Quasi-drift diffusion model for the quantum dot intermediate band solar cell
Tóm tắt
This paper describes the application of the drift-diffusion model in order to illustrate the operation of the quantum dot intermediate band solar cell (QD-IBSC) and its validity limits. The main particularities of the model arise from the fact that the intermediate band solar cell (IBSC) is a two-minority carrier device. The role of the current transport in the IB is discussed, providing the beneficial conditions in which this current approaches zero. The electric field is also related to the current density in the intermediate band. The conditions in which the contribution of the electron and hole drift currents is small when compared to the total current are discussed. The description of the operation of the cell is aided by means of a numerical example.
Từ khóa
#Photovoltaic cells #Current density #Semiconductor device modeling #Quantum dots #Charge carrier processesTài liệu tham khảo
10.1016/S1386-9477(02)00368-5
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