Preparation and characterisation of PZT films by RF-magnetron sputtering

Journal of Alloys and Compounds - Tập 509 - Trang 6242-6246 - 2011
Raluca Frunza1, Dan Ricinschi2,3, Felicia Gheorghiu4, Radu Apetrei4, Dumitru Luca4, Liliana Mitoseriu4, Masanori Okuyama2
1Jozef Stefan Inst, Elect Ceram Dept., Ljubljana 1001, Slovenia
2Osaka University, Graduate School of Eng. Science, Dept. of Systems Innovation, 1-3, Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
3Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering, 4259-G2-25 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
4Faculty of Physics, Al. I. Cuza Univ., 11 Bv. Carol I, 700506 Iasi, Romania

Tài liệu tham khảo

Scott, 1998, Integr. Ferroelectr., 20, 15, 10.1080/10584589808238762 Muralt, 2000, J. Microeng., 10, 136, 10.1088/0960-1317/10/2/307 Eichner, 1999, Sens. Actuators, 76, 247, 10.1016/S0924-4247(99)00039-4 Yu, 2004, J. Appl. Phys., 96, 2792, 10.1063/1.1775305 Guo, 2000, Phys. Rev. Lett., 84, 5423, 10.1103/PhysRevLett.84.5423 Cerqueira, 2000, Ceram. Int., 26, 231, 10.1016/S0272-8842(99)00047-4 Bruchhaus, 1992, Ferroelectrics, 133, 73, 10.1080/00150199208217978 Song, 1998, Appl. Phys. Lett., 72, 2686, 10.1063/1.121099 Bhaskar, 2007, Thin Solid Films, 515, 2891, 10.1016/j.tsf.2006.08.044 Otsubo, 1990, Jpn. J. Appl. Phys., 29, L133, 10.1143/JJAP.29.L133 Kidoh, 1992, Jpn. J. Appl. Phys., 31, 2965, 10.1143/JJAP.31.2965 Verardi, 1999, Appl. Surf. Sci., 138/139, 552, 10.1016/S0169-4332(98)00577-7 Pham, 2004, Ceram. Int., 30, 1499, 10.1016/j.ceramint.2003.12.131 Iijima, 1991, Jpn. J. Appl. Phys., 30, 2149, 10.1143/JJAP.30.2149 Hase, 1991, Jpn. J. Appl. Phys., 30, 2159, 10.1143/JJAP.30.2159 Oh, 1998, Appl. Phys. Lett., 72, 1457, 10.1063/1.120609 Li, 1993, Appl. Phys. Lett., 63, 2345, 10.1063/1.110521 Tunkasiri, 2000, J. Mater. Sci. Lett., 19, 1913, 10.1023/A:1006751130581 Haccart, 2002, Semicond. Phys., Quantum Electron. Optoelectron., 5, 78, 10.15407/spqeo5.01.078 Masuda, 2001, Appl. Surf. Sci., 169–170, 539, 10.1016/S0169-4332(00)00716-9 Delobelle, 2005, Integr. Ferroelectr., 69, 213, 10.1080/10584580590898721 Kanno, 2005, J. Appl. Phys., 97, 074101, 10.1063/1.1871332 Izyumskaya, 2007, Crit. Rev. Solid State Mater. Sci., 32, 111, 10.1080/10408430701707347 Bouregba, 2009, J. Appl. Phys., 106, 044101, 10.1063/1.3200956 Ricinschi, 2002, Appl. Phys. Lett., 81, 4040, 10.1063/1.1523153 Jiménez, 2000, J. Phys. D: Appl. Phys., 33, 1525, 10.1088/0022-3727/33/12/315 Porokhonskyy, 2009, Appl. Phys. Lett., 94, 212906, 10.1063/1.3147166 Nam, 2000, Thin Solid Films, 371, 264, 10.1016/S0040-6090(00)00970-6 Haccart, 2002, Semicond. Phys., Quantum Electron. Optoelectron., 5, 78, 10.15407/spqeo5.01.078 Hsu, 2004, Sens. Actuators A, 116, 369, 10.1016/j.sna.2004.05.024 Kanda, 2009, J. Micromech. Syst., 18, 610, 10.1109/JMEMS.2009.2015478 Thomas, 2002, Mater. Sci. Eng., B95, 36, 10.1016/S0921-5107(02)00161-7 Zhou, 1997, J. Appl. Phys., 82, 3081, 10.1063/1.366147 Dai, 2004, Mater. Sci. Eng. A, 384, 57, 10.1016/j.msea.2004.05.067 Bi, 2007, J. Phys.: Conf. Ser., 61, 120, 10.1088/1742-6596/61/1/025 Cagin, 2007, J. Phys. D: Appl. Phys., 40, 2430, 10.1088/0022-3727/40/8/003 Fukami, 1985, Jpn. J. Appl. Phys., 24, 632, 10.1143/JJAP.24.632 Zheng, 1996, Sci. China Ser. E: Technol. Sci., 40, 126, 10.1007/BF02916944