Resistive switching in epitaxial BaTiO3 films grown on Nb-doped SrTiO3 by PLD

Ruikun Pan1,2, Yunbin He1, Mingkai Li1, Pai Li1, Panke Liu1, Zhengcai Xia2
1School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China
2Wuhan National High Magnetic Field Center, Huazhong University of Science & Technology, Wuhan 430074, PR China

Tài liệu tham khảo

Waser, 2009, Adv. Mater., 21, 2632, 10.1002/adma.200900375 Yan, 2010, Appl. Phys. Lett., 97, 112101, 10.1063/1.3488810 Chen, 2011, Appl. Phys. Lett., 98, 122102, 10.1063/1.3569586 Sawa, 2008, Mater. Today, 11, 28, 10.1016/S1369-7021(08)70119-6 Ghenzi, 2012, Physica B, 407, 3096, 10.1016/j.physb.2011.12.034 Fujii, 2005, Appl. Phys. Lett., 86, 012107, 10.1063/1.1845598 Ni, 2007, Appl. Phys. Lett., 91, 183502, 10.1063/1.2803317 Vijatović, 2008, Sci. Sinter., 40, 155, 10.2298/SOS0802155V Cui, 2005, Appl. Phys. Lett., 86, 203501, 10.1063/1.1927715 Sun, 2004, Appl. Phys. Lett., 87, 3298, 10.1063/1.1728300 Fang, 2007, Physica C, 458, 51, 10.1016/j.physc.2007.03.398 Yang, 2008, Appl. Phys. Lett., 92, 102113, 10.1063/1.2896302 Gonzalo, 1998, Appl. Phys. A, 66, 487, 10.1007/s003390050701 Zhang, 2008, Mater. Chem. Phys., 107, 215, 10.1016/j.matchemphys.2007.07.001 Mi, 2005, J. Cryst. Growth, 283, 425, 10.1016/j.jcrysgro.2005.06.032 Gan, 1998, Mater. Sci. Eng. B, 56, 204, 10.1016/S0921-5107(98)00246-3 Shen, 2008, Appl. Phys. Lett., 93, 222102, 10.1063/1.3039809 Shen, 2010, J. Appl. Phys., 107, 094506, 10.1063/1.3369285 Park, 2007, J. Korean Phys. Soc., 50, 1294, 10.3938/jkps.50.1294 Sun, 2012, Appl. Phys. Lett., 101, 133506, 10.1063/1.4755842 Sze, 2007 Fowler, 1928, Proc. R. Soc. A, 119, 173 Chen, 2012, Phys. Rev. B, 86, 094105, 10.1103/PhysRevB.86.094105 Goronkin, 1967, J. Appl. Phys., 38, 4547, 10.1063/1.1709174 Geprägs, 2012, Phys. Rev. B, 86, 134432, 10.1103/PhysRevB.86.134432 Geprägs, 2013, Phys. Rev. B, 88, 054412, 10.1103/PhysRevB.88.054412 Peng, 2010, Appl. Phys. Lett., 96, 192113, 10.1063/1.3428365 Sawa, 2004, Appl. Phys. Lett., 85, 4073, 10.1063/1.1812580 Chen, 2010, Appl. Phys. A, 100, 987, 10.1007/s00339-010-5910-y Uedono, 2002, J. Appl. Phys., 91, 5307, 10.1063/1.1462852 Yang, 2009, Nanotechnology, 20, 055709, 10.1088/0957-4484/20/5/055709