Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Journal of Raman Spectroscopy - Tập 50 Số 11 - Trang 1630-1641 - 2019
Yannick Bleu1, Florent Bourquard1, Anne‐Sophie Loir1, Vincent Barnier2, Florence Garrelie1, Christophe Donnet1
1Univ de Lyon, Université Jean Monnet Saint‐Etienne, CNRS Institut d'Optique Graduate School, Laboratoire Hubert Curien UMR 5516, F‐42023 Saint‐Etienne France
2Mines Saint‐Etienne Univ Lyon, CNRS, UMR 5307 LGF, Centre SMS, F‐42023 Saint‐Etienne France

Tóm tắt

AbstractWe report the results of a comparative investigation of graphene films prepared on Si(100) and fused silica (SiO2) combining pulsed laser deposition and rapid thermal annealing using Ni catalyst. The effect of modifying the substrate and/or growth temperature (600–1,000°C) of graphene synthesis was investigated by Raman microspectroscopy mapping. Graphene grown on Si(100) was multilayered, and various nickel silicide phases had formed underneath, revealing dependence on the growth temperature. Films prepared on SiO2 mainly comprised bilayered and trilayered graphene, with no traces of nickel silicide. Analysis of Raman D, G, and 2D peak intensities and positions showed that modifying the growth temperature had different effects when a Si(100) or a SiO2 substrate is used. These findings advance our understanding of how different combinations of substrate and thermal processing parameters affect graphene synthesis from solid carbon source using nickel as a catalyst. This knowledge will enable better control of the properties of graphene film (defects, number of layers, etc.) and will have a high potential impact on the design of graphene‐based devices for scientific or industrial applications.

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Thông tin xuất bản

Journal of Raman Spectroscopy

Tập 50 Số 11

1630-1641

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