Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

M. Kon, P.K. Song, Y. Shigesato, P. Frach, S. Ohno, K. Suzuki, Jpn. J. Appl. Phys 42, 263 (2003). doi: 10.1143/JJAP.42.263

S. Sohn, K. Park, D. Lee, D. Jung, H.M. Kim, U. Manna et al., Jpn. J. Appl. Phys 45, 3733 (2006). doi: 10.1143/JJAP.45.3733

Y. He, J. Kanicki, Appl. Phys. Lett 76, 661 (2000). doi: 10.1063/1.125854

J.J. Ho, C.Y. Chen, J. Electrochem. Soc 152, G57 (2005). doi: 10.1149/1.1829431

X.T. Hao, L.W. Tan, K.S. Ong, F. Zhu, J. Cryst. Growth 287, 44 (2006). doi: 10.1016/j.jcrysgro.2005.10.040

K.J. Kim, Y.R. Park, Appl. Phys. Lett 78, 475 (2001). doi: 10.1063/1.1342042

N. Jedrecy, H.J. Von Bardeleben, Y. Zheng, J.-L. Cantin, Phys. Rev. B 69, 1 (2004). doi: 10.1103/PhysRevB.69.041308

K. Yim, H. Kim, C. Lee, J. Electroceram 17, 875 (2006). doi: 10.1007/s10832-006-7036-3

M. Ohyama, H. Kozuka, T. Yoko, Thin Solid Films 306(1), 78 (1997). doi: 10.1016/S0040-6090(97)00231-9

A.C. Rastogi, S.B. Desu, P. Bhattacharya, R.S. Katiyar, J. Electroceram 13, 345 (2004). doi: 10.1007/s10832-004-5124-9

T. Minani, S. Ida, T. Miyata, Y. Minamoto, Thin Solid Films 445, 268 (2003). doi: 10.1016/S0040-6090(03)01159-3

P.J. Kelly, R.D. Arnell, Vacuum 56, 159 (2000). doi: 10.1016/S0042-207X(99)00189-X

S. Schiller, K. Goedicke, J. Reschke, V. Kirchhoff, S. Schneider, F. Milde, Surf. Coat. Technol 61, 331 (1993). doi: 10.1016/0257-8972(93)90248-M

S.M. Rossnagel, J.J. Cuomo, W.D. Westwood, Handbook of Plasma Processing Technology (Noyes, Park Ridge, NJ, 1990), p. 233

P. Frach, U. Heisig, C. Gottfied, H. Walde, Surf. Coat. Technol. 59, 177 (1993). doi: 10.1016/0257-8972(93)90079-4

P.J. Kelly, R.D. Arnell, J. Vac. Sci. Technol. A 16, 2858 (1998). doi: 10.1116/1.581432

P.J. Kelly, R.D. Arnell, J. Vac. Sci. Technol. A 17, 945 (1999). doi: 10.1116/1.581669

A. Belkind, A. Freilich, R. Scholl, Surf. Coat. Technol. 108–109, 558 (1998). doi: 10.1016/S0257-8972(98)00635-5

J.W. Bradley, H. Baecker, P.J. Kelly, R.D. Arnell, Surf. Coat. Technol. 135, 221 (2001). doi: 10.1016/S0257-8972(00)00990-7

J.W. Bradley, H. Baecker, P.J. Kelly, R.D. Arnell, Surf. Coat. Technol. 142–144, 337 (2001)

J.W. Bradley, H. Baecker, Y. Arando-Gonzalvo, P.J. Kelly, R.D. Arnell, Plasma Sources Sci. Technol 11, 165 (2002). doi: 10.1088/0963-0252/11/2/307

C. Guillén, J. Herrero, Vacuum 82, 668 (2008). doi: 10.1016/j.vacuum.2007.10.013

P.J. Kelly, Y. Zhou, A. Postill, Thin Solid Films 426, 111 (2003). doi: 10.1016/S0040-6090(02)01332-9

V. Sittinger, F. Ruske, W. Werner, C. Jacobs, B. Szyszka, D.J. Christie, Thin Solid Films (2007). doi: 10.1016/j.tsf.2007.10.031

R.D. Shannon, Acta Crystallogr. A 32, 751 (1976). doi: 10.1107/S0567739476001551

J.F. Chang, H.L. Wang, M.H. Hon, J. Cryst. Growth 211, 93 (2000). doi: 10.1016/S0022-0248(99)00779-4

X. Jiang, C.L. Jia, B. Szyszka, Appl. Phys. Lett 80, 3090 (2002). doi: 10.1063/1.1473683

E.G. Fu, D.M. Zhuang, G. Zhang, M. Zhao, W.-F. Yang, J.-F. Liu, Microelectron. J 35, 383 (2004). doi: 10.1016/S0026-2692(03)00251-9

S.Y. Lee, Y. Li, J.S. Lee, J.K. Lee, M. Nastasi, S.A. Crooker et al., Appl. Phys. Lett 85, 218 (2003). doi: 10.1063/1.1771810

H.S. Kang, J.S. Kang, J.W. Kim, S.Y. Lee, J. Appl. Phys 95, 1246 (2004). doi: 10.1063/1.1633343

Y.M. Hu, C.W. Lin, J.C.A. Huang, Thin Solid Films 497, 130 (2006). doi: 10.1016/j.tsf.2005.10.058

T. Minami, H. Sato, H. Nanto, S. Takata, Jpn. J. Appl. Phys 24(10), L781 (1985). doi: 10.1143/JJAP.24.L781

R. AlAsmar, S. Juillaguet, M. Ramonda, A. Giani, P. Combette, A. Khoury et al., J. Cryst. Growth 275, 512 (2005). doi: 10.1016/j.jcrysgro.2004.12.034

R.A. Smith, Semiconductors (Cambridge University, Cambridge, 1968), p. 189

E. Burstein, Phys. Rev 93, 632 (1954). doi: 10.1103/PhysRev.93.632

N. Ashkenov, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann et al., J. Appl. Phys 93, 126 (2003). doi: 10.1063/1.1526935

K. Samanta, P. Bhattacharya, R.S. Katiyar, W. Iwamoto, P.G. Pagliuso, C. Rettori, Phys. Rev. B 73, 245213 (2006). doi: 10.1103/PhysRevB.73.245213

W.B. Mi, H.L. Bai, H. Liu, C.Q. Sun, J. Appl. Phys 101, 023904 (2007). doi: 10.1063/1.2426377

J. Alaria, M. Bouloudenine, G. Schmerber, S. Colis, A. Dinia, P. Turek, M. Bernard, J. Appl. Phys 99, 08M118 (2006)

J.B. Wang, H.M. Zhong, Z.F. Li, W. Lua, Appl. Phys. Lett 88, 101913 (2006). doi: 10.1063/1.2185261