Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe

Energy and Environmental Science - Tập 12 Số 10 - Trang 3089-3098
Youyong Li1,2,3,4,5, Jiye Zhang1,4,5,6, Shanshan Pan1,4,5,6, Ying Jiang1,7,5,6, Ke Wang1,7,5,6, Jiong Yang1,7,5,6, Yanzhong Pei1,8,9,10, Qing Zhu3,11, Matthias T. Agne12,13,14, G. Jeffrey Snyder12,13,14, Zhifeng Ren3,11, Wenqing Zhang1,15,16,17,18, Jun Luo1,19,7,4,5
1China
2Department of Physics and Texas Center for Superconductivity University of Houston
3Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX, 77204, USA
4School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
5Shanghai 200444
6Shanghai University
7Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai, 200444, China
8School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, China
9Shanghai 201804
10Tongji University
11Houston
12Department of Materials Science and Engineering Northwestern University Evanston, IL 60208 (USA)
13Evanston
14Northwestern University
15Department of Physics
16Institute for Quantum Science and Engineering, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
17Shenzhen 518055
18Southern University of Science and Technology
19Materials Genome Institute

Tóm tắt

A nearly perfect dynamic doping effect is realized in PbTe through Cu intercalation, resulting in fully optimized temperature-dependent electrical-transport properties.

Từ khóa


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Thông tin
Thông tin xuất bản

Energy and Environmental Science

Tập 12 Số 10

3089-3098

Thông tin tác giả