Điều chỉnh cấu trúc điện tử của hydroxide đôi lớp NiFe / graphene oxide giảm bằng cách bổ sung Mn cho phản ứng sinh oxy hiệu suất cao

Science China Materials - Tập 64 - Trang 2729-2738 - 2021
Binbin Jiang1,2, Weng-Chon Cheong3,4, Renyong Tu3, Kaian Sun3, Shoujie Liu5, Konglin Wu1, Hengshuai Shang1, Aijian Huang6, Miao Wang1, Lirong Zheng7, Xianwen Wei1, Chen Chen3
1Institute of Clean Energy and Advanced Nanocatalysis (iClean), School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan, China
2Anhui Key Laboratory of Functional Coordination Compounds, Anqing Normal University, Anqing, China
3Department of Chemistry, Tsinghua University, Beijing, China
4Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao, China
5Chemistry and Chemical Engineering of Guangdong Laboratory, Shantou, China
6School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
7Beijing Synchrotron Radiation Facility (NSRF), Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China

Tóm tắt

Sự phát triển của các chất điện xúc tác cho quá trình sinh oxy (OER) hiệu quả cao và tiết kiệm chi phí cho các hệ thống năng lượng tái tạo là cần thiết. Việc điều chỉnh cấu trúc điện tử thông qua việc pha tạp nguyên tố dị thường được coi là một trong những chiến lược tiềm năng nhất để cải thiện hiệu suất OER. Bài báo này trình bày việc thiết kế có logic của hydroxide đôi lớp NiFe pha tạp mangan / graphene oxide giảm (Mn-NiFe LDH/rGO) thông qua phương pháp thủy nhiệt dễ dàng, cho thấy hoạt động và độ bền OER xuất sắc. Kết quả thực nghiệm và tính toán lý thuyết hàm mật độ (DFT) cho thấy việc giới thiệu Mn có thể lập trình lại cấu trúc điện tử của các vị trí hoạt động trên bề mặt và thay đổi năng lượng hấp phụ trung gian, do đó làm giảm năng lượng kích hoạt giới hạn tiềm năng cho OER. Cụ thể, composite Mn-NiFe LDH/rGO tối ưu cho thấy hiệu suất OER được cải thiện với điện áp vượt tiểu 240 mV@10 mA cm−2, độ dốc Tafel là 40.0 mV dec−1 và độ ổn định tuyệt vời. Hoạt động OER vượt trội này tương đương với các chất xúc tác OER tiên tiến nhất được công bố gần đây. Công trình này trình bày một chiến lược tiên tiến cho việc thiết kế các điện xúc tác với hoạt tính cao và chi phí thấp cho các ứng dụng chuyển đổi năng lượng.

Từ khóa

#Điện xúc tác #sinh oxy #hydroxide đôi lớp #graphene oxide #điều chỉnh cấu trúc điện tử #mangan.

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