RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

Applied Surface Science - Tập 284 - Trang 798-803 - 2013
J.L. Liu1, C.M. Li1, R.H. Zhu1, J.C. Guo, L.X. Chen1, J.J. Wei, L.F. Hei1, J.J. Wang2, Z.H. Feng2, H. Guo3, F.X. Lv1
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, PR China
2Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shi Jia Zhuang 050051, PR China
3Institute of Laser, Academy of Science of Hebei Province, Shi Jia Zhuang 050000, PR China

Tài liệu tham khảo

Kasu, 2006, High RF output power for H-terminated diamond FETs, Diamond Relat. Mater., 15, 783, 10.1016/j.diamond.2005.12.025 Calvani, 2009, Microwave performance of surface channel diamond MESFETS Russell, 2012, Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53GHz, IEEE Electron Device Lett., 33, 1471, 10.1109/LED.2012.2210020 El-Hajj, 2008, Characteristics of boron δ-doped diamond for electronic applications, Diamond Relat. Mater., 17, 409, 10.1016/j.diamond.2007.12.030 Strobel, 2004, Surface transfer doping of diamond, Nature, 430, 439, 10.1038/nature02751 Yamada, 2012, Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size, Diamond Relat. Mater., 24, 29, 10.1016/j.diamond.2011.09.007 Ueda, 2006, Diamond FET using high-quality polycrystalline diamond with fT of 45GHz and fmax of 120GHz, IEEE Electron Device Lett., 27, 570, 10.1109/LED.2006.876325 Williams, 2002, Black diamond: a new material for active electronic devices, Diamond Relat. Mater, 11, 396, 10.1016/S0925-9635(02)00024-9 Williams, 2003, High carrier mobilities in black diamond, Semicond. Sci. Technol., 18, 77, 10.1088/0268-1242/18/3/311 Camarchia, 2011, RF power performance evaluation of surface channel diamond MESFETs, Solid State Electron., 55, 19, 10.1016/j.sse.2010.09.001 Rossi, 2009, RF power performance evaluation of surface channel diamond MESFET, MRS Proc., 1203, J15, 10.1557/PROC-1203-J15-04 Lu, 2000, Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode, Diamond Relat. Mater., 9, 1655, 10.1016/S0925-9635(00)00305-8 Lu, 2001, Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode, Diamond Relat. Mater., 10, 1551, 10.1016/S0925-9635(01)00407-1 Hei, 2012, A review on mechanical properties of freestanding diamond films, Adv. Mater. Res., 490–495, 3059, 10.4028/www.scientific.net/AMR.490-495.3059 Ralchenko, 2011, Strength of optical quality polycrystalline CVD diamond, Inorg. Mater., 2, 439, 10.1134/S2075113311050273 Liu, 2013, Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD, Diamond Relat. Mater., 32, 48, 10.1016/j.diamond.2012.11.013 Ando, 1993, Diffuse reflectance infrared Fourier-transform study of the plasma hydrogenation of diamond surfaces, J. Chem. Soc. Faraday Trans., 89, 1383, 10.1039/ft9938901383 Manfredotti, 2008, A comprehensive study on hydrogenated diamond surfaces as obtained by using molecular hydrogen, Diamond Relat. Mater., 17, 1154, 10.1016/j.diamond.2008.02.001 Ando, 1993, Fourier-transform infrared photoacoustic studies of hydrogenated diamond surface, J. Chem. Soc. Faraday Trans., 89, 749, 10.1039/ft9938900749 Maier, 2000, Origin of surface conductivity in diamond, Phys. Rev. Lett., 85, 3472, 10.1103/PhysRevLett.85.3472 Ilias, 1996, Planarization of diamond thin film surfaces by ion beam etching at grazing incidence angle, Diamond Relat. Mater., 5, 835, 10.1016/0925-9635(95)00412-2 Rawles, 1997, Mechanism of surface smoothing of diamond by a hydrogen plasma, Diamond Relat. Mater., 6, 791, 10.1016/S0925-9635(96)00623-1 Williams, 2010, Size-dependent reactivity of diamond nanoparticles, ACS Nano, 4, 4824, 10.1021/nn100748k Hirama, 2008, Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance, Appl. Phys. Lett., 92, 112107, 10.1063/1.2889947 Feng, 2013, Polycrystalline diamond MESFETs by Au-mask technology for RF applications, Sci. China Technol. Sci., 56, 957, 10.1007/s11431-013-5163-z Statz, 1974, Noise characteristics of gallium arsenide field effect transistor, IEEE Trans. Electron Devices, 21, 549, 10.1109/T-ED.1974.17966 Moran, 2012, High frequency hydrogen-terminated diamond field effect transistor technology Kubovic, 2010, Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surface, Appl. Phys. Lett., 96, 052101, 10.1063/1.3291616 Kubovic, 2010, Electronic and surface properties of H-terminated diamond surface affected by NO2 gas, Diamond Relat. Mater., 19, 889, 10.1016/j.diamond.2010.02.021 Ley, 2006, Surface conductivity of the diamond: a novel transfer doping mechanism, Phys. B: Cond. Mat., 376-377, 262, 10.1016/j.physb.2005.12.068 Sque, 2007, Modelling the effect of doping metallic carbon nanotubes on their ability to transfer-dope diamond, Phys. Status Solidi A, 204, 2898, 10.1002/pssa.200776308 Fukuta, 1976, GaAs microwave power FET, IEEE Trans. Electron Devices, 23, 388, 10.1109/T-ED.1976.18416