Miller P, Menapace J, Davis P. Effect of rogue particles on the sub-surface damage of fused silica during grinding/polishing. J Non-cryst Solids354(18): 2023–2037 (2008)

Greenwood J A. The area of contact between rough surfaces and flats. J Lubr Technol Trans ASME89: 81 (1967)

Greenwood J A, Williamson J B P. Contact of nominally flat surfaces. Proc R Soc Lond A295(1442): 300–319 (1966)

Saka N, Eusner T, Chun J H. Nano-scale scratching in chemical-mechanical polishing. CIRP Ann Manuf Technol57(1): 341–344 (2008)

Johnson K L. Contact Mechanics. New York (USA): Cambridge university press, 1987.

Suh N P. Tribophysics. New Jersey (USA): Prentice-Hall, Englewood Cliffs, 1986.

Maugis D, Pollock H M. Surface forces, deformation and adherence at metal microcontacts. ACTA Metall32(9): 1323–1334 (1984)

Saka N, Eusner T, Chun J H. Scratching by pad asperities in chemical-mechanical polishing. CIRP Ann Manuf Technol59(1): 329–332 (2010)

Chandra A, Karra P, Bastawros A F, Biswas R, Sherman P J, Armini S, Lucca D A. Prediction of scratch generation in chemical mechanical planarization. CIRP Ann Manuf Technol57(1): 559–562 (2008)

Ball R C, Weitz D A, Witten T A, Leyvraz F. Universal kinetics in reaction-limited aggregation. Phys Rev Lett58(3): 274–277 (1987)

Che W, Guo Y, Chandra A, Bastawros A. A scratch intersection model of material removal during chemical mechanical planarization (CMP). J Manuf Sci Eng127(3): 545–554 (2005)

Gao C, Kuhlmann-Wilsdorf D, Makel D D. Fundamentals of stick-slip. Wear162–164(PART B): 1139–1149 (1993)

Gao C, Kuhlmann-Wilsdorf D, Makel D D. The dynamic analysis of stick-slip motion. Wear173(1–2): 1–12 (1994)

Zhang S L, Li J C M. Slip process of stick-slip motion in the scratching of a polymer. Mater Sci Eng A344(1–2): 182–189 (2003)

Kim H J, Yang J C, Yoon B U, Lee H D, Kim T. Nano-scale stick-slip friction model for the chatter scratch generated by chemical mechanical polishing process. J Nanosci Nanotech12(7): 5683–5686 (2012)