Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition
Tài liệu tham khảo
Shah, 2003, Material and solar cell research in microcrystalline silicon, Sol. Energy Mater. Sol. Cells, 78, 469, 10.1016/S0927-0248(02)00448-8
Ray, 2006, Studies on microstructure of silicon thin films and its effect on solar cells, Sol. Energy Mater. Sol. Cells, 90, 631, 10.1016/j.solmat.2005.05.006
Ambrosone, 2006, Microcrystalline silicon thin films grown at high deposition rate by PECVD, Thin Solid Films, 511-512, 280, 10.1016/j.tsf.2005.12.110
Mahan, 2001, Status of Cat-CVD (hot wire CVD) research in the United States, Thin Solid Films, 395, 12, 10.1016/S0040-6090(01)01199-3
Schropp, 2001, Status of Cat-CVD (hot-wire CVD) research in Europe, Thin Solid Films, 395, 17, 10.1016/S0040-6090(01)01200-7
Rath, 2003, Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications, Sol. Energy Mater. Sol. Cells, 76, 431, 10.1016/S0927-0248(02)00258-1
Lien, 2007, Incubation effects upon polycrystalline silicon on glass deposited by hot-wire CVD, Chem. Vap. Deposition, 13, 247, 10.1002/cvde.200606576
Zhou, 1997, Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition, Appl. Phys. Lett., 71, 1534, 10.1063/1.119958
Heya, 2000, Control of polycrystalline silicon structure by the two-step deposition method, Jpn. J. Appl. Phys. (Part I), 39, 3888, 10.1143/JJAP.39.3888
Li, 2008, Highly crystallized silicon films grown on glass without amorphous incubation layers by inductively coupled plasma chemical vapor deposition, J. Cryst. Growth, 310, 4340, 10.1016/j.jcrysgro.2008.07.052
Chung, 2009, Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition, Vacuum, 83, 1431, 10.1016/j.vacuum.2009.05.004
Habuka, 2005, Dominant rate process of silicon surface etching by hydrogen chloride gas, Thin Solid Films, 489, 104, 10.1016/j.tsf.2005.04.121
Flamm, 1990, Mechanisms of silicon etching in fluorine-containing and chlorine-containing plasmas, Pure Appl. Chem., 62, 1709, 10.1351/pac199062091709
Hwang, 2004, Charged clusters in thin film growth, Int. Mater. Rev., 49, 171, 10.1179/095066004225021891