Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions

Journal of Crystal Growth - Tập 278 - Trang 775-779 - 2005
S. Höfling1, R. Kallweit1, J. Seufert2, J. Koeth2, J.P. Reithmaier1, A. Forchel1
1Technische Physik, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
2Nanoplus, Nanosystems and Technology GmbH, Oberer Kirschberg 4a, D-97218 Gerbrunn, Germany

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