Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

IEEE Journal of Photovoltaics - Tập 3 Số 4 - Trang 1184-1191 - 2013
Armin Richter1, Martin Hermle1, Stefan W. Glunz1
1Fraunhofer Institute for Solar Energy Systems, Freiburg, Germany

Tóm tắt

Từ khóa


Tài liệu tham khảo

10.1016/0379-6787(82)90057-6

10.1016/0038-1101(92)90325-7

10.1109/PVSC.1997.654065

10.1103/PhysRevB.86.165202

0

10.1002/pip.911

10.1016/j.solmat.2008.06.009

0

10.1103/PhysRevB.77.085203

10.1063/1.368545

10.1063/1.1529297

10.1007/s10825-011-0367-6

10.1063/1.3506706

10.1002/pip.4670030303

10.1109/T-ED.1984.21594

0

10.1109/T-ED.1984.21588

10.1002/pip.464

lanyon, 1979, bandgap narrowing in moderately to heavily doped silicon, IEEE Transactions on Electron Devices, 26, 1014, 10.1109/T-ED.1979.19538

10.1103/PhysRevLett.65.215

10.1063/1.1610231

10.1063/1.1432476

10.1063/1.1736034

10.1063/1.2218041

maki, 2011, High-efficiency HIT solar cells with a very thin structure enabling a high V<formula formulatype="inline"><tex Notation="TeX">$_{\rm OC}$</tex></formula>, Proc 25th IEEE Photovoltaic Specialists Conf

10.1002/(SICI)1099-159X(199907/08)7:4<327::AID-PIP250>3.0.CO;2-B

green, 1995, Silicon Solar Cells Advanced Principles and Practice

10.1063/1.110489

10.1038/35090539

10.1109/JPHOTOV.2012.2198434

10.1063/1.353288

10.1088/0022-3719/15/18/012