Quiescent operating point shift in bipolar transistors with AC excitation

torrey, 1964, Crystal Rectifiers

10.1109/TEMC.1979.303772

ghosh, 1965, a distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device, IEEE Transactions on Electron Devices, 12, 513, 10.1109/T-ED.1965.15603

rey, 1969, Solid State Electronics, 12, 645, 10.1016/0038-1101(69)90037-9

10.1109/JRPROC.1958.286897

kumar, 1977, a study of the effect of peripheral injection in bipolar transistors using simplified computer analysis, IEEE Transactions on Electron Devices, 24, 86, 10.1109/T-ED.1977.18685

gray, 1969, Electronic Principles Physics Models and Circuits

richardson, 1978, Modeling of microwave rectification RFI effects in low frequency circuitry, Proc IEEE Int Symp Electromagn Compat

10.1109/TEMC.1975.303426

chamberlain, 1976, modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors, IEEE Transactions on Electron Devices, 23, 1345, 10.1109/T-ED.1976.18661