Realization of one-chip-two-wavelength light sources
Tài liệu tham khảo
Sakai, 1982, InGaAsP/InP dual wavelength lasers, Electron Lett, 18, 17, 10.1049/el:19820013
Saito, 1995, Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy, Appl Phys Lett, 66, 2466, 10.1063/1.113997
Katayama, 1997, Dual wavelength optical head for 0.6mm and 1.2mm substrate thicknesses, Jpn J Appl Phys, 36, 460, 10.1143/JJAP.36.460
Shih, 1999, Holographic laser module with dual wavelength for digital versatile disc optical heads, Jpn J Appl Phys, 38, 1750, 10.1143/JJAP.38.1750
Nemoto, 2001, Monolithic-integrated two-wavelength laser diodes for digital-versatile-disk/compact-disk playback, Appl Phys Lett, 78, 2270, 10.1063/1.1360231
Gomyo, 1989, Large (6°) off-angle effects on sublattice ordering and band-gap energy in Ga0.5In0.5P grown on (001) GaAs substrates, Jpn J Appl Phys, 28, L1728, 10.1143/JJAP.28.L1728
Gomyo, 1987, Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy, Appl Phys Lett, 50, 673, 10.1063/1.98062
Kuo, 1997, Nature and origins of stacking faults from a ZnSe/GaAs interface, J Vac Sci Technol B, 15, 1241, 10.1116/1.589445
Choi, 1995, Compositional dependence of the ordering probability in GayIn(1−y)P/GaAs grown by metalorganic chemical vapor deposition, J Appl Phys, 77, 3111, 10.1063/1.358662
Choi, 1995, Hydrogen effect on 670-nm AlGaInP visible laser during high temperature operation, IEEE J Sel Quantum Electron, 1, 717, 10.1109/2944.401262
Yao, 1985, Characterization of ZnSe grown by molecular-beam epitaxy, J Cryst Growth, 72, 31, 10.1016/0022-0248(85)90114-9
Song, 2003, Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors, Appl Phys Lett, 82, 4095, 10.1063/1.1578178