Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties

Springer Science and Business Media LLC - Tập 469 - Trang 119-124 - 1997
F. González1, M. McQueen1, R. Barbour1, G. A. Rozgonyi2
1Micron Technology, Inc., Boise
2Materials Science and Engineering Dept., North Carolina State University, Raleigh

Tóm tắt

Thermal cycles in advanced CMOS processing can nucleate an annular ring of oxygen precipitate-induced stacking faults (OSF-ring) via activation of bulk nuclei grown-in during the crystal pulling process. Because the OSF-ring can adversely affect device characteristics, it is important that substrates with OSF-ring characteristics be detected early in the process. Results are presented in this paper from a typical DRAM device which show that the ring can act either in a beneficial gettering mode or as a device-degrading zone, depending on the depth distribution of the OSF-ring defects and the background iron impurity concentration.

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Springer Science and Business Media LLC

Tập 469

119-124

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