Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

Springer Science and Business Media LLC - 2001
Kyu–Hwan Shim1, Mun Cheol Paek1, B.T. Lee2, C. Kim3, JeongWoo Kang1
1SiGe Device Team, Microelectronics Technology Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Korea, KR
2Department of Materials Science and Engineering, Chonnam National University, Korea, KR
3LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137-724, Korea, , KR

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