MRS Symposia Proceedings No. 256, 283, 358, 452, 486, Materials Research Society, Pittsburgh, 1992, 1993, 1995, 1997, 1998, respectively.
M. Stuzmann, J. Weber, M.S. Brandt, H.D. Fuchs, M. Rosenbauer, P. Deak, A. Hopner, A. Breitschwerdt, in: U. Rossler (Ed.), Festkörperprobleme/Advances in Solid State Physics, Vol. 32, Vieweg, Braunschweig, 1992, p. 179.
Zhe Chuan Feng, R. Tsu (Eds.), Porous Silicon, World Scientific, New York, 1995.
Setzu, 1999, J. Lumin., 80, 129, 10.1016/S0022-2313(98)00081-7
A. Halimaoui, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 12.
Givant, 1998, Appl. Phys. Lett., 73, 3150, 10.1063/1.122702
Foll, 1991, Appl. Phys. A, 53, 8, 10.1007/BF00323428
Beale, 1985, J. Crystal Growth, 73, 622, 10.1016/0022-0248(85)90029-6
R.L. Smith, S.D. Collins, J. Appl. Phys. 71 (1992) R1.
Pickering, 1984, J. Phys. C, 17, 6535, 10.1088/0022-3719/17/35/020
Eddowes, 1990, J. Electroanal. Chem., 280, 297, 10.1016/0022-0728(90)87005-5
Lehmann, 1990, J. Electrochem. Soc., 137, 653, 10.1149/1.2086525
Lehmann, 1991, Appl. Phys. Lett., 58, 856, 10.1063/1.104512
Venkateswara, 1991, J. Electrochem. Soc., 138, 153, 10.1149/1.2085526
Peter, 1989, Phys. Rev. Lett., 62, 308, 10.1103/PhysRevLett.62.308
Smith, 1988, J. Electron. Mater., 138, 533, 10.1007/BF02652104
U. Gösele, V. Lehmann, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 17.
Mizuno, 1996, Appl. Phys. Lett., 69, 3779, 10.1063/1.116996
Higa, 1996, Jpn. J. Appl. Phys., 35, 6648, 10.1143/JJAP.35.6648
Ligeon, 1989, J. Appl. Phys., 66, 3814, 10.1063/1.344044
Cullis, 1997, J. Appl. Phys., 82, 909, 10.1063/1.366536
Lehmann, 1997, Thin Solid Films, 297, 13, 10.1016/S0040-6090(96)09478-3
M. Christophersen, J. Carstensen, A. Feuerhake, H. Foll, Mater. Sci. Eng. B 69–70 (2000) 37.
Lehmann, 1993, Jpn. J. Appl. Phys., 32, 2095, 10.1143/JJAP.32.2095
Propst, 1994, J. Electrochem. Soc., 141, 1006, 10.1149/1.2054832
Ponomarev, 1998, J. Electrochem. Soc. Lett., 1, 1002
Wehrspohn, 1998, J. Electrochem. Soc., 145, 2958, 10.1149/1.1838744
Gruning, 1995, Thin Solid Films, 255, 135, 10.1016/0040-6090(94)05638-T
Canham, 1994, Nature, 368, 133, 10.1038/368133a0
D. Bellet, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 38.
Bsiesy, 1991, J. Electrochem. Soc., 138, 3450, 10.1149/1.2085432
Pavesi, 1997, La Rivista del Nuovo Cimento, 20, 1, 10.1007/BF02877374
Pavesi, 1999, J. Lumin., 80, 43, 10.1016/S0022-2313(98)00069-6
Berger, 1995, Mater. Res. Soc. Symp. Proc., 358, 327, 10.1557/PROC-358-327
Berger, 1994, J. Phys. D, 27, 1333, 10.1088/0022-3727/27/6/035
Mazzoleni, 1995, Appl. Phys. Lett., 67, 2983, 10.1063/1.114833
Lerondel, 1997, Appl. Phys Lett., 71, 196, 10.1063/1.119498
P. Buseck, J. Cowley, Le Roy Eyring, High Resolution Transmission Electron Microscopy and Associated Techniques, Oxford Science Publications, Oxford, 1992.
Noguchi, 1992, Jpn. J. Appl. Phys., 31, 1490, 10.1143/JJAP.31.L490
Xie, 1992, J. Appl. Phys., 71, 2403, 10.1063/1.351097
Cullis, 1991, Nature, 353, 335, 10.1038/353335a0
A.G. Cullis, L.T. Canham, O.D. Dosser, in: S.S. Iyer, R.T. Collins, L.T. Canham (Eds.), Light Emission from Silicon, Materials Research Society, Pittsburgh, 1992, p. 7.
Cullis, 1994, J. Appl. Phys., 75, 493, 10.1063/1.355827
Chuang, 1989, Appl. Phys. Lett., 55, 1540, 10.1063/1.102239
Herino, 1984, Mater. Lett., 2, 519, 10.1016/0167-577X(84)90086-7
Bomchil, 1988, Microelectron. Eng., 8, 293, 10.1016/0167-9317(88)90022-6
Cole, 1992, Appl. Phys. Lett., 60, 2800, 10.1063/1.106832
Jung, 1992, J. Electrochem. Soc., 139, 3363, 10.1149/1.2069079
Lehmann, 1992, Adv. Mater., 4, 762, 10.1002/adma.19920041115
Nakajima, 1993, Appl. Phys. Lett., 62, 2631, 10.1063/1.109268
Teschke, 1993, Appl. Phys. Lett., 63, 1348, 10.1063/1.109673
Teschke, 1993, Appl. Phys. Lett., 63, 1927, 10.1063/1.110651
Berbezier, 1993, J. Appl. Phys., 74, 5421, 10.1063/1.354248
I. Berbezier, in: J.-C. Vial, J. Derrien (Eds.), Porous Silicon Science and Technology, Les Editions de Physique, Paris, 1995, p. 207.
A. Halimaoui, in: J.-C. Vial, J. Derrien (Eds.), Porous Silicon Science and Technology, Les Editions de Physique, Paris, 1995, p. 33.
Albu-Yaron, 1994, J. Phys. I, 4, 1181, 10.1051/jp1:1994248
Gardelis, 1995, J. Electrochem. Soc., 142, 2094, 10.1149/1.2044247
A. Grosman, C. Ortega, Y.S. Wang, M. Gandais, in: G. Amato, C. Delerue, H.-J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Gordon and Breach, Amsterdam, 1997.
J.P. Gonchond, A. Halimaoui, K. Ogura, in: A.G. Cullis, N.J. Long (Eds.), Microscopy of Semiconducting Materials, IOP Publishing, Bristol, 1991.
Amato, 1996, Mater. Lett., 26, 295, 10.1016/0167-577X(95)00244-8
Amato, 1997, Thin Solid Films, 297, 73, 10.1016/S0040-6090(96)09412-6
Bruska, 1997, Thin Solid Films, 297, 79, 10.1016/S0040-6090(96)09417-5
Yamani, 1999, J. Appl. Phys., 85, 8050, 10.1063/1.370641
Gomez-Rodriguez, 1990, Appl. Surf. Sci., 44, 185, 10.1016/0169-4332(90)90049-6
Amisola, 1992, Appl. Phys. Lett., 61, 2595, 10.1063/1.108138
Yu, 1994, J. Vacuum Sci. Technol. B, 12, 2437, 10.1116/1.587778
Tsai, 1992, J. Electron. Mater., 21, 995, 10.1007/BF02684209
Coffer, 1993, J. Appl. Phys., 74, 2094, 10.1063/1.354754
Ettedgui, 1993, Mater. Res. Soc., 283, 173, 10.1557/PROC-283-173
Lee, 1994, J. Appl. Phys., 75, 8060, 10.1063/1.356547
Ruisz, 1994, J. Vacuum Sci. Technol. A, 12, 2565, 10.1116/1.579058
Fauchet, 1994, SPIE Proc., 2141, 155, 10.1117/12.176849
Schwall, 1997, Philos. Mag. B, 75, 887, 10.1080/13642819708205714
Dumas, 1993, Europhys. Lett., 23, 197, 10.1209/0295-5075/23/3/007
Pavlov, 1997, Thin Solid Films, 297, 132, 10.1016/S0040-6090(96)09427-8
R. Laiho, A. Pavlov, Phys. Rev. B 51 (1995) R14774.
Laiho, 1997, Thin Solid Films, 297, 138, 10.1016/S0040-6090(96)09530-2
E. zur Mühlen, H. Niehus, Phys. Stat. Sol. (b) 190 (1995) 21.
Teschke, 1996, Appl. Phys. Lett., 68, 2129, 10.1063/1.115607
Mauckner, 1993, J. Lumin., 57, 211, 10.1016/0022-2313(93)90135-A
Enachescu, 1994, J. Vacuum Sci. Technol. B, 12, 2074, 10.1116/1.587708
Tao, 1994, J. Vacuum Sci. Technol. B, 12, 2437, 10.1116/1.587791
Dumas, 1994, J. Vacuum Sci. Technol. B, 12, 2064, 10.1116/1.587705
Dumas, 1994, J. Vacuum Sci. Technol. B, 12, 2067, 10.1116/1.587706
Enachescu, 1996, J. Appl. Phys., 79, 2948, 10.1063/1.361291
Ito, 1995, Appl. Phys. Lett., 67, 2536, 10.1063/1.114450
Wu, 1999, Appl. Phys. Lett., 74, 3842, 10.1063/1.124198
Labunov, 1986, Thin Solid Films, 137, 123, 10.1016/0040-6090(86)90200-2
V. Labunov, V. Bondarenko, V.E. Borisenko, A. Dorofee, Phys. Stat. Sol. (a) 102 (1987) 193.
Barla, 1984, J. Crystal Growth, 68, 721, 10.1016/0022-0248(84)90110-6
Barla, 1984, J. Crystal Growth, 68, 727, 10.1016/0022-0248(84)90111-8
Bellet, 1996, Thin Solid Films, 276, 1, 10.1016/0040-6090(95)08035-X
H. Sugiyama, O. Nittono, Jpn. J. Appl. Phys. 28 (1989) 12013.
Sugiyama, 1990, J. Crystal Growth, 103, 156, 10.1016/0022-0248(90)90184-M
Buttard, 1996, J. Appl. Phys., 79, 8060, 10.1063/1.362360
Young, 1985, Appl. Phys. Lett., 46, 1133, 10.1063/1.95733
Kim, 1991, J. Appl. Phys., 69, 2201, 10.1063/1.348750
Itoh, 1991, Physica B, 170, 535, 10.1016/0921-4526(91)90172-B
Vezin, 1991, J. Appl. Crystallogr., 24, 581, 10.1107/S0021889891001085
A. Naudon. P. Goudeau, V. Vezin, in: J.-C. Vial, J. Derrien (Eds.), Porous Silicon Science and Technology, Les Editions de Physique, Paris, 1995, p. 255.
B.K. Teo, D.C. Joy, EXFAS Spectroscopy and Related Techniques, Plenum Press, New York, 1981.
J. Stöhr, NEXAFS Spectroscopy, Springer, Berlin, 1992.
J. Stöhr, in: D.C. Koningsberger, R. Prins (Eds.), X-ray Absorption: Principles, Applications, Techniques of SEXAFS and XANES, Vol. 92, Wiley, New York, 1988, p. 443.
M. De Crescenzi, M.N. Piancastelli, Electron Scattering and Related Spectroscopies, World Scientific, Singapore, 1996.
Dalba, 1995, Nucl. Instr. and Meth. B, 97, 322, 10.1016/0168-583X(94)00407-2
Schuppler, 1994, Phys. Rev. Lett., 72, 2648, 10.1103/PhysRevLett.72.2648
Schuppler, 1995, Phys. Rev. B, 52, 4910, 10.1103/PhysRevB.52.4910
van Buuren, 1992, Appl. Phys. Lett., 60, 3013, 10.1063/1.106793
van Buuren, 1994, Phys. Rev. B, 50, 2719, 10.1103/PhysRevB.50.2719
Dahn, 1994, J. Appl. Phys., 75, 1946, 10.1063/1.356342
Zhang, 1996, J. Appl. Phys., 79, 1351, 10.1063/1.361032
Bayliss, 1994, Solid State Commun., 91, 371, 10.1016/0038-1098(94)90636-X
Sham, 1993, Nature, 363, 331, 10.1038/363331a0
Gardelis, 1996, Appl. Surf. Sci., 102, 408, 10.1016/0169-4332(96)00088-8
Jang, 1993, J. Appl. Phys., 74, 6335, 10.1063/1.355156
R.F. Pettifer, A. Glanfield, S. Gardelis, B. Hamilton, P. Dawso, A.D. Smith, Physica B 208/209 (1995) 484.
Dalba, 1999, J. Lumin., 80, 103, 10.1016/S0022-2313(98)00083-0
Dalba, 1999, Appl. Phys. Lett., 74, 1454, 10.1063/1.123579
G. Dalba, N. Daldosso, P. Fornasini, R. Graziola, R. Grisenti, F. Rocca, J. Non-Cryst. Solids 232–234 (1998) 232.
G. Mariotto, F. Ziglio, F.L. Freire Jr., J. Non-Cryst. Solids 192/193 (1995) 253.
Richter, 1981, Solid State Commun., 39, 625, 10.1016/0038-1098(81)90337-9
Campbell, 1986, Solid State Commun., 58, 739, 10.1016/0038-1098(86)90513-2
N. Daldosso, F. Rocca, G. Dalba, P. Fornasini, R. Grisenti, J. Porous Mater. 7 (1999) 169.
Bomchil, 1983, J. Electrochem. Soc., 130, 1611, 10.1149/1.2120044
R. Herino, in: Zhe Chuan Feng, R. Tsu (Eds.), Porous Silicon, World Scientific, New York, 1995, p. 89.
Braunauer, 1938, J. Am. Chem. Soc., 60, 309, 10.1021/ja01269a023
Barrett, 1951, J. Am. Chem. Soc., 73, 373, 10.1021/ja01145a126
Borghesi, 1993, Solid State Commun., 87, 1, 10.1016/0038-1098(93)90524-Q
A. Grosman, C. Ortega, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 145.
Hadj Zoubir, 1994, Appl. Phys. Lett., 65, 82, 10.1063/1.113082
Canham, 1991, J. Appl. Phys., 70, 422, 10.1063/1.350293
Banerjiee, 1994, Phys. Rev. B, 49, 2915, 10.1103/PhysRevB.49.2915
Petit, 1997, Appl. Phys. Lett., 70, 191, 10.1063/1.118382
Ortega, 1990, Nucl. Instr. and Meth. B, 45, 622, 10.1016/0168-583X(90)90913-F
Calliari, 1993, J. Lumin., 57, 83, 10.1016/0022-2313(93)90111-Y
von Bardeleben, 1993, Phys. Rev. B, 47, 10889, 10.1103/PhysRevB.47.10899
Pivac, 1994, Appl. Phys. Lett., 65, 3260, 10.1063/1.112430
Loni, 1994, J. Appl. Phys., 76, 2825, 10.1063/1.357517
L. Pavesi, G. Mariotto, O. Bisi, M. Anderle, L. Calliari, in: Physical Concepts and Materials for Novel Optoelectronic Device Applications II, SPIE, Vol. 1985, 1993, p. 632.
L.T. Canham, in: D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993, p. 81.
L.T. Canham, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 158, and references therein.
Nakajima, 1992, Appl. Phys. Lett., 61, 46, 10.1063/1.107663
Hou, 1992, Appl. Phys. Lett., 62, 1097, 10.1063/1.108753
Giaddui, 1996, J. Phys. D, 29, 1580, 10.1088/0022-3727/29/6/025
Dattagupta, 1995, Mater. Res. Soc. Symp. Proc., 358, 381, 10.1557/PROC-358-381
Dillon, 1992, J. Electrochem. Soc., 139, 537, 10.1149/1.2069252
Glass, 1995, Mater. Res. Soc. Symp. Proc., 358, 537
Lee, 1995, Mater. Res. Soc. Symp. Proc., 358, 387, 10.1557/PROC-358-387
Kim, 1997, J. Am. Chem. Soc., 119, 2297, 10.1021/ja963540y
Li, 1994, J. Electron. Mater., 23, 409, 10.1007/BF02671222
Buriak, 1999, J. Lumin., 80, 29, 10.1016/S0022-2313(98)00067-2
von Behren, 1998, Solid State Commun., 105, 317, 10.1016/S0038-1098(97)10099-0
S. Eisebitt, J.E. Rubensson, J. Lüning, W. Eberhardt, T. van Buuren, T. Tjedje, in: D.J. Lockwood (Ed.), The Physics of Semiconductors, World Scientific, Singapore, 1995, p. 2133.
W. Theiss, M. Arntzen, S. Hilbrich, M. Wernke, R. Arens-Fischer, M.G. Berger, Phys. Stat. Sol. (a) 90 (1995) 15.
H. Münder, in: Zhe Chuan Feng, R. Tsu (Eds.), Porous Silicon, World Scientific, New York, 1995, p. 277.
Suda, 1994, Jpn. J. Appl. Phys., 33, 581, 10.1143/JJAP.33.581
Suda, 1998, Phys. Rev. Lett., 80, 3559, 10.1103/PhysRevLett.80.3559
Rehm, 1996, J. Am. Chem. Soc., 118, 4490, 10.1021/ja9538795
Ben-Chorin, 1996, Phys. Rev. Lett., 77, 763, 10.1103/PhysRevLett.77.763
Johansson, 1990, Phys. Rev. B, 42, 8901
Yu.E. Lozovik, A.V. Klyuchnik, Collective oscillations in inhomogeneous systems, in: L.V. Keldysh, D.A. Kirzhnitz, A.A. Maradudin (Eds.), The Dielectric Function of Condensed Systems, North-Holland, Amsterdam, 1989.
Ugarte, 1989, Z. Phys. D, 12, 333, 10.1007/BF01426967
Berbezier, 1996, Appl. Surf. Sci., 102, 417, 10.1016/0169-4332(96)00090-6
Massomi Sassaki, 1996, Appl. Phys. Lett., 69, 206, 10.1063/1.117373
N. Mannella, F. Parmigiani, L. Pavesi, C. Bertarini, S. Ossicini, O. Bisi, private communication.
Koshida, 1993, Appl. Phys. Lett., 63, 2774, 10.1063/1.110330
Rossow, 1996, Appl. Surf. Sci., 102, 413, 10.1016/0169-4332(96)00089-X
Theiss, 1997, Surf. Sci. Rep., 29, 91, 10.1016/S0167-5729(96)00012-X
C. Pickering, in: Zhe Chuan Feng, R. Tsu (Eds.), Porous Silicon, World Scientific, New York, 1995, p. 3.
Maxwell-Garnett, 1904, Philos. Trans. R. Soc. London, 203, 385, 10.1098/rsta.1904.0024
Bruggemann, 1925, Ann. Phys., 24, 636
Looyenga, 1965, Physica, 31, 401, 10.1016/0031-8914(65)90045-5
Grivickas, 1993, Thin Solid Films, 235, 234, 10.1016/0040-6090(93)90271-P
Kanemitsu, 1993, Phys. Rev. B, 48, 2827, 10.1103/PhysRevB.48.2827
Xie, 1994, Phys. Rev. B, 49, 5386, 10.1103/PhysRevB.49.5386
Sagnez, 1993, Appl. Phys. Lett., 62, 1155, 10.1063/1.108773
Kux, 1995, Phys. Rev. B, 51, 17535, 10.1103/PhysRevB.51.17535
Vincent, 1993, J. Lumin., 57, 217, 10.1016/0022-2313(93)90136-B
Chan, 1996, J. Appl. Phys., 79, 3273, 10.1063/1.361216
Kovalev, 1996, J. Appl. Phys., 80, 5978, 10.1063/1.363595
Trojánek, 1995, Thin Solid Films, 255, 77, 10.1016/0040-6090(94)05610-P
I. Pelant, A. Fejfar, J. Kocka, in: G. Amato, C. Delerue, H.-J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Gordon and Breach, Amsterdam, 1997, p. 253.
J.M. Ryan, P.R. Wamsley, K.L. Bray, J. Lumin. 60/61 (1994) 487.
P.D.J. Calcott, K.J. Nash, L.T. Canham, M.J. Kane, T. Brumhead, J. Phys. 5 (1993) L91.
Yeh, 1994, Phys. Rev. B, 50, 14405, 10.1103/PhysRevB.50.14405
T. Matsumoto, O.B. Wright, T. Futagi, H. Mimura, Y. Kanemitsu, J. Non-Cryst. Solids 164–166 (1993) 953.
Bugayev, 1994, Opt. Commun., 106, 65, 10.1016/0030-4018(94)90058-2
Klimov, 1994, Appl. Phys. Lett., 64, 2691, 10.1063/1.111493
Klimov, 1995, Phys. Rev. B, 52, 1247, 10.1103/PhysRevB.52.4728
Malý, 1994, Solid State Commun., 89, 709, 10.1016/0038-1098(94)90582-7
Malý, 1996, Thin Solid Films, 276, 84, 10.1016/0040-6090(95)08090-2
Grivickas, 1995, Mater. Res. Soc. Symp. Proc., 358, 543, 10.1557/PROC-358-543
Moniatte, 1997, Thin Solid Films, 297, 135, 10.1016/S0040-6090(96)09535-1
Yajima, 1978, Phys. Rev. A, 17, 324, 10.1103/PhysRevA.17.324
Yajima, 1978, Phys. Rev. A, 17, 309, 10.1103/PhysRevA.17.309
M. Sheik Bahae, A.A. Said, T.H. Wey, D.J. Hagan, E.W. van Stryland, IEEE J. Quantum Electron. QE-26 (1990) 760.
Henari, 1995, Appl. Phys. Lett., 67, 323, 10.1063/1.115432
Wang, 1992, Phys. Rev. Lett., 69, 3252, 10.1103/PhysRevLett.69.3252
Wang, 1993, Phys. Rev. B, 48, 5653, 10.1103/PhysRevB.48.5653
Zhang, 1993, Phys. Rev. B, 48, 11204, 10.1103/PhysRevB.48.11204
van de Walle, 1993, Phys. Rev. Lett., 70, 1116, 10.1103/PhysRevLett.70.1116
Zhang, 1993, Appl. Phys. Lett., 63, 1399, 10.1063/1.109689
S. Ossicini, A. Fasolino, F. Bernardini, in: D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993, p. 244.
Ossicini, 1994, Phys. Rev. Lett., 72, 1044, 10.1103/PhysRevLett.72.1044
F. Bernardini, S. Ossicini, A. Fasolino, Surf. Sci. 307–309 (1994) 984.
S. Ossicini, A. Fasolino, F. Bernardini, Phys. Stat. Sol. (b) 190 (1995) 117.
Lee, 1995, Phys. Rev. B, 51, 1762, 10.1103/PhysRevB.51.1762
Delley, 1995, Appl. Phys. Lett., 67, 2370, 10.1063/1.114348
Zunger, 1996, Appl. Surf. Sci., 102, 350, 10.1016/0169-4332(96)00078-5
Ke, 1997, Phys. Rev. B, 55, 5124, 10.1103/PhysRevB.55.5124
S. Ossicini, Phys. Stat. Sol. (a) 170 (1998) 377.
Degoli, 1998, Phys. Rev B, 57, 14776, 10.1103/PhysRevB.57.14776
Degoli, 1999, J. Lumin., 80, 411, 10.1016/S0022-2313(98)00139-2
E. Degoli, S. Ossicini, D. Barbato, M. Luppi, E. Pettenati, Mater. Sci. Eng. B 69–70 (2000) 311.
Ren, 1992, Phys. Rev. B, 45, 6492, 10.1103/PhysRevB.45.6492
Sanders, 1992, Phys. Rev. B, 45, 9202, 10.1103/PhysRevB.45.9202
Read, 1992, Phys. Rev. Lett., 69, 1232, 10.1103/PhysRevLett.69.1232
Buda, 1992, Phys. Rev. Lett., 69, 1272, 10.1103/PhysRevLett.69.1272
Ohno, 1992, Phys. Rev. Lett., 69, 2400, 10.1103/PhysRevLett.69.2400
Hybertsen, 1993, Phys. Rev. B, 48, 4608, 10.1103/PhysRevB.48.4608
Xia, 1993, Phys. Rev. B, 48, 5179, 10.1103/PhysRevB.48.5179
Yeh, 1993, Appl. Phys. Lett., 63, 3455, 10.1063/1.110118
Delerue, 1993, Phys. Rev. B, 48, 11024, 10.1103/PhysRevB.48.11024
Mintmire, 1993, J. Vacuum Sci. Technol. A, 11, 1733, 10.1116/1.578487
Polatoglou, 1993, J. Lumin., 57, 117, 10.1016/0022-2313(93)90117-6
Saitta, 1996, Phys. Rev. B, 53, 1446, 10.1103/PhysRevB.53.1446
Filonov, 1995, Appl. Phys. Lett., 67, 1090, 10.1063/1.114458
Ossicini, 1996, Appl. Surf. Sci., 102, 395, 10.1016/0169-4332(96)00085-2
Dorigoni, 1996, Phys. Rev. B, 53, 4557, 10.1103/PhysRevB.53.4557
Dorigoni, 1996, Thin Solid Films, 276, 244, 10.1016/0040-6090(95)08063-5
Dorigoni, 1996, Thin Solid Films, 276, 261, 10.1016/0040-6090(95)08091-0
Lugo, 1997, J. Appl. Phys., 81, 1923, 10.1063/1.364047
Xue, 1997, J. Appl. Phys., 81, 3175, 10.1063/1.364146
Ossicini, 1997, Thin Solid Films, 297, 154, 10.1016/S0040-6090(96)09442-4
S. Ossicini, M. Biagini, C.M. Bertoni, G. Roma, O. Bisi, in: R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimaola, A.P. Alivisatos (Eds.), Advances in Microcrystalline and Nanocrystalline Semiconductors; MRS Symp. Proc. 452 (1997) 63.
Ossicini, 1997, Solid State Phenom., 54, 127, 10.4028/www.scientific.net/SSP.54.127
T.C. Tigelis, J.P. Xanthaxis, J.L. Vomvoridis, Phys. Stat. Sol. (a) 65 (1998) 125.
S. Ossicini, E. Degoli, D. Barbato, M. Luppi, E. Pettenati, in: V. Borisenko, A.B. Filonov, S.V. Gaponenko, V.S. Gurin (Eds.), Physics, Chemistry and Applications of Nanostructures, World Scientific, Singapore, 1999, p. 3.
Shum, 1991, J. Appl. Phys., 69, 6484, 10.1063/1.348855
Kayanuma, 1991, Phys. Rev. B, 44, 13085, 10.1103/PhysRevB.44.13085
Takagahara, 1992, Phys. Rev. B, 46, 15578, 10.1103/PhysRevB.46.15578
Hybertsen, 1992, Mater. Res. Soc. Proc., 256, 179, 10.1557/PROC-256-179
F. Koch, V. Petrova-Koch, T. Muschik, A. Kux, F. Müller, V. Gavrilenko, F. Möller, in: Ping Yang, Hou-Zhi Zheng (Eds.), The Physics of Semiconductors, World Scientific, Singapore, 1992, p. 1483.
Proot, 1992, Appl. Phys. Lett., 61, 1948, 10.1063/1.108372
Deak, 1992, Phys. Rev. Lett., 69, 2531, 10.1103/PhysRevLett.69.2531
Hirao, 1993, Mater. Res. Soc. Symp. Proc., 283, 425, 10.1557/PROC-283-425
Delley, 1993, Phys. Rev. B, 47, 1397, 10.1103/PhysRevB.47.1397
Zhong, 1993, J. Non-Cryst. Solids, 164, 969, 10.1016/0022-3093(93)91159-Z
Fishman, 1993, Phys. Rev. B, 48, 1464, 10.1103/PhysRevB.48.1464
Huaxiang, 1993, Phys. Rev. B, 48, 10978, 10.1103/PhysRevB.48.10978
Tsu, 1993, Mater. Res. Soc. Symp. Proc., 283, 437, 10.1557/PROC-283-437
R. Tsu, D. Babic, in: D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993, p. 203.
Tsu, 1994, Appl. Phys. Lett., 64, 1806, 10.1063/1.111788
Allan, 1993, Phys. Rev. B, 48, 7951, 10.1103/PhysRevB.48.7951
Hirao, 1994, Surf. Sci., 306, 87, 10.1016/0039-6028(94)91188-6
John, 1994, Phys. Rev. B, 50, 5329, 10.1103/PhysRevB.50.5329
Hybertsen, 1994, Phys. Rev. Lett., 72, 1514, 10.1103/PhysRevLett.72.1514
Kumar, 1994, Jpn. J. Appl. Phys., 33, 909, 10.1143/JJAP.33.909
Delerue, 1994, Phys. Rev. B, 50, 18258, 10.1103/PhysRevB.50.18258
Wang, 1994, Phys. Rev. Lett., 73, 1039, 10.1103/PhysRevLett.73.1039
Wang, 1994, J. Phys. Chem., 98, 2158, 10.1021/j100059a032
N.H. Hill, K.B. Whaley, Phys. Rev. Lett. 75 (1995) 1130.
Allan, 1996, Phys. Rev. Lett., 76, 2961, 10.1103/PhysRevLett.76.2961
Delerue, 1996, Phys. Rev. Lett., 76, 3038, 10.1103/PhysRevLett.76.3038
Baierle, 1997, Solid State Commun., 102, 545, 10.1016/S0038-1098(97)00042-2
M.J. Caldas, R.J. Baierle, E. Molinari, S. Ossicini, Mater. Sci. Forum 258–263 (1997) 11.
Filonov, 1997, Appl. Phys. Lett., 70, 744, 10.1063/1.118267
A.B. Filonov, A.N. Kholod, V.E. Borisenko, Phys. Stat. Sol. (a) 165 (1998) 57.
Franceschetti, 1997, Phys. Rev. Lett., 78, 915, 10.1103/PhysRevLett.78.915
Allan, 1997, Phys. Rev. Lett., 78, 3161, 10.1103/PhysRevLett.78.3161
Wolkin, 1999, Phys. Rev. Lett., 82, 197, 10.1103/PhysRevLett.82.197
Delerue, 1999, J. Lumin., 80, 65, 10.1016/S0022-2313(98)00071-4
S. Ossicini, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 207.
S. Ossicini, O. Bisi, in: G. Amato, C. Delerue, H.-J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Gordon and Breach, Amsterdam, 1997, p. 227.
S. Ossicini, E. Degoli, in: O. Bisi, S.U. Campisano, L. Pavesi, F. Priolo (Eds.), Silicon-based Microphotonics: from Basics to Applications, IOS Press, Amsterdam, 1999, p. 191.
Starukhin, 1992, Sov. Technol. Phys. Lett., 18, 535
Andrianov, 1993, JETP Lett., 58, 427
Koyama, 1995, Phys. Rev. B, 52, 2649, 10.1103/PhysRevB.52.2649
Henry, 1970, Phys. Rev. B, 1, 1628, 10.1103/PhysRevB.1.1628
A. Kux, D. Hoffman, in: D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993, p. 197.
B. Hamilton, S. Gardelis, in: D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993, p. 35.
Gardelis, 1994, J. Appl. Phys., 76, 5327, 10.1063/1.357184
K.J. Nash, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 216.
M. Luppi, S. Ossicini, J. Porous Silicon, in press.
O. Bisi, C. Bertarini, in: O. Bisi, S.U. Campisano, L. Pavesi, F. Priolo (Eds.), Silicon-based Microphotonics: from Basics to Applications, IOS Press, Amsterdam, 1999, p. 261.
M. Lannoo, G. Allan, C. Delerue, in: G. Amato, C. Delerue, H.-J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Gordon and Breach, Amsterdam, 1997, p. 187.
C. Delerue, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 212.
Rama Krishna, 1991, Phys. Rev. Lett., 67, 629, 10.1103/PhysRevLett.67.629
Fauchet, 1999, J. Lumin., 80, 53, 10.1016/S0022-2313(98)00070-2
P.M. Fauchet, J. von Behren, Phys. Stat. Sol. (b) 204 (1997) R7.
Canham, 1990, Appl. Phys. Lett., 57, 1046, 10.1063/1.103561
Lehmann, 1992, Mater. Res. Soc. Symp. Proc., 256, 3, 10.1557/PROC-256-3
Credo, 1999, Appl. Phys. Lett., 74, 1978, 10.1063/1.123719
Diener, 1999, Appl. Phys. Lett., 74, 3350, 10.1063/1.123341
Calcott, 1993, J. Lumin., 57, 257, 10.1016/0022-2313(93)90144-C
Kovalev, 1998, Phys. Rev. Lett., 81, 2803, 10.1103/PhysRevLett.81.2803
Kovalev, 1996, Thin Solid Films, 276, 120, 10.1016/0040-6090(95)08074-0
Koch, 1996, J. Lumin., 70, 320, 10.1016/0022-2313(96)00067-1
Mihalcescu, 1995, Phys. Rev. B, 51, 17605, 10.1103/PhysRevB.51.17605
Kovalev, 1998, Phys. Rev. B, 57, 3741, 10.1103/PhysRevB.57.3741
Tsybeskov, 1994, Phys. Rev. B, 49, 7821, 10.1103/PhysRevB.49.7821
Kux, 1995, Appl. Phys. Lett., 66, 49, 10.1063/1.114178
Koyama, 1998, J. Appl. Phys., 83, 1776, 10.1063/1.366899
Fauchet, 1993, Mater. Res. Soc. Symp. Proc., 298, 271, 10.1557/PROC-298-271
Koch, 1993, Mater. Res. Soc. Symp. Proc., 298, 319, 10.1557/PROC-298-319
L. Pavesi, Solid State Phenom. 44–46 (1995) 261.
Qin, 1993, Solid State Commun., 86, 559, 10.1016/0038-1098(93)90139-E
Xu, 1992, Appl. Phys. Lett., 60, 1375, 10.1063/1.107295
F. Koch, V. Petrova-Koch, T. Muschik, A. Nikolov, V. Gavrilenko, in: P.M. Fauchet et al. (Eds.), Microcrystalline Semiconductors: Materials Science and Devices, Materials Research Society, Pittsburgh, PA, p. 197.
Ookubo, 1992, Appl. Phys. Lett., 61, 940, 10.1063/1.107735
Pavesi, 1993, Phys Rev. B, 48, 17625, 10.1103/PhysRevB.48.17625
Koyama, 1995, Phys Rev. B, 52, 11562, 10.1103/PhysRevB.52.2649
Kanemitsu, 1993, Phys Rev. B, 48, 12357, 10.1103/PhysRevB.48.12357
Vial, 1992, Phys. Rev. B, 45, 14171, 10.1103/PhysRevB.45.14171
Mauckner, 1994, J. Appl. Phys., 75, 4167, 10.1063/1.355999
Pavesi, 1996, Solid State Commun., 97, 1051, 10.1016/0038-1098(95)00798-9
Eduardo Roman, 1996, J. Phys., 8, 5161
Tanaka, 1998, Appl. Phys. Lett., 73, 2334, 10.1063/1.122453
Mihalcescu, 1998, Phys. Rev. Lett., 80, 3392, 10.1103/PhysRevLett.80.3392
Canham, 1991, J. Appl. Phys., 70, 422, 10.1063/1.350293
Maruyama, 1994, Appl. Phys. Lett., 65, 1346, 10.1063/1.112047
Muller, 1993, J. Lumin., 57, 283, 10.1016/0022-2313(93)90146-E
Shih, 1992, Appl. Phys. Lett., 60, 633, 10.1063/1.106576
Petrova-Koch, 1992, Appl. Phys. Lett., 61, 943, 10.1063/1.107736
von Bardeleben, 1993, J. Lumin., 57, 301, 10.1016/0022-2313(93)90148-G
Tischler, 1992, Appl. Phys. Lett., 60, 639, 10.1063/1.106578
Petrov, 1994, Semiconductors, 28, 49
Czaputa, 1995, Thin Solid Films, 255, 212, 10.1016/0040-6090(94)05656-X
Li, 1996, Appl. Phys. Lett., 80, 5967
H. Yochomiki, A. Masuda, Y. Yonezawa, T. Shimizu, Thin Solid Films 281/282 (1996) 568.
Giaddui, 1998, J. Phys. D, 31, 1131, 10.1088/0022-3727/31/10/001
Zhang, 1998, Phys. Rev. Lett., 81, 1710, 10.1103/PhysRevLett.81.1710
Diligenti, 1996, Appl. Phys. Lett., 68, 687, 10.1063/1.116592
Tsu, 1994, Appl. Phys. Lett., 64, 1806, 10.1063/1.111788
Mares, 1993, Appl. Phys. Lett., 63, 180, 10.1063/1.110392
Astova, 1994, Semiconductors, 28, 302
Kocka, 1996, Thin Solid Films, 276, 187, 10.1016/0040-6090(95)08108-9
I. Balberg, Philos. Mag. (2000), in press.
Koyama, 1993, J. Lumin, 57, 293, 10.1016/0022-2313(93)90147-F
Ben-Chorin, 1993, J. Lumin., 57, 159, 10.1016/0022-2313(93)90125-7
Ben-Chorin, 1994, Phys. Rev. B, 49, 2981, 10.1103/PhysRevB.49.2981
M. Ben-Chorin, F. Möller, F. Koch, W. Schirmacher, M. Eberhard, Phys. Rev. B 51 (1995) 2199.
Zhang, 1995, J. Appl. Phys., 77, 5936, 10.1063/1.359550
Parkutik, 1996, Thin Solid Films, 276, 195, 10.1016/0040-6090(95)08110-0
Koshida, 1992, Appl. Phys. Lett., 60, 347, 10.1063/1.106652
Pavesi, 1994, J. Appl. Phys., 75, 1118, 10.1063/1.356495
Ben-Chorin, 1995, J. Appl. Phys., 77, 4482, 10.1063/1.359443
Pulsford, 1993, J. Lumin., 57, 181, 10.1016/0022-2313(93)90129-B
G. Giebel, L. Pavesi, Phys. Stat. Sol. (a) 151 (1995) 355.
G. Polisski, G. Dollinger, A. Bergmaier, D. Kovalev, H. Heckler, F. Koch, Phys. Stat. Sol. (a) 168 (1998) R1.
Peng, 1996, J. Appl. Phys., 80, 295, 10.1063/1.362783
Lubianiker, 1997, Phys. Rev. Lett., 78, 2433, 10.1103/PhysRevLett.78.2433
Bloom, 1999, Appl. Phys. Lett., 74, 1427, 10.1063/1.123571
Lalic, 1996, J. Appl. Phys., 80, 5971, 10.1063/1.363594
Lee, 1996, J. Non-Cryst. Solids, 198, 911, 10.1016/0022-3093(96)00082-8
G. Di Francia, V. La Ferrara, P. Maddalena, D. Ninno, L.P. Odierna, V. Cataudella, Il Nuovo Cimento 18 D (1996) 1187.
L. Pavesi et al., J. Appl. Phys. 86 (1999) 6474.
Peng, 1995, Appl. Phys. Lett., 67, 2515, 10.1063/1.114443
Lebedev, 1998, Phys. Rev. B, 57, 14607, 10.1103/PhysRevB.57.14607
Rao, 1997, Mater. Res. Soc. Symp. Proc., 452, 613, 10.1557/PROC-452-613
Odagaki, 1981, Phys. Rev. B, 24, 5284, 10.1103/PhysRevB.24.5284
E.H. Roman, L. Pavesi, private communication.
D. Stauffer, Introduction to Percolation Theory, Taylor and Francis, London, 1985.
S. Alexander, R.L. Orbach, J. Phys. 43 (1982) L625.
Nakayama, 1994, Rev. Mod. Phys., 66, 381, 10.1103/RevModPhys.66.381
Scher, 1973, Phys. Rev. B, 7, 4491, 10.1103/PhysRevB.7.4491
Cruz, 1998, J. Appl. Phys., 83, 7693, 10.1063/1.367940
Lampin, 1998, Phys. Rev. B, 58, 12044, 10.1103/PhysRevB.58.12044
N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, 2nd Edition, Clarendon Press, Oxford, 1979.
Everrett, 1998, J. Appl. Phys., 83, 326, 10.1063/1.366687
Canham, 1996, Appl. Surf. Sci., 102, 436, 10.1016/0169-4332(96)00094-3
J. Kramer, P. Seitz, E.F. Steigmeier, H. Auderset, B. Delley, H. Baltes, Sensors and Actuators A 37/38 (1993) 527.
Akil, 1998, Appl. Phys. Lett., 73, 871, 10.1063/1.121971
A. Bsiesy, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 283.
T.I. Cox, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 290.
Canham, 1992, Appl. Phys. Lett., 61, 2563, 10.1063/1.108127
Bsiesy, 1993, Phys. Rev. Lett., 71, 637, 10.1103/PhysRevLett.71.637
Halimaoui, 1991, Appl. Phys. Lett., 59, 304, 10.1063/1.105578
Bressers, 1992, Appl. Phys. Lett., 61, 108, 10.1063/1.108470
Halimaoui, 1993, Appl. Phys. Lett., 63, 1264, 10.1063/1.109752
Namavar, 1992, Appl. Phys. Lett., 60, 2514, 10.1063/1.106951
Steiner, 1996, Thin Solid Films, 276, 159, 10.1016/0040-6090(95)08079-1
Kozlowski, 1993, Thin Sol. Films, 276, 164, 10.1016/0040-6090(95)08080-5
K. Nishimura, Y. Nagao, N. Ikeda, Jpn. J. Appl. Phys. 36 (1997) L643.
S. Sen, J. Siejka, A. Savtchouk, J. Lagowski, Appl. Phys. Lett. 70 (1997) 2253.
Koshida, 1993, Appl. Phys. Lett., 63, 2655, 10.1063/1.110411
Li, 1994, Appl. Phys. Lett., 64, 2394, 10.1063/1.111625
Halliday, 1996, Thin Solid Films, 276, 299, 10.1016/0040-6090(95)08102-X
L. Shang, J. Electrochem. Soc. 143 (1996) L42.
Wakefield, 1997, Semicond. Sci. Technol., 12, 1304, 10.1088/0268-1242/12/10/019
K. Tada et al., Jpn. J. Appl. Phys. 36 (1997) L418.
Lazarouk, 1996, Appl. Phys. Lett., 68, 2108, 10.1063/1.115600
Balucani, 1998, Appl. Phys. Lett., 72, 639, 10.1063/1.120830
Gelloz, 1998, Appl. Phys. Lett., 73, 2021, 10.1063/1.122355
Lang, 1993, J. Lumin., 57, 341, 10.1016/0022-2313(93)90152-D
Steiner, 1993, Appl. Phys. Lett., 62, 2700, 10.1063/1.109236
Loni, 1995, Electron. Lett., 31, 1288, 10.1049/el:19950831
Linnros, 1995, Appl. Phys. Lett., 66, 3048, 10.1063/1.114273
Kesan, 1993, J. Vacuum Sci. Technol., 11, 1736, 10.1116/1.578416
Tsybeskov, 1996, Appl. Phys. Lett., 68, 2058, 10.1063/1.116302
Pavesi, 1997, Thin Solid Films, 297, 272, 10.1016/S0040-6090(96)09415-1
Chen, 1997, Jpn. J. Appl. Phys., 31, 1574, 10.1143/JJAP.36.1574
T. Futagi, T. Matsumoto, M. Katsuo, Y. Ohta, H. Mimura, K. Kitamura, Jpn. J. Appl. Phys. 31 (1992) L616.
Mimura, 1996, Appl. Surf. Sci., 92, 598, 10.1016/0169-4332(95)00302-9
Schubert, 1992, Appl. Phys. Lett., 60, 921, 10.1063/1.106489
Schubert, 1994, Science, 265, 943, 10.1126/science.265.5174.943
Selim Unlu, 1995, J. Appl. Phys., 78, 607, 10.1063/1.360322
Araki, 1996, Appl. Phys. Lett., 69, 2956, 10.1063/1.117742
M.-K. Lee, C.-C. Hu, Y.-H. Wang, Jpn. J. Appl. Phys. 35 (1996) L865.
Noguchi, 1994, Jpn. J. Appl. Phys., 33, 590, 10.1143/JJAP.33.590
Pavesi, 1994, Appl. Phys. Lett., 65, 2182, 10.1063/1.112755
Scmuki, 1998, Phys. Rev. Lett., 80, 4060, 10.1103/PhysRevLett.80.4060
Hirschman, 1996, Nature, 384, 338, 10.1038/384338a0
M.J. Sailor, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 364.
Zangooie, 1997, J. Electrochem. Soc., 144, 4027, 10.1149/1.1838130
Lauerhass, 1993, Science, 261, 1567, 10.1126/science.261.5128.1567
J.M. Lauerhaas, G.M. Credo, J. Heinrich, M.J. Sailor, J. Am. Chem. Soc. (USA) 114 (1992) 1911.
Schechter, 1995, Anal. Chem., 67, 3727, 10.1021/ac00116a018
Li, 1993, Appl. Phys. Lett., 62, 3192, 10.1063/1.109126
Coffer, 1996, J. Lumin., 70, 343, 10.1016/0022-2313(96)00069-5
Andsager, 1994, Appl. Phys. Lett., 64, 1141, 10.1063/1.110832
J.M. Lauerhass, G.M. Credo, J. Heinrich, M.J. Sailor, J. Am. Chem. Soc. (USA) 114 (1992) 1911.
Fellah, 1999, J. Lumin., 80, 109, 10.1016/S0022-2313(98)00077-5
H.A. MacLeod, Thin-film Optical Filters, Adam Hilger, London, 1969.
Cazzanelli, 1997, Phys. Rev. B, 56, 15264, 10.1103/PhysRevB.56.15264
Golovan, 1999, JEPT Lett., 69, 300
Zangooie, 1998, J. Vacuum Sci. Technol. A, 16, 2901, 10.1116/1.581438
Lin, 1997, Science, 278, 840, 10.1126/science.278.5339.840
V. Mulloni, C. Mazzoleni, L. Pavesi, Semiconductor Sci. Technol. 14 (1999) 1052.
Kruger, 1998, Opt. Commun., 146, 309, 10.1016/S0030-4018(97)00513-0
V. Mulloni, L. Pavesi, Mater. Sci. Eng. B 69–70 (2000) 59.
Arrand, 1998, IEEE J. Selected Topics Quantum Electron., 4, 975, 10.1109/2944.736088
Imai, 1981, Solid-State Electron., 24, 159, 10.1016/0038-1101(81)90012-5
Bondarenko, 1995, Microelectron. Eng., 28, 447, 10.1016/0167-9317(95)00094-O
Arrand, 1997, Electron. Lett., 33, 1724, 10.1049/el:19971144
A. Birner, U. Gruning, S. Ottow, A. Schneider, F. Muller, V. Lehmann, H. Foll, U. Gösele, Phys. Stat. Sol. (a) 165 (1998) 111.
L.T. Canham, in: L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997, p. 371.
Adami, 1994, Sensors and Actuators B, 18, 178, 10.1016/0925-4005(94)87080-2
Thust, 1996, Meas. Sci. Technol., 7, 26, 10.1088/0957-0233/7/1/003
Canham, 1995, Adv. Mater., 7, 1033, 10.1002/adma.19950071215
D.C. Benshael, L.T. Canham, S. Ossicini (Eds.), Optical Properties of Low Dimensional Silicon Structures, NATO ASI Series, Vol. 244, Kluwer Academic Publishers, Dordrecht, 1993.
Special issue, J. Lumin. 57 (1993) and 80 (1998).
Special issue, Thin Solid Films 255 (1995) and 297 (1997).
Buda, 1994, Prog. Quantum Electron., 18, 201, 10.1016/0079-6727(94)90001-9
R.L. Smith, S.D. Collins, J. Appl. Phys. 71 (1992) R1.
Jung, 1993, J. Electrochem. Soc., 140, 3046, 10.1149/1.2220955
L. Pavesi, in: Amorphous Hydrogenated Silicon, Solid State Phenomena, Part B 44–46 (1995) 261.
Kanemitsu, 1995, Phys. Rep., 263, 1, 10.1016/0370-1573(95)00021-4
John, 1995, Phys. Rep., 263, 93, 10.1016/0370-1573(95)00052-4
Pavesi, 1996, Microelectron. J., 27, 437, 10.1016/0026-2692(95)00067-4
Fauchet, 1996, J. Lumin., 70, 294, 10.1016/0022-2313(96)82860-2
Collins, 1997, Phys. Today, 50, 24, 10.1063/1.881650
Theiss, 1997, Surf. Sci. Rep., 29, 91, 10.1016/S0167-5729(96)00012-X
Cullis, 1997, J. Appl. Phys., 82, 909, 10.1063/1.366536
Pavesi, 1997, La Rivista del Nuovo Cimento, 20, 1, 10.1007/BF02877374
L. Pavesi, V. Mulloni, in: O. Bisi, S.U. Campisano, L. Pavesi, F. Priolo (Eds.), Silicon-Based Microphotonics: From Basics to Applications, IOS Press, Amsterdam, 1999, p. 87.
J.-C. Vial, J. Derrien (Eds.), Porous Silicon Science and Technology, Les Editions de Physique, Paris, 1995.
G. Amato, C. Delerue, H.-J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Gordon and Breach, Amsterdam, 1997.
L.T. Canham (Ed.), Properties of Porous Silicon, IEE INSPEC, The Institution of Electrical Engineers, London, 1997.
D.J. Lockwood (Ed.), Light Emission in Silicon: from Physics to Devices, Semiconductors and Semimetals, Vol. 49, Academic Press, London, 1998.
O. Bisi, S.U. Campisano, L. Pavesi, F. Priolo (Eds.), Silicon-Based Microphotonics: From Basics to Applications, IOS Press, Amsterdam, 1999.
Berger, 1995, Thin Solid Films, 255, 313, 10.1016/0040-6090(94)05617-M
B.K. Teo, EXAFS: Basic Principles and Data Analysis, Springer, Berlin, 1986.
Borghesi, 1994, Solid State Commun., 89, 615, 10.1016/0038-1098(94)90175-9
L. Pavesi, L. Calliari, E. Zanghellini, G. Mariotto, M. Anderle, O. Bisi, in: J.-C. Vial, J. Derrien (Eds.), Porous Silicon Science and Technology, Les Editions de Physique, Paris, 1995, p. 61.
Kux, 1995, Thin Solid Films, 255, 143, 10.1016/0040-6090(94)05640-Y
Sacilotti, 1993, Electron. Lett., 29, 790, 10.1049/el:19930528
Prokes, 1993, Appl. Phys. Lett., 62, 3244, 10.1063/1.109087
Ookubo, 1995, Phys Rev. B, 51, 17698, 10.1103/PhysRevB.51.17526
Pavesi, 1994, Phys Rev. B, 50, 2047, 10.1103/PhysRevB.50.2047.2
Pavesi, 1996, J. Appl., Phys.80, 216, 10.1063/1.362807
Mihalcescu, 1993, J. Lumin., 57, 111, 10.1016/0022-2313(93)90116-5
W. Schirmacher, M. Ben-Chorin, F. Möller, F. Koch, Proceedings of the Sixth International Conference on Hopping and Related Phenomena, Jerusalem, 27–30 August 1995.
B. Gelloz, T. Nagakawa, N. Koshida, to be published.
Chen, 1997, Solid State Electron., 41, 757, 10.1016/S0038-1101(96)00248-1
Cazzanelli, 1999, J. Appl. Phys., 85, 1760, 10.1063/1.369320
Canham, 1996, Adv. Mater., 8, 847, 10.1002/adma.19960081019
Canham, 1996, Adv. Mater., 8, 850, 10.1002/adma.19960081020
