Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Advanced Materials Technologies - Tập 5 Số 6 - 2020
Xinyu Xiao1, Jing Hu1, Sheng Tang1, Kai Yan1, Bo Gao1, Hunglin Chen1, Dechun Zou1
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China

Tóm tắt

AbstractThe memristor is the fourth fundamental circuit element discovered after resistors, capacitors, and inductors. Although this concept has only been proposed in 1971 and confirmed in 2008, many materials with memristive properties have been found since 1962. Halide perovskites have been widely used in solar cells, and recently it has been found that they also possess good memristive properties. Different halide perovskites have been applied to memristors, including 3D organic–inorganic hybrid perovskites, 2D organic–inorganic hybrid perovskites, all‐inorganic cesium/rubidium lead halide perovskites, lead‐less and lead‐free perovskites, and halide perovskite quantum dots. Flexible and fiber‐shaped halide perovskite memristors have been fabricated. Several resistive switching mechanisms of halide perovskite memristors have been proposed, and the relationships between halide perovskite memristors and perovskite solar cells have been discussed. Based on halide perovskite memristors, light‐induced resistive switching and logic gate, high‐density and cross‐bar array data storage unit, and artificial synapse have been designed. Herein, recent advances in halide perovskite memristors are comprehensively and systematically reviewed. Finally, the current challenges and potential future directions in this field are discussed.

Từ khóa


Tài liệu tham khảo

10.1109/TCT.1971.1083337

10.1038/nature06932

10.1063/1.1702530

10.1016/j.mser.2014.06.002

10.1021/nl102255r

10.1002/adma.201801187

10.1088/0268-1242/25/6/065002

10.1088/0268-1242/31/6/063002

10.1109/LED.2014.2367542

10.1002/smll.200900642

10.1002/adma.200602564

10.1002/adfm.201100686

10.1002/adma.201302637

10.1039/c2cs35043b

10.1002/aelm.201600195

10.1002/adma.201806663

10.1007/s00339-011-6264-9

10.1080/00018732.2010.544961

10.1063/1.4929512

10.1021/acs.chemrev.9b00107

10.1038/nphoton.2014.134

10.1021/ja809598r

NREL Best Research‐Cell Efficiencies https://www.nrel.gov/pv/cell‐efficiency.html(accessed: December2019).

10.1002/smtd.201700310

10.1002/adma.201801996

10.1002/adom.201900099

10.1039/C6CS00896H

10.1002/smll.201801460

10.1021/jacs.8b10851

10.1002/adma.201700775

10.1002/adma.201605005

10.1002/aenm.201803150

10.1038/nmat4150

10.1002/adma.201502889

10.1039/C5TC02270C

10.1039/C5DT03969J

10.1039/C6TC00141F

10.1021/acsnano.6b01643

10.1002/aelm.201600100

10.1016/j.vacuum.2016.05.010

10.1002/adma.201600859

10.1002/aelm.201600160

10.1039/C6TC02503J

10.1002/admi.201600092

10.1007/s12274-016-1288-2

10.1021/acsami.6b15149

10.1002/admi.201601035

10.1063/1.4976709

10.1016/j.ceramint.2017.02.128

10.1038/srep43794

10.1038/s41598-017-00778-5

10.1039/C7TC00266A

10.1002/admi.201700131

10.1002/adma.201701048

10.1002/adma.201700527

10.1021/acsami.7b08197

10.1039/C7NR05582J

10.1002/aelm.201700344

10.1002/adfm.201704665

10.1038/s41598-017-16805-4

10.1021/acsnano.7b05726

10.1002/adfm.201705783

10.1021/acsnano.7b07317

10.1016/j.orgel.2018.02.001

10.1002/adfm.201800080

10.1002/smll.201703667

10.1002/adts.201700035

10.1021/acs.jpcc.7b12817

10.1002/aelm.201700596

10.1039/C8NR00863A

10.1021/acsami.7b19406

10.1109/JEDS.2018.2820319

10.1016/j.orgel.2018.04.025

10.1002/adma.201800327

10.1021/acsami.8b07850

10.1016/j.tsf.2018.06.032

10.1021/acsami.8b07103

10.1021/acsami.8b07079

10.1002/aelm.201800206

10.1002/aelm.201800190

10.1016/j.orgel.2018.08.034

10.3938/jkps.73.934

10.1016/j.ceramint.2018.09.297

10.1002/adma.201805454

10.1002/admt.201800238

10.1002/aelm.201800586

10.1002/aelm.201800662

10.1002/adfm.201806646

10.1016/j.ceramint.2018.12.038

10.1016/j.apsusc.2018.12.124

10.1016/j.jpcs.2018.12.033

10.1021/acsanm.8b01928

10.1016/j.jallcom.2018.12.369

10.1039/C8NR08934E

10.1088/1361-6463/aafe8e

10.1021/acsami.8b15769

10.1016/j.orgel.2019.02.025

10.1016/j.optmat.2019.01.069

10.1039/C8NR09918A

10.1002/admi.201802071

10.1016/j.orgel.2019.03.019

10.1063/1.5093879

10.1002/adma.201804841

10.1002/admt.201800729

10.1016/j.orgel.2019.04.031

10.1002/pssr.201900182

10.1007/s40843-019-9433-4

10.1021/acsami.9b05038

10.1039/C9NR00438F

10.1021/acsami.9b09080

10.1016/j.jallcom.2019.151999

10.1002/pssr.201900397

10.1021/acsami.9b12931

10.1002/adfm.201906686

10.1002/smll.201905731

Qian W.‐H., 2019, InfoMat

10.1063/1.5120791

Zhu Y., 2019, Adv. Electron. Mater., 5, 1900754

10.1021/acs.jpclett.9b03181

10.1021/acsaelm.9b00836

10.1021/acsami.9b17680

10.1016/j.nanoen.2020.104616

10.1038/s41427-020-0202-2

10.1002/ange.201809781

10.1002/anie.201809781

10.1038/s41598-017-05508-5

10.1088/1361-6528/ab2084

10.1002/adfm.201303520

10.1016/S0079-7421(08)60422-3

10.1002/adma.201506363

10.1038/nature07569

10.1002/adfm.201908901

10.1002/adfm.201808843

Thông tin
Thông tin xuất bản

Advanced Materials Technologies

Tập 5 Số 6

Thông tin tác giả