Properties of CuInSe2 films obtained by methods of selenization and quasi-equilibrium deposition
Tóm tắt
The CuInSe2 films obtained by selenization and quasi-equilibrium deposition are investigated by elemental, X-ray phase, and chemical analyses. Temperature dependences of electric parameters are determined and photoelectric measurements are performed. It is shown that high-quality p-type films can be obtained by both methods. More uniform n-type films are obtained by selenization at lower temperatures. The strongest photoresponse was observed for the CuInSe2/CdS structures deposited under quasi-equilibrium conditions. Dispersion and sizes of polycrystalline grains are studied.
Tài liệu tham khảo
Wolf, E.L., Nanophysics and Nanotechnology, Weinhein: WIEY-VCH, 2004.
Rau, V. and Schok, H.W., Electronic Properties of Cu(In,Ga)Se2 Heterojunction Solar Cells—Recent Achievements, Current Understanding, and Future Challenges, Appl. Phys. A, 1999, vol. 69, pp. 131–147.
Abdullaev, M.A., Magomedova, Dzh. Kh., Gadzhieva, R.M. et al., Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2001, vol. 35,issue 8, pp. 906–908 [Semiconductors (Engl. Transl.), vol. 35, issue 8, pp. 870–872).
Abu Shama Jehad, A.M., Johnston, S., and Noufi, R.J., Band Like and Localized Defect States in CuInSe2 Solar Cells, Phys. Chem. Solids, 2005, vol. 66, no. 1, pp. 1855–1857.
Gadzhiev, T.M., Khokhlachev, P.P., Babaev, A.A. et al., Thermovoltage in p-Type and n-Type CuInSe2 Single Crystals, Doklady VIII Mezhdunarodnogo seminara “Termoelektriki i ikh primenenie” (Proc. VIII Int. Seminar on Thermoelectrics and Their Applications), St. Petersburg, 2002, pp. 226–230.
Safaraliev, G.K., Bilalov, B.A., Gadzhieva, R.M. et al., Technology of Obtaining and X-Ray Diffraction Studies of CuInSe2 Thin Films, Tezisy dokladov IV Mezhdunarodnoi konferentsii “Khimiya tverdogo tela i sovremennye mikro-i nanotekhnologii (Proc. IV Int. Conf. on Chemistry of Solids and Modern Microtechnologies and Nanotechnologies), Kislovodsk, 2004, p. 400.
Magomedov, M.-R.A., Amirkhanova, Dzh.Kh., Ismailov, Sh.M. et al., Effect of Thermal Treatment on Electrical Properties of Thin Films of Copper-Indium Diselenide, Zh. Tekh. Fiz., 1997, vol. 67, no. 3, pp. 34–38.
Abdullaev, M.A., Kamilov, I.K., Magomedova, Dzh.Kh. et al., Effect of Methods of Obtaining and Thickness of the In2O3 Layer on Electrical and Photovoltaic Properties of the In2O3/CuInSe2 Heterostructures, Neorg. Mater., 2004, vol. 40, no. 11, pp. 1345–1349 [Inorg. Mater. (Engl. Transl.), vol. 40, no. 11, pp. 1181–1185.
Kamilov, I.K., Ismailov, Sh.M., Magomedov, M.-R.A. et al., Influence of Evaporation Conditions on the Thermal Conductivity of CuInSe2 Films Using Pulse Nonlinearity Measurements, Proc. Int. Conf. on Thermoelectrics and Supplying, St. Petersburg, 2002, pp. 260–263, 463.
Gadzhiev, T.M., Gadzhieva, R.M., Magomedova, Dzh.Kh., and Khokhlachev, P.P., Microstructure and Scattering at Grain Boundaries in Polycrystalline CuInSe2 Films Obtained by Selenization, Trudy Mezhdunarodnoi konferentsii (Proc. Int. Conf.) “Ordering in Metals and Alloys” (OMA-9), Rostov-on-Don, 2006, vol. 1, pp. 110–111.
Sheperd, C.J., Alberts, V., and Bekker, W.J., Deposition of CuIn(Se,S)2 Thin Films by Sulfurization of Selenized Cu/In Alloys, Phys. Status Solidi A., 2004, vol. 201, no. 10, pp. 2234–2238.
Abdullaev, M.A., Gadzhieva, R.M., Magomedova, Dzh.Kh., and Khokhlachev, P.P., Effect of Intrinsic Defects on Hopping Conduction in n-and p-Type CuInSe2 Crystals, Neorg. Mater., 1997, vol. 33, no. 4, pp. 411–414 [Inorg. Mater. (Engl. Transl.), vol. 33, no. 4, pp. 342–345].
Averkieva, G.K., Boiko, M.E., Polushina, I.K., and Prochukhanov, V.D., Intrinsic Defects and Conduction Type of CuInSe2 Single Crystals, Fiz. Tverd. Tela, 1994, vol. 36, no. 3, pp. 822–826.
Gudaev, O.A. and Malinovskii, V.K., Transport of Charge Carriers and the Mayer-Neldel Empiric Rule for Disordered Materials, Fiz. Tverd. Tela, 1995, vol. 37, no. 1, pp. 79–90.