Plasma immersion ion implantation—a fledgling technique for semiconductor processing

Conrad, 1987, J. Appl. Phys., 62, 4591, 10.1063/1.339055 Tendys, 1988, Appl. Phys. Lett., 53, 2143, 10.1063/1.100299 Chen, 1994, J. Vac. Sci. Technol. B, 12, 918, 10.1116/1.587327 Xia, 1994, J. Vac. Sci. Technol. B, 12, 931, 10.1116/1.587330 Smith, 1994, J. Vac. Sci. Technol. B, 12, 940, 10.1116/1.587332 Gunzel, 1994, J. Vac. Sci. Technol. B, 12, 927, 10.1116/1.587329 Walter, 1994, J. Vac. Sci. Technol. B, 12, 945, 10.1116/1.587333 Collins, 1995, Surf Coat. Technol., 74–75, 417, 10.1016/0257-8972(95)08370-7 Komvopoulos, 1994, J. Appl. Phys., 76, 1656, 10.1063/1.358516 Cheung, 1991, Nucl. Instrum. Methods in Phys. Res., B55, 811, 10.1016/0168-583X(91)96285-S Qian, 1991, Appl. Phys. Lett., 53, 348, 10.1063/1.106392 Pico, 1991, 223, 115 Qian, 1991, Nucl. Instrum. Methods Phys. Res., B55, 821, 10.1016/0168-583X(91)96286-T Pico, 1992, J. Electron. Mater., 21, 75, 10.1007/BF02670923 Jones, 1992, 373 Jones, 1993, IEEE Elec. Dev. Lett., 14, 444, 10.1109/55.244712 Jones, 1992, Mat. Res. Soc. Proc., 279, 255, 10.1557/PROC-279-255 Chapek, 1994, J. Vac. Sci. Technol. B, 12, 951, 10.1116/1.587334 Jones, 1994, J. Vac. Sci. Technol. B, 12, 956, 10.1116/1.587335 Qin, 1994, J. Vac. Sci. Technol. B, 12, 962, 10.1116/1.587336 Yu, 1993, Nucl. Instrum. Methods in Phys. Res., B79, 655 Yu, 1994, IEEE Electron Device Lett., 15, 196, 10.1109/55.286690 Felch, 1995 Sheng, 1994, J. Vac. Sci. Technol. B, 12, 969, 10.1116/1.587337 Felch, 1993, Nucl. Instrum. Methods, B74 Min, 1995, Mater. Chem. Phys., 40, 219, 10.1016/0254-0584(95)01474-8 Min, 1995, Chinese J. Semiconductors, 16, 636 Min, 1996, Surf. Coatings Technol., 85, 60, 10.1016/0257-8972(96)02885-X Liu, 1995, Appl. Phys. Lett., 67, 2361, 10.1063/1.114345 Min, 1994, 153 Min, 1994, 238 Liu, 1994, Mater. Res. Soc. Proc., 354, 117, 10.1557/PROC-354-117 Liu, 1995 Min, 1995, 253 Liu, 1995, 166 Bernstein, 1995, IEEE Elec. Dev. Lett., 16, 421, 10.1109/55.464804 Yu, 1994, IEEE Elec. Dev. Lett., 15, 196, 10.1109/55.286690 Yu, 1992, 369 Qian, 1991, Nucl. Instrum. Methods, B55, 898, 10.1016/0168-583X(91)96303-3 Qian, 1991, Nucl. Instrum. Methods, B55, 888, 10.1016/0168-583X(91)96301-Z Qian, 1991, Nucl. Instrum. Methods, B55, 893, 10.1016/0168-583X(91)96302-2 Kiang, 1991, 223, 377 Kiang, 1991, 223, 377 Kiang, 1992, 265, 187 Kiang, 1992, Appl. Phys. Lett., 60, 2767, 10.1063/1.106871 Pico, 1991, Solid State Technol., 5, 81 Malik, 1994, J. Vac. Sci. Technol. B, 12, 843, 10.1116/1.587357 Matossian, 1994, J. Vac. Sci. Technol. B, 12, 850, 10.1116/1.587358 Tang, 1994, J. Vac. Sci. Technol. B, 12, 867, 10.1116/1.587361 Thomae, 1995, Nucl. Instrum. Methods in Phys. Res., B99, 569, 10.1016/0168-583X(95)00228-6 Tang, 1995 B.Y. Tang, S.Y. Wang and P.K. Chu, Users' Manual of the City University PIII System. Qian, 1991, Nucl. Instrum. Methods, B55, 884, 10.1016/0168-583X(91)96300-A Kwong, 1987, J. Appl. Phys., 61, 5084, 10.1063/1.338333 Osburn, 1993, Nucl. Instrum. Methods, B74, 53, 10.1016/0168-583X(93)95013-U Jiang, 1992, J. Electrochem. Soc., 139, 196, 10.1149/1.2069169 Hsieh, 1990, Appl. Phys. Lett., 56, 1178, 10.1063/1.103097 Nishizawa, 1990, Appl. Phys. Lett., 56, 1334, 10.1063/1.103180 Saitoh, 1993, Jpn. J. Appl. Phys., 32, 4404, 10.1143/JJAP.32.4404 Ransom, 1994, J. Electrochem. Soc., 141, 1378, 10.1149/1.2054928 Matsumoto, 1990, Jpn. J. Appl. Phys., 67, 7204, 10.1063/1.344553 Ishida, 1993, 1904, 87 Ishida, 1994 Weiner, 1994, 2091, 63 Hansen, 1985 Qin, 1992, Plasma Source Sci. Technol., 1, 1, 10.1088/0963-0252/1/1/001 Qin, 1995, Nucl. Instrum. Methods Phys. Res., B106, 636, 10.1016/0168-583X(95)00779-2 Qin, 1996, J. Electronic Materials, 25, 507, 10.1007/BF02666628 Qin, 1995 Shao, 1995, J. Vac. Sci. Technol., A13, 332, 10.1116/1.579418 Qin, 1991, IEEE Trans. Plasma Sci., 19, 1272, 10.1109/27.125051 Qin, 1992, IEEE Trans. Plasma Sci., 20, 569, 10.1109/27.163596 Lieberman, 1989, J. Appl. Phys., 66, 2926, 10.1063/1.344172 Scheuer, 1990, J. Appl. Phys., 67, 1241, 10.1063/1.345722 Stewart, 1991, J. Appl. Phys., 70, 3481, 10.1063/1.349240 Qin, 1994, J. Electronic Mat., 23, 337, 10.1007/BF02670644 Sze, 1985, Semiconductor Devices Physics and Technology, 107 Sze, 1985, Semiconductor Devices Physics and Technology, 52 Vogt, 1991, Solid State Technol., 23, 79 Colinge, 1991, Silicon-on-Insulator Technology: Materials to VLSI, 10.1007/978-1-4757-2121-8 Izumi, 1992 Ruffell, 1987, Nucl. Instrum. Methods, B21, 229, 10.1016/0168-583X(87)90833-0 Guerra, 1992, Mater. Sci. Eng., B12, 145, 10.1016/0921-5107(92)90275-E Robinson, 1991, Nucl. Instrum. Methods, B55, 555, 10.1016/0168-583X(91)96229-E Kamins, 1980, IEEE Electron Device Lett., 1, 159, 10.1109/EDL.1980.25272 Wu, 1991, IEEE Electron Device Lett., 12, 181, 10.1109/55.75757 Mitra, 1991, J. Electrochem. Soc., 138, 181, 10.1149/1.2085426 Takeshita, 1988, Jpn. J. Appl. Phys., 27, 3420 Ditizio, 1990, Appl. Phys. Lett., 56, 1140, 10.1063/1.102543 Baert, 1993, Jpn. J. Appl. Phys., 32, 2601, 10.1143/JJAP.32.2601 Qin, 1995 Woods, 1993, J. Appl. Phys., 73, 4770, 10.1063/1.353841 Ziegler, 1985 Kakoschke, 1990, IEEE Trans. Electron Dev., 37, 1052, 10.1109/16.52441 Mizuno, 1988, Appl. Phys. Lett., 53, 2059, 10.1063/1.100318 Griffioen, 1987, Nucl. Instrum. Methods, B27, 417, 10.1016/0168-583X(87)90522-2 Follstaedt, 1994, 279, 105 Seager, 1994, Phys. Rev. B, 50, 2458, 10.1103/PhysRevB.50.2458 Siegele, 1995, Appl. Phys. Lett., 66, 1319, 10.1063/1.113228 J. Min, X. Lu, S.S.K. Iyer, P. Chu and N.W. Cheung, Thin Solid Films, in press. Myer, 1994, 316, 33 Wong-Leung, 1995, Appl. Phys. Lett., 66, 1231, 10.1063/1.113246 Wong-Leung, 1995, Appl. Phys. Lett., 67, 416, 10.1063/1.114647 Conrad, 1987, J. Appl. Phys., 62, 777, 10.1063/1.339858 Shamim, 1991, J. Appl. Phys., 69, 2904, 10.1063/1.348600 Widner, 1970, Phys. Fluids, 13, 2532, 10.1063/1.1692823 Chester, 1970, J. Sci. Technol., 37, 2 Emmert, 1992, J. Appl. Phys., 71, 113, 10.1063/1.350740 Hanh, 1992, Jpn. J. Appl. Phys., 31, 2570, 10.1143/JJAP.31.2570 Wood, 1993, J. Appl. Phys., 73, 4770, 10.1063/1.353841 Z. Xia, S. Meassick and C. Chan, submitted to J. Appl. Phys., Chapman, 1980, Glow Discharge Processes, 107 Lieberman, 1988, IEEE Trans. Plasma Science, 16, 638, 10.1109/27.16552 S. Qin, Z. Jin and C. Chan, submitted to Nucl. Instrum. Methods B. Szapiro, 1988, J. Appl. Phys., 53, 358 Szapiro, 1989, J. Appl. Phys., 65, 3713, 10.1063/1.342600 Thomas, 1994, J. Vac. Sci. Technol B, 12, 901, 10.1116/1.587324 Qin, 1995, J. Appl. Phys., 78, 55, 10.1063/1.360640 Birdsall, 1991, IEEE Trans. Plasma Sci., 19, 65, 10.1109/27.106800 Codes available from Industrial Liaison Program, EECS Department, UC Berkeley, CA 94720. Private communication with Dr. P. Sferiazzo of Eaton Corporation. Qin, 1996, J. Appl. Phys., 79 Wolf, 1986, 288 Ziegler, 1985, The Stopping and Range of Ions in Solids, 194 Emmert, 1994, J. Vac. Sci. Technol., B 12, 880, 10.1116/1.587364 En, 1996, Surf. Coatings Technol., 85, 64, 10.1016/0257-8972(96)02882-4 Qin, 1995, J. Vac. Sci. Technol. B, 13, 1994, 10.1116/1.588121 S. Qin, T. Nakatsugawa, Y. Zhou, I. Hussein, C. Chan and T.-J. King, submitted to IEEE Electron Devices Lett. Xia, 1995, J. Vac. Sci. Technol. B, 13, 1999, 10.1116/1.588122 Shao, 1995, J. Vac. Sci. and Technol. A, 13, 332, 10.1116/1.579418 Mallavarpn, 1978, IEEE Trans. Plasma Sci., 6, 341, 10.1109/TPS.1978.4317141 Pichot, 1988, Rev. Sci. Instrum., 59, 1, 10.1063/1.1139728 Sadowski, 1967, Phys. Lett., 25A, 695, 10.1016/0375-9601(67)90480-X Chen, 1984, Introduction to Plasma Physics and Controlled Fusion, Vol. 1: Plasma Physics, 117 Chen, 1984, Introduction to Plasma Physics and Controlled Fusion, Vol. 1: Plasma Physics, 159 Suetsugu, 1984, Jpn. J. Appl. Phys., 23, 237, 10.1143/JJAP.23.237 Ryssel, 1982, 177 Ziegler, 1992 Chen, 1996, Solid State Technol., 39, 113, 10.1016/0038-1101(95)00085-8 Larson, 1996, 283 Chapman, 1980 Lieberman, 1994 Mizuno, 1987, 319