Quantenchemische Untersuchung der Elementarprozesse beim Plasmaätzen im System Fluor/Silizium
Tóm tắt
Using the cluster model of the silicon (111) surface we derive by means of EHT calculations a mechanism of reactive plasma etching in the system F/Si including diffusion processes. Species SiF2 are found to be the primary etching products at the surface. SiF4 is formed with high probability in the gas phase.