Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method
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This article was mistakenly published twice. For this reason this duplicate article has now been retracted. For citation purposes please cite the original:
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Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl2·4H2O) and antimony(III) chloride (SbCl3) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10−3 ΩΩ cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.
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