Pulse Diffused N+ Layers in GaAs
Tóm tắt
Pulse diffusion has been used for doping GaAs n-type to over 1019 cm−3. Surface arsenic loss is avoided through using As2Se3 as the diffusion source. A reduction in electrical activity similar to that reported for pulse annealed implanted layers occurs with any subsequent heat treatment. A resistive region, found at the surface of the profile, can be circumvented through additionally heating the GaAs thermally during the pulse diffusion and reducing the rapidity of the quench.
Tài liệu tham khảo
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