Quantitative mapping of switching behavior in piezoresponse force microscopy

Review of Scientific Instruments - Tập 77 Số 7 - 2006
Stephen Jesse1, Ho Nyung Lee1, Sergei V. Kalinin1
1Oak Ridge National Laboratory Materials Sciences and Technology Division, , Oak Ridge, Tennessee 37831

Tóm tắt

The application of ferroelectric materials for nonvolatile memory and ferroelectric data storage necessitates quantitative studies of local switching characteristics and their relationship to material microstructure and defects. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is developed as a quantitative tool for real-space imaging of imprint, coercive bias, remanent and saturation responses, and domain nucleation voltage on the nanoscale. Examples of SS-PFM implementation, data analysis, and data visualization are presented for epitaxial lead zirconate titanate (PZT) thin films and polycrystalline PZT ceramics. Several common artifacts related to the measurement method, environmental factors, and instrument settings are analyzed.

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Review of Scientific Instruments

Tập 77 Số 7

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