Research on VO x uncooled infrared bolometer based on porous silicon
Tóm tắt
In this paper, vanadium oxide thin film of TCR of −3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VO
x
has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V2O3, V3O5 and VO2.VO
x
microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8–14 μm, has maximum detectivity of 1.09×109 cm·Hz1/2/W at 24 Hz frequency and 9.8 μA bias current.
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