Radiation stimulated annealing of structural defects in layer structures based on Si and III–V compounds
Tóm tắt
Từ khóa
Tài liệu tham khảo
V. S. Vavilov, A. E. Kiv and O. R. Niyazova, The Mechanisms of Defect Creation and Migration in Semiconductors, Nauka, Moscow, 1981.
M. N. Abuladze, A. B. Gerasimov, V. G. Litovchenko, T. E. Melkadze and A. G. Shillo, Fiz. Tekh. Polupr.,8, 791, 1974.
V. A. Zuev, D. V. Korbutyak and V. G. Litovchenko, Fiz. Tekh. Polupr.,8, 1651, 1974.
V. G. Litovchenko, V. Ya. Kiblik and R. O. Litvinov, Ukr. Fiz. Zh.,22, 1097, 1977, Optoelektronika i poluprovodnikovaya tekhn., Naukova Dumka, Kiev,1, 69, 1982.
O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova and V. G. Litovchenko, Radiat. Eff.,42, 249, 1979; Phys. Stat. Sol. (a),58, K 25, 1980.
D. I. Fitzgerald and A. S. Grove, Patent N 3513035, 1970, USA.