Recovery of minority carrier lifetime in low-cost multicrystalline silicon

Solar Energy Materials and Solar Cells - Tập 73 - Trang 125-130 - 2002
J. Härkönen1, V-P. Lempinen1, T. Juvonen1, J. Kylmäluoma1
1Helsinki University of Technology, Electron Physics Laboratory, P.B. 3000, 02150 Espoo, Finland

Tài liệu tham khảo

International Energy Agency. Report IEA PVPS 1-06, 1998. M.A. Green. Solar cells: operating principles, technology and system applications, Prentice Hall, Engelwood Cliffs, NJ, 1982, p. 150. J.Härkönen, V.-P. Lempinen, J. Kylmäluoma, M. Rajatora, T. Mäkelä, Large area mc-Si solar cells with chromium copper contacts, Proceedings of 16th European Photovoltaic Specialist Conference, 2000, Vol. II, pp. 1486–1488. Vazsonyi, 1999, Improved anisotropic etching process for industrial texturing of silicon solar cells, Sol. Energy Mater. Sol. Cells, 57, 179, 10.1016/S0927-0248(98)00180-9 Hässler, 2000, Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells, Mater. Sci. Eng., B71, 39, 10.1016/S0921-5107(99)00346-3 Schindler, 1991, Defects in multicrystalline silicon, Solid State Phenom., 19&20, 341, 10.4028/www.scientific.net/SSP.19-20.341 Plekhakov, 1999, Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications, Appl. Phys. Lett., 86, 2453