Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications
Tóm tắt
In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb–EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric field profile. The on-current, transconductance, and cut-off frequency are enhanced in case of GaSb–EDTFET compared with Si-EDTFET due to the combination of the high tunneling efficiency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profile decreases the ambipolar and off current by increasing the tunneling barrier length at the drain/channel interface. Hence, applying Gaussian-doping profile on GaSb–EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/source interface EDTFET is studied which uses GaSb for the source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x = 0.1). It is shown that the blend of Gaussian-doping profile and the heterostructure channel/source interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3 × 10−23 A/μm. The improvements in terms of Ioff, Ion, Ion/Ioff rate, subthreshold swing, transconductance, cut-off frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.
Tài liệu tham khảo
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