Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

Nanomaterials - Tập 10 Số 8 - Trang 1550
Hojeong Ryu1, Sungjun Kim1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Korea

Tóm tắt

Memristor-type synaptic devices that can effectively emulate synaptic plasticity open up new directions for neuromorphic hardware systems. Here, a double high-k oxide structured memristor device (TaOx/HfO2) was fabricated, and its synaptic applications were characterized. Device deposition was confirmed through TEM imaging and EDS analysis. During the forming and set processes, switching of the memristor device can be divided into three types by compliance current and cycling control. Filamentary switching has strengths in terms of endurance and retention, but conductance is low. On the other hand, for interface-type switching, conductance is increased, but at the cost of endurance and retention. In order to overcome this dilemma, we proposed pseudo interface-type switching, and obtained excellent retention, decent endurance, and a variety of conductance levels that can be modulated by pulse response. The recognition rate calculated by the neural network simulation using the Fashion Modified National Institute of Standards and Technology database (MNIST) dataset, and the measured conductance values show that pseudo interface-type switching produces results that are similar to those of an interface-type device.

Từ khóa


Tài liệu tham khảo

Patil, 2020, Bipolar resistive switching, synaptic plasticity and non-volatile memory effects in the solution-processed zinc oxide thin film, Mater. Sci. Semicond. Process., 106, 104769, 10.1016/j.mssp.2019.104769

Liu, 2020, Synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors, J. Phys. D Appl. Phys., 53, 035302, 10.1088/1361-6463/ab4e70

Shi, 2019, An Electric-Field-Controlled High-Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating, Adv. Electron. Mater., 5, 1900020, 10.1002/aelm.201900020

Cho, H., Ryu, J.-H., Mahata, C., Ismail, M., Chen, Y.-C., Chang, Y.-F., Cho, S., Mikhaylov, A.N., Lee, J.C., and Kim, S. (2020). Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures. J. Phys. D Appl. Phys.

Akinaga, 2010, Resistive random access memory (ReRAM) based on metal oxides, Proc. IEEE, 98, 2237, 10.1109/JPROC.2010.2070830

Yamamoto, 2010, Nonvolatile static random access memory using resistive switching devices: Variable-transconductance metal-oxide-semiconductor field-effect-transistor approach, Jpn. J. Appl. Phys., 49, 040209, 10.1143/JJAP.49.040209

Zuo, 2009, Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory, J. Appl. Phys., 106, 073724, 10.1063/1.3236632

Wang, 2017, Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System, Nanoscale Res. Lett., 12, 65, 10.1186/s11671-017-1847-9

Cho, 2020, Conduction mechanism and synaptic behaviour of interfacial switching AlOσ-based RRAM, Semicond. Sci. Technol., 35, 085006, 10.1088/1361-6641/ab8d0e

Tominov, R.V., Vakulov, Z.E., Avilov, V.I., Khakhulin, D.A., Fedotov, A.A., Zamburg, E.G., Smirnov, V.A., and Ageev, O.A. (2020). Synthesis and memristor effect of a forming-free zno nanocrystalline films. Nanomaterials, 10.

Rahmani, M.K., Kim, M.H., Hussain, F., Abbas, Y., Ismail, M., Hong, K., Mahata, C., Choi, C., Park, B.G., and Kim, S. (2020). Memristive and synaptic characteristics of nitride-based heterostructures on si substrate. Nanomaterials, 10.

Mikhaylov, 2020, Multilayer Metal-Oxide Memristive Device with Stabilized Resistive Switching, Adv. Mater. Technol., 5, 1900607, 10.1002/admt.201900607

Emelyanov, 2020, Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights, Nanotechnology, 31, 045201, 10.1088/1361-6528/ab4a6d

Wiefels, 2018, Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx, Adv. Electron. Mater., 4, 1700458, 10.1002/aelm.201700458

Hwang, 2020, Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor, Mater. Des., 187, 108400, 10.1016/j.matdes.2019.108400

Atanassova, 2010, High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity, Microelectron. Eng., 87, 668, 10.1016/j.mee.2009.09.006

Yoon, 2016, Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2−x Structure with a Sub-μm2 Cell Area, ACS Appl. Mater. Interfaces, 8, 18215, 10.1021/acsami.6b05657

Yoon, 2014, Highly uniform, electroforming-free, and self-rectifying resistive memory in the Pt/Ta2O5/HfO2−x/TiN structure, Adv. Funct. Mater., 24, 5086, 10.1002/adfm.201400064

Zhou, 2015, Mott Memory and Neuromorphic Devices, Proc. IEEE, 103, 1289, 10.1109/JPROC.2015.2431914

Shi, 2014, Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping, Nature Comm., 5, 4860, 10.1038/ncomms5860

Kim, 2016, Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures, Appl. Phys. Lett., 108, 212103, 10.1063/1.4952719

Huang, 2013, Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate, ACS Appl. Mater. Interfaces, 5, 6017, 10.1021/am4007287

Azzaz, M., Vianello, E., Sklenard, B., Blaise, P., Roule, A., Sabbione, C., Bernasconi, S., Charpin, C., Cagli, C., and Jalaguier, E. (2016, January 15–18). Endurance/Retention Trade off in HfOx and TaOx Based RRAM. Proceedings of the 2016 IEEE 8th International Memory Workshop (IMW), Paris, France.

Kim, 2018, Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device, Nanotechnology, 29, 415204, 10.1088/1361-6528/aad64c

Wang, C., Wu, H., Gao, B., Dai, L., Sekar, D.C., Lu, Z., Bronner, G., Wu, D., and Qian, H. (2016, January 15–18). The Statistical Evaluation of Correlations between LRS and HRS Relaxations in RRAM Array. Proceedings of the 2016 IEEE 8th International Memory Workshop (IMW), Paris, France.

Gong, 2018, Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles with RTN Measurements, IEEE Electron Device Lett., 39, 1152, 10.1109/LED.2018.2849730

Lee, 2014, Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory, Appl. Phys. Lett., 104, 083507, 10.1063/1.4866671

Padovani, 2018, Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications, IEEE Electron Device Lett., 39, 672, 10.1109/LED.2018.2821707

Zhu, 2016, Synergistic Resistive Switching Mechanism of Oxygen Vacancies and Metal Interstitials in Ta2O5, J. Phys. Chem. C, 120, 2456, 10.1021/acs.jpcc.5b11080

Woo, 2018, Resistive memory-based analog synapse: The pursuit for linear and symmetric weight update, IEEE Nanotechnol. Mag., 12, 36, 10.1109/MNANO.2018.2844902

Zhang, 2019, Analog-Type Resistive Switching Devices for Neuromorphic Computing, Phys. Status Solidi Rapid Res. Lett., 13, 1900204, 10.1002/pssr.201900204

Bang, S., Oh, M.H., Kim, M.H., Kim, T.H., Lee, D.K., Choi, Y.J., Kim, C.S., Hong, K., Cho, S., and Kim, S. (2020, January 19–22). Validation of spiking neural networks using resistive-switching synaptic device with spike-rate-dependent plasticity. Proceedings of the 2020 International Conference on Electronics, Information, and Communication (ICEIC), Barcelona, Spain.

Zhao, 2020, Reliability of analog resistive switching memory for neuromorphic computing, Appl. Phys. Rev., 7, 011301, 10.1063/1.5124915

Thông tin
Thông tin xuất bản

Nanomaterials

Tập 10 Số 8

1550

Thông tin tác giả