Resistive switching behavior in copper doped zinc oxide (ZnO:Cu) thin films studied by using scanning probe microscopy techniques

Journal of Alloys and Compounds - Tập 709 - Trang 535-541 - 2017
Juanxiu Xiao1, Tun Seng Herng2, Jun Ding2, Kaiyang Zeng1
1Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, 117576, Singapore
2Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117576, Singapore

Tóm tắt

Từ khóa


Tài liệu tham khảo

Jeong, 2012, Emerging memories: resistive switching mechanisms and current status, Rep. Prog. Phys. Phys. Soc., 75, 76502, 10.1088/0034-4885/75/7/076502

Scott, 2007, Applications of modern ferroelectrics, Science, 315, 954, 10.1126/science.1129564

Yang, 2009, Fully room temperature fabricated nonvolatile resistive memory for ultrafast and high-density memory application, Nano. Lett., 9, 1636, 10.1021/nl900006g

Chang, 2008, Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications, Appl. Phys. Lett., 92, 022110, 10.1063/1.2834852

Zhao, 2004, Piezoelectric characterization of individual zinc oxide nanobelt probed by piezoresponse force microscope, Nano. Lett., 4, 587, 10.1021/nl035198a

Wang, 2006, Piezoelectric nanogenerators based on zinc oxide nanowire arrays, Science, 312, 242, 10.1126/science.1124005

Joseph, 1999, Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition, Appl. Phys. Lett., 74, 2534, 10.1063/1.123889

Herng, 2010, Room temperature ferromagnetism of Cu-doped ZnO films probed by soft X-ray magnetic circular dichroism, Phys. Rev. Lett., 105, 207201, 10.1103/PhysRevLett.105.207201

Shinde, 2011, High-performance UV detector based on Ga-doped zinc oxide thin films, Appl. Surf. Sci., 257, 9595, 10.1016/j.apsusc.2011.06.073

Shinde, 2012, N-doped ZnO based fast response ultraviolet photoconductive detector, Solid-State Electron., 68, 22, 10.1016/j.sse.2011.10.031

Shinde, 2012, Fabrication and performance of N-doped ZnO UV photoconductive detector, J. Alloys Compd., 522, 118, 10.1016/j.jallcom.2012.01.118

Shinde, 2012, Size dependent electron–phonon coupling in N, Li, In, Ga, F and Ag doped ZnO thin films, Spectrosc. Acta Part A Mol. Biomol. Spectrosc., 98, 453, 10.1016/j.saa.2012.08.076

Shinde, 2013, Photoelectrochemical properties of highly mobilized Li-doped ZnO thin films, J. Photochem. Photobiol. B Biol., 120, 1, 10.1016/j.jphotobiol.2013.01.003

Shinde, 2013, Influence of tin doping onto structural, morphological, optoelectronic and impedance properties of sprayed ZnO thin films, J. Alloys Compd., 551, 688, 10.1016/j.jallcom.2012.11.057

Özgür, 2005, A comprehensive review of ZnO materials and devices, J. Appl. Phys., 98, 041301, 10.1063/1.1992666

Qi, 2013, Multimode resistive switching in single ZnO nanoisland system, Sci. Rep., 3, 2405, 10.1038/srep02405

Herng, 2012, Investigation of the non-volatile resistance change in noncentrosymmetric compounds, Sci. Rep., 2, 587, 10.1038/srep00587

Xiao, 2015, Resistive switching and polarization reversal of hydrothermal-method-grown undoped zinc oxide nanorods by using scanning probe microscopy techniques, ACS Appl. Mater. & Inter., 7, 11412, 10.1021/acsami.5b01988

Xiao, 2015, Correlation of the resistive switching and polarization switching in zinc oxide thin films using scanning probe microscopy techniques, J. Mater. Res., 30, 3431, 10.1557/jmr.2015.310

Xu, 2011, Bipolar and unipolar resistive switching in Zn0.98Cu0.02O films, J. Phys. D. Appl. Phys., 44, 335104, 10.1088/0022-3727/44/33/335104

Xu, 2014, Bipolar and unipolar resistive switching modes in Pt/Zn0. 99Zr0. 01O/Pt structure for multi-bit resistance random access memory, Appl. Phys. Lett., 104, 183501, 10.1063/1.4875383

Chen, 2008, Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications, Appl. Phys. Lett., 93, 093501, 10.1063/1.2978158

Tang, 2011, Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications, Solid-State Electron., 63, 100, 10.1016/j.sse.2011.05.023

Furukawa, 2008, Electron trap level of Cu-doped ZnO, Jpn. J. Appl. Phys., 47, 8799, 10.1143/JJAP.47.8799

Hartmann, 1996, Surf. Interface Anal., 24, 671, 10.1002/(SICI)1096-9918(19960916)24:9<671::AID-SIA165>3.0.CO;2-D

Herng, 2011, Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO, Adv. Mater., 23, 1635, 10.1002/adma.201004519

Xiao, 2017, Polarization rotation in copper doped zinc oxide (ZnO: Cu) thin films studied by Piezoresponse Force Microscopy (PFM) techniques, Acta Mater, 123, 394, 10.1016/j.actamat.2016.10.051

Gruverman, 2009, Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale, Nano. Lett., 9, 3539, 10.1021/nl901754t

Garcia, 2009, Giant tunnel electroresistance for non-destructive readout of ferroelectric states, Nature, 460, 81, 10.1038/nature08128

Kumar, 2012, Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film, ACS Appl. Mater. & Inter., 4, 5276, 10.1021/am301220h

Chen, 2014, Mechanisms of electromechanical coupling in strain based scanning probe microscopy, Appl. Phys. Lett., 104, 242907, 10.1063/1.4884422

Xia, 2007, Field-induced resistive switching based on space-charge-limited current, Appl. Phys. Lett., 90, 022907, 10.1063/1.2430912

Sze, 2006

Yang, 2015, Humidity effect on nanoscale electrochemistry in solid silver ion conductors and the dual nature of its locality, Nano. Lett., 15, 1062, 10.1021/nl5040286

Jeangros, 2013, Reduction of nickel oxide particles by hydrogen studied in an environmental TEM, J. Mater. Sci., 48, 2893, 10.1007/s10853-012-7001-2

Goux, 2010, Evidences of oxygen-mediated resistive-switching mechanism in TiN∖HfO2∖Pt cells, Appl. Phys. Lett., 97, 243509, 10.1063/1.3527086

Huang, 2013, Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory, J. Mater. Chem. C, 1, 7593, 10.1039/c3tc31542h