Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

Matter - Tập 2 Số 6 - Trang 1582-1593 - 2020
Xiaofei Fan1, Guodong Wei1, Xiaoyang Lin2,1, Xinhe Wang1, Zhizhong Si1, Xueying Zhang2,1, Qiming Shao3, S. Mangin4, Eric E. Fullerton5, Lei Jiang6, Weisheng Zhao2,1
1Fert Beijing Research Institute, School of Microelectronics & Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), Beihang University, Beijing 100191, China
2Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
3Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
4Institut Jean Lamour, UMR 7198, CNRS–Université de Lorraine, 54000 Nancy, France
5Center for Memory and Recording Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0401, USA
6School of Chemistry, Beihang University, Beijing 100191, China

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Matter

Tập 2 Số 6

1582-1593

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