Recent progress in the synthesis of novel two-dimensional van der Waals materials

National Science Review - Tập 9 Số 5 - 2022
Renji Bian1,2, Changcun Li1, Qing Liu1, Guiming Cao1, Qundong Fu3,4,5, Peng Meng5,1, Jiadong Zhou6, Fucai Liu1,2, Zheng Liu4,7,7,5
1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China , Huzhou 313099 , China
3-International-NTU-Thales Research Alliance (CINTRA) , Singapore 637553 , Singapore
4CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore 637553, Singapore
5School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
6Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology , Beijing 100081 , China
7School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Tóm tắt

Abstract The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.

Từ khóa


Tài liệu tham khảo

Radisavljevic, 2011, Single-layer MoS2 transistors, Nat Nanotechnol, 6, 147, 10.1038/nnano.2010.279

Li, 2014, Black phosphorus field-effect transistors, Nat Nanotechnol, 9, 372, 10.1038/nnano.2014.35

Lopez-Sanchez, 2013, Ultrasensitive photodetectors based on monolayer MoS2, Nat Nanotechnol, 8, 497, 10.1038/nnano.2013.100

Li, 2016, Low-dimensional transition metal dichalcogenide nanostructures based sensors, Adv Funct Mater, 26, 7034, 10.1002/adfm.201602136

Deng, 2020, Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4, Science, 367, 895, 10.1126/science.aax8156

Wu, 2019, Natural van der Waals heterostructural single crystals with both magnetic and topological properties, Sci Adv, 5, eaax9989, 10.1126/sciadv.aax9989

Huang, 2017, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature, 546, 270, 10.1038/nature22391

Li, 2021, Printable two-dimensional superconducting monolayers, Nat Mater, 20, 181, 10.1038/s41563-020-00831-1

Novoselov, 2016, 2D materials and van der Waals heterostructures, Science, 353, aac9439, 10.1126/science.aac9439

Geim, 2013, van der Waals heterostructures, Nature, 499, 419, 10.1038/nature12385

Wang, 2019, Chemical vapor transport reactions for synthesizing layered materials and their 2D counterparts, Small, 15, e1804404, 10.1002/smll.201804404

Bugaris, 2012, Materials discovery by flux crystal growth: quaternary and higher order oxides, Angew Chem Int Ed, 51, 3780, 10.1002/anie.201102676

Yan, 2017, Flux growth in a horizontal configuration: an analog to vapor transport growth, Phys Rev Mater, 1, 023402, 10.1103/PhysRevMaterials.1.023402

Huang, 2020, Universal mechanical exfoliation of large-area 2D crystals, Nat Commun, 11, 2453, 10.1038/s41467-020-16266-w

Liu, 2020, Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices, Science, 367, 903, 10.1126/science.aba1416

Soluyanov, 2015, Type-II weyl semimetals, Nature, 527, 495, 10.1038/nature15768

Qian, 2014, Quantum spin Hall effect in two-dimensional transition metal dichalcogenides, Science, 346, 1344, 10.1126/science.1256815

Huang, 2016, Spectroscopic evidence for a type II Weyl semimetallic state in MoTe2, Nat Mater, 15, 1155, 10.1038/nmat4685

Chang, 2016, Prediction of an arc-tunable Weyl Fermion metallic state in MoxW1-xTe2, Nat Commun, 7, 10639, 10.1038/ncomms10639

Yan, 2017, Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2, Nat Commun, 8, 257, 10.1038/s41467-017-00280-6

You, 2021, Two-dimensional topological superconductivity candidate in a van der Waals layered material, Phys Rev B, 103, 104503, 10.1103/PhysRevB.103.104503

Frindt, 1972, Superconductivity in ultrathin NbSe2 layers, Phys Rev Lett, 28, 299, 10.1103/PhysRevLett.28.299

Cui, 2018, Two-dimensional materials with piezoelectric and ferroelectric functionalities, NPJ 2D Mater Appl, 2, 18, 10.1038/s41699-018-0063-5

Qi, 2021, Review on recent developments in 2D ferroelectrics: theories and applications, Adv Mater, 33, e2005098, 10.1002/adma.202005098

Guan, 2019, Recent progress in two-dimensional ferroelectric materials, Adv Electron Mater, 6, 1900818, 10.1002/aelm.201900818

Wu, 2014, Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics, Nature, 514, 470, 10.1038/nature13792

Zhu, 2015, Observation of piezoelectricity in free-standing monolayer MoS2, Nat Nanotechnol, 10, 151, 10.1038/nnano.2014.309

Lin, 2018, Two-dimensional nanomaterials for novel piezotronics and piezophototronics, Mater Today Nano, 4, 17, 10.1016/j.mtnano.2018.11.006

Wang, 2021, van der Waals engineering of ferroelectric heterostructures for long-retention memory, Nat Commun, 12, 1109, 10.1038/s41467-021-21320-2

Wu, 2020, High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation, Nat Electron, 3, 466, 10.1038/s41928-020-0441-9

Neumayer, 2020, The concept of negative capacitance in ionically conductive van der Waals ferroelectrics, Adv Energy Mater, 10, 10.1002/aenm.202001726

Liu, 2016, Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes, Nat Commun, 7, 12357, 10.1038/ncomms12357

Deng, 2020, Thickness-dependent in-plane polarization and structural phase transition in van der Waals ferroelectric CuInP2S6, Small, 16, e1904529, 10.1002/smll.201904529

You, 2019, Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric, Sci Adv, 5, eaav3780, 10.1126/sciadv.aav3780

Brehm, 2020, Tunable quadruple-well ferroelectric van der Waals crystals, Nat Mater, 19, 43, 10.1038/s41563-019-0532-z

Ding, 2017, Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials, Nat Commun, 8, 14956, 10.1038/ncomms14956

Zhou, 2017, Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes, Nano Lett, 17, 5508, 10.1021/acs.nanolett.7b02198

Cui, 2018, Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3, Nano Lett, 18, 1253, 10.1021/acs.nanolett.7b04852

Xiao, 2018, Intrinsic two-dimensional ferroelectricity with dipole locking, Phys Rev Lett, 120, 227601, 10.1103/PhysRevLett.120.227601

Xue, 2018, Multidirection piezoelectricity in mono- and multilayered hexagonal α-In2Se3, ACS Nano, 12, 4976, 10.1021/acsnano.8b02152

Gong, 2017, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals, Nature, 546, 265, 10.1038/nature22060

Wang, 2018, Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor, Nat Nanotechnol, 13, 554, 10.1038/s41565-018-0186-z

Klein, 2018, Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling, Science, 360, 1218, 10.1126/science.aar3617

Song, 2018, Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures, Science, 360, 1214, 10.1126/science.aar4851

Huang, 2018, Electrical control of 2D magnetism in bilayer CrI3, Nat Nanotechnol, 13, 544, 10.1038/s41565-018-0121-3

Butov, 2017, Excitonic devices, Superlattices Microstruct, 108, 2, 10.1016/j.spmi.2016.12.035

Jin, 2018, Ultrafast dynamics in van der Waals heterostructures, Nat Nanotechnol, 13, 994, 10.1038/s41565-018-0298-5

Jiang, 2018, Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures, Nat Commun, 9, 753, 10.1038/s41467-018-03174-3

Yu, 2017, Moiré excitons: from programmable quantum emitter arrays to spin-orbit-coupled artificial lattices, Sci Adv, 3, e1701696, 10.1126/sciadv.1701696

Bistritzer, 2011, Moiré bands in twisted double-layer graphene, Proc Natl Acad Sci USA, 108, 12233, 10.1073/pnas.1108174108

Cao, 2018, Correlated insulator behaviour at half-filling in magic-angle graphene superlattices, Nature, 556, 80, 10.1038/nature26154

Cao, 2018, Unconventional superconductivity in magic-angle graphene superlattices, Nature, 556, 43, 10.1038/nature26160

Park, 2021, Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene, Nature, 590, 249, 10.1038/s41586-021-03192-0

Deng, 2020, Interlayer decoupling in 30° twisted bilayer graphene quasicrystal, ACS Nano, 14, 1656, 10.1021/acsnano.9b07091

Dumcenco, 2020, Growth of van der Waals magnetic semiconductor materials, J Cryst Growth, 548, 125799, 10.1016/j.jcrysgro.2020.125799

Schmidt, 2013, Chemical vapor transport reactions–methods, materials, modeling, Advanced Topics on Crystal Growth, 227, 10.5772/55547

May, 2020, A practical guide for crystal growth of van der Waals layered materials, J Appl Phys, 128, 051101, 10.1063/5.0015971

Wu, 2020, Toward 2D magnets in the (MnBi2Te4)(Bi2Te3)n bulk crystal, Adv Mater, 32, 2001815, 10.1002/adma.202001815

Tsumura, 2018, Extremely large magnetoresistance in a high-quality WTe2 grown by flux method, J Phys Conf Ser, 969, 012134, 10.1088/1742-6596/969/1/012134

Liu, 2018, Three-dimensional magnetic critical behavior in CrI3, Phys Rev B, 97, 014420, 10.1103/PhysRevB.97.014420

Luong, 2019, Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical tunneling electrical resistance measurement, APL Mater, 7, 081102, 10.1063/1.5112130

Zhang, 2016, Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6, Jpn J Appl Phys, 55, 033001, 10.7567/JJAP.55.033001

Zhang, 2015, Flux method growth of bulk MoS2 single crystals and their application as a saturable absorber, CrystEngComm, 17, 4026, 10.1039/C5CE00484E

Xie, 2019, Crystallographic and magnetic properties of van der Waals layered FePS3 crystal, Chin Phys B, 28, 056102, 10.1088/1674-1056/28/5/056102

Coleman, 2011, Two-dimensional nanosheets produced by liquid exfoliation of layered materials, Science, 331, 568, 10.1126/science.1194975

Nicolosi, 2013, Liquid exfoliation of layered materials, Science, 340, 1226419, 10.1126/science.1226419

Cai, 2018, Preparation of 2D material dispersions and their applications, Chem Soc Rev, 47, 6224, 10.1039/C8CS00254A

Yin, 2016, Contributions of phase, sulfur vacancies, and edges to the hydrogen evolution reaction catalytic activity of porous molybdenum disulfide nanosheets, J Am Chem Soc, 138, 7965, 10.1021/jacs.6b03714

Zheng, 2014, High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide, Nat Commun, 5, 2995, 10.1038/ncomms3995

Eda, 2011, Photoluminescence from chemically exfoliated MoS2, Nano Lett, 11, 5111, 10.1021/nl201874w

Zhang, 2020, Intercalation and exfoliation chemistries of transition metal dichalcogenides, J Mater Chem A, 8, 15417, 10.1039/D0TA03727C

Howard, 2021, Exfoliating large monolayers in liquids, Nat Mater, 20, 130, 10.1038/s41563-020-00907-y

Yang, 2020, Emerging 2D materials produced via electrochemistry, Adv Mater, 32, e1907857, 10.1002/adma.201907857

Wang, 2021, Electrochemical delamination of ultralarge few-layer black phosphorus with a hydrogen-free intercalation mechanism, Adv Mater, 33, e2005815, 10.1002/adma.202005815

Wang, 2019, Transition from ferromagnetic semiconductor to ferromagnetic metal with enhanced curie temperature in Cr2Ge2Te6 via organic ion intercalation, J Am Chem Soc, 141, 17166, 10.1021/jacs.9b06929

Yu, 2020, Domain engineering in ReS2 by coupling strain during electrochemical exfoliation, Adv Funct Mater, 30, 10.1002/adfm.202003057

Lin, 2018, Solution-processable 2D semiconductors for high-performance large-area electronics, Nature, 562, 254, 10.1038/s41586-018-0574-4

Wang, 2018, Monolayer atomic crystal molecular superlattices, Nature, 555, 231, 10.1038/nature25774

He, 2019, In situ probing molecular intercalation in two-dimensional layered semiconductors, Nano Lett, 19, 6819, 10.1021/acs.nanolett.9b01898

Moldt, 2011, High-yield production and transfer of graphene flakes obtained by anodic bonding, ACS Nano, 5, 7700, 10.1021/nn202293f

Huang, 2015, Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials, ACS Nano, 9, 10612, 10.1021/acsnano.5b04258

Unarunotai, 2010, Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer, ACS Nano, 4, 5591, 10.1021/nn101896a

Kim, 2013, Layer-resolved graphene transfer via engineered strain layers, Science, 342, 833, 10.1126/science.1242988

Shim, 2018, Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials, Science, 362, 665, 10.1126/science.aat8126

Lee, 2021, Controlled cracking for large-area thin film exfoliation: working principles, status, and prospects, ACS Appl Electron Mater, 3, 145, 10.1021/acsaelm.0c00892

Hakkinen, 2012, The gold-sulfur interface at the nanoscale, Nat Chem, 4, 443, 10.1038/nchem.1352

Desai, 2016, Gold-mediated exfoliation of ultralarge optoelectronically-perfect monolayers, Adv Mater, 28, 4053, 10.1002/adma.201506171

Velicky, 2018, Mechanism of gold-assisted exfoliation of centimeter-sized transition-metal dichalcogenide monolayers, ACS Nano, 12, 10463, 10.1021/acsnano.8b06101

Li, 2009, Large-area synthesis of high-quality and uniform graphene films on copper foils, Science, 324, 1312, 10.1126/science.1171245

Najmaei, 2013, Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers, Nat Mater, 12, 754, 10.1038/nmat3673

Shi, 2012, van der Waals epitaxy of MoS2 layers using graphene as growth templates, Nano Lett, 12, 2784, 10.1021/nl204562j

Lee, 2012, Synthesis of large-area MoS2 atomic layers with chemical vapor deposition, Adv Mater, 24, 2320, 10.1002/adma.201104798

Ji, 2013, Epitaxial monolayer MoS2 on mica with novel photoluminescence, Nano Lett, 13, 3870, 10.1021/nl401938t

Zhang, 2013, Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary, ACS Nano, 7, 8963, 10.1021/nn403454e

Gao, 2015, Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils, Nat Commun, 6, 8569, 10.1038/ncomms9569

Keyshar, 2015, Chemical vapor deposition of monolayer rhenium disulfide (ReS2), Adv Mater, 27, 4640, 10.1002/adma.201501795

Duan, 2014, Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions, Nat Nanotechnol, 9, 1024, 10.1038/nnano.2014.222

Gong, 2015, Two-step growth of two-dimensional WSe2/MoSe2 heterostructures, Nano Lett, 15, 6135, 10.1021/acs.nanolett.5b02423

Hong, 2020, Chemical vapor deposition of layered two-dimensional MoSi2N4 materials, Science, 369, 670, 10.1126/science.abb7023

Noyoselov, 2020, Discovery of 2D van der Waals layered MoSi2N4 family, Natl Sci Rev, 7, 1842, 10.1093/nsr/nwaa190

Han, 2015, Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations, Nat Commun, 6, 6128, 10.1038/ncomms7128

Zhu, 2017, Capture the growth kinetics of CVD growth of two-dimensional MoS2, NPJ 2D Mater Appl, 1, 8, 10.1038/s41699-017-0010-x

Ji, 2015, Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline, Chem Soc Rev, 44, 2587, 10.1039/C4CS00258J

Liang, 2017, Elucidation of zero-dimensional to two-dimensional growth transition in MoS2 chemical vapor deposition synthesis, Adv Mater Interfaces, 4, 1600687, 10.1002/admi.201600687

Cain, 2016, Growth mechanism of transition metal dichalcogenide monolayers: the role of self-seeding fullerene nuclei, ACS Nano, 10, 5440, 10.1021/acsnano.6b01705

Wiesel, 2009, Synthesis of WS2 and MoS2 fullerene-like nanoparticles from solid precursors, Nano Res, 416, 10.1007/s12274-009-9034-7

Zhou, 2018, Unveiling the growth mechanism of MoS2 with chemical vapor deposition: from two-dimensional planar nucleation to self-seeding nucleation, Cryst Growth Des, 18, 1012, 10.1021/acs.cgd.7b01486

Wang, 2014, Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition, Chem Mater, 26, 6371, 10.1021/cm5025662

Govind Rajan, 2016, Generalized mechanistic model for the chemical vapor deposition of 2D transition metal dichalcogenide monolayers, ACS Nano, 10, 4330, 10.1021/acsnano.5b07916

Yang, 2017, Effective shape-controlled growth of monolayer MoS2 flakes by powder-based chemical vapor deposition, Nano Res, 10, 255, 10.1007/s12274-016-1284-6

Li, 2015, Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals, Appl Mater Today, 1, 60, 10.1016/j.apmt.2015.09.001

Zhou, 2018, A library of atomically thin metal chalcogenides, Nature, 556, 355, 10.1038/s41586-018-0008-3

Li, 2018, Vapour-liquid-solid growth of monolayer MoS2 nanoribbons, Nat Mater, 17, 535, 10.1038/s41563-018-0055-z

Liu, 2018, Phase-selective synthesis of 1T′ MoS2 monolayers and heterophase bilayers, Nat Mater, 17, 1108, 10.1038/s41563-018-0187-1

Dong, 2020, The epitaxy of 2D materials growth, Nat Commun, 11, 5862, 10.1038/s41467-020-19752-3

Wang, 2019, Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper, Nature, 570, 91, 10.1038/s41586-019-1226-z

Chen, 2020, Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111), Nature, 579, 219, 10.1038/s41586-020-2009-2

Dumcenco, 2015, Large-area epitaxial monolayer MoS2, ACS Nano, 9, 4611, 10.1021/acsnano.5b01281

Chen, 2015, Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode, ACS Nano, 9, 8368, 10.1021/acsnano.5b03043

Yan, 2015, Direct growth of single and few-layer MoS2 on h-BN with preferred relative rotation angles, Nano Lett, 15, 6324, 10.1021/acs.nanolett.5b01311

Yu, 2017, Precisely aligned monolayer MoS2 epitaxially grown on h-BN basal plane, Small, 13, 1603005, 10.1002/smll.201603005

Ma, 2020, Epitaxial growth of rectangle shape MoS2 with highly aligned orientation on twofold symmetry a-plane sapphire, Small, 16, 2000596, 10.1002/smll.202000596

Wang, 2020, Multiple regulation over growth direction, band structure, and dimension of monolayer WS2 by a quartz substrate, Chem Mater, 32, 2508, 10.1021/acs.chemmater.9b05124

Ruzmetov, 2016, Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride, ACS Nano, 10, 3580, 10.1021/acsnano.5b08008

Xu, 2021, Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2, Science, 372, 195, 10.1126/science.abf5825

Yang, 2018, Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass, Nat Commun, 9, 979, 10.1038/s41467-018-03388-5

Gong, 2014, Vertical and in-plane heterostructures from WS2/MoS2 monolayers, Nat Mater, 13, 1135, 10.1038/nmat4091

Zhang, 2017, Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices, Science, 357, 788, 10.1126/science.aan6814

Sahoo, 2018, One-pot gro of two-dimensional lateral heterostructures via sequential edge-epitaxy, Nature, 553, 63, 10.1038/nature25155

Zhang, 2016, Twinned growth behaviour of two-dimensional materials, Nat Commun, 7, 13911, 10.1038/ncomms13911

Li, 2019, Rational kinetics control toward universal growth of 2D vertically stacked heterostructures, Adv Mater, 31, 1901351, 10.1002/adma.201901351

Li, 2020, General synthesis of two-dimensional van der Waals heterostructure arrays, Nature, 579, 368, 10.1038/s41586-020-2098-y

Liu, 2014, Evolution of interlayer coupling in twisted molybdenum disulfide bilayers, Nat Commun, 5, 4966, 10.1038/ncomms5966

Lin, 2018, Moiré phonons in twisted bilayer MoS2, ACS Nano, 12, 8770, 10.1021/acsnano.8b05006

Zheng, 2015, Coupling and interlayer exciton in twist-stacked WS2 bilayers, Adv Opt Mater, 3, 1600, 10.1002/adom.201500301

Zhao, 2020, Supertwisted spirals of layered materials enabled by growth on non-Euclidean surfaces, Science, 370, 442, 10.1126/science.abc4284

Zou, 2021, 2D materials: rising star for future applications, The Innovation, 2, 100115, 10.1016/j.xinn.2021.100115