Regulation of Interfacial Charge Transfer and Recombination for Efficient Planar Perovskite Solar Cells

Control of dynamics at the electron transport layer–perovskite interface, such as charge transfer and recombination, is essential in achieving high‐efficiency planar perovskite solar cells (PSCs). Herein, it was observed that the trade‐off between unfavorable electron transport of a thick SnO₂ film and serious electron recombination at thin SnO₂ film/perovskite interfaces is essential for the performance of SnO₂‐based planar PSCs. The optimized efficiency of devices beyond 20% is obtained by using a two‐step deposition of SnO₂. Moreover, trap‐assisted carrier recombination is significantly suppressed by using the diethylenetriaminepentaacetic acid passivator via the formation of coordination with undercoordinated Sn and Pb²⁺ ions. As a result, the champion device demonstrates a promising efficiency of 21.28% with negligible hysteresis and much improved environmental stability, i.e., retaining 98% of the initial efficiency under ambient atmosphere over 1000 h.