Quantum Characterization of Some Cluster-Based Materials

Journal of Cluster Science - 1999
Guang-hou Wang1
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Center for Advanced Studies of Science and Technology of Microstructures, Nanjing, People's Republic of China

Tóm tắt

Three kinds of cluster-based materials are prepared by evaporation and inert gas condensation method. Their structures and properties are examined by transmission electron microscopy, Raman scattering, STM/STS, optical spectroscopy, etc. Some important results are obtained: (1) surface phonon modes of quasi-free Si clusters are observed when Si clusters softly land onto the mother skeleton of the porous silicon and/or through grazing angle collisions with the walls of the pores; (2) very sharp peaks of conductance resonances are obtained when the STM tip is right on the top of the Au cluster deposited on the H-terminated silicon crystal; and (3) large blue shifts and photoluminescence from violet to orange with main peaks in the blue range are observed from Ge cluster-based nanofilms at an excitation wavelength of 370 nm. Mechanisms are discussed including the quantum confinement effect of the Ge cluster cores, radiation transition from oxygen difficiency centers in the oxide surface layers, and exciton confinement in the interfacial layers between the crystalline cores and the oxide shells.

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