Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.

Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183–191.

Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science 2010, 327, 662–662.

Geim, A. K. Graphene: Status and prospects. Science 2009, 324, 1530–1534.

Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766–3798.

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.

Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature 2005, 438, 197–200.

Mak, K. F.; Lee, C. G.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.

Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934–9938.

Wang, H.; Yu, L. L.; Lee, Y.-H.; Shi, Y. M.; Hsu, A.; Chin, M. L.; Li, L.-J.; Dubey, M.; Kong, J.; Palacios, T. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 2012, 12, 4674–4680.

Zhu, W. J.; Low, T.; Lee, Y.-H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F. N.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 2014, 5, 3087.

Morita, A. Semiconducting black phosphorus. Appl. Phys. A 1986, 39, 227–242.

Takahashi, T.; Tokailin, H.; Suzuki, S.; Sagawa, T.; Shirotani, I. Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy. J. Phys. C: Solid State Phys. 1985, 18, 825.

Li, L. K.; Yu, Y. J.; Ye, G. J.; Chen, X. H.; Zhang, Y. B. Electronic properties of few-layer black phosphorus. In APS March Meeting Abstracts, Baltimore, Maryland, 2013, pp 6013.

Liu, Y. L.; Nan, H. Y.; Wu, X.; Pan, W.; Wang, W. H.; Bai, J.; Zhao, W. W.; Sun, L. T.; Wang, X. R.; Ni, Z. H. Layer-by-layer thinning of MoS2 by plasma. ACS Nano 2013, 7, 4202–4209.

Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laser-thinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187–3192.

Ni, Z. H.; Wang, H. M.; Kasim, J.; Fan, H. M.; Yu, T.; Wu, Y. H.; Feng, Y. P.; Shen, Z. X. Graphene thickness determination using reflection and contrast spectroscopy. Nano Lett. 2007, 7, 2758–2763.

Mak, K. F.; Sfeir, M. Y.; Wu, Y.; Lui, C. H.; Misewich, J. A.; Heinz, T. F. Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 2008, 101, 196405.

Sugai, S.; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 1985, 53, 753–755.

Molina-Sánchez, A.; Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 2011, 84, 155413.

Lee, C. G.; Yan, H. G.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single-and few-layer MoS2. ACS Nano 2010, 4, 2695–2700.

Appalakondaiah, S.; Vaitheeswaran, G.; Lebègue, S.; Christensen, N. E.; Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 2012, 86, 035105.

Sugai, S.; Ueda, T.; Murase, K. Pressure dependence of the lattice vibration in the orthorhombic and rhombohedral structures of black phosphorus. J. Phys. Soc. Jpn. 1981, 50, 3356–3361.

Qiao, J. S.; Kong, X. H.; Hu, Z.-X.; Yang, F.; Ji, W. Few-layer black phosphorus: Emerging 2D semiconductor with high carrier mobility and linear dichroism. arXiv preprint, 2014, arXiv:1401.5045.

Wang, Y. Y.; Ni, Z. H.; Shen, Z. X.; Wang, H. M.; Wu, Y. H. Interference enhancement of Raman signal of graphene. Appl. Phys. Lett. 2008, 92, 043121.

Koh, Y. K.; Bae, M.-H.; Cahill, D. G.; Pop, E. Reliably counting atomic planes of few-layer graphene (n > 4). ACS Nano 2010, 5, 269–274.

Takao, Y.; Asahina, H.; Morita, A. Electronic structure of black phosphorus in tight binding approach. J. Phys. Soc. Jpn. 1981, 50, 3362–3369.