Photoemission measurements of quantum states in accumulation layers at narrow band gap III–V semiconductor surfaces

Applied Surface Science - Tập 166 - Trang 263-267 - 2000
V.Yu. Aristov1,2, V.M. Zhilin2, C. Grupp3, A. Taleb-Ibrahimi3, H.J. Kim4, P.S. Mangat5, P. Soukiassian6,7, G. Le Lay1
1CRMC2-CNRS, Campus de Luminy, Case 913, F-13288 Marseille Cedex, 09, France
2ISSP, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432, Russia
3LURE, Université de Paris-Sud, Bâtiment 209 D, 91405 Orsay Cedex, France
4Department of Semiconductor Science, Dongguk University, Seoul, South Korea
5Motorola, APR&D Lab. Semicond., 3501 Ed Bluestein Blvd., USA
6CEA, DSM-DRECAM-SPCSI-SIMA, Bât. 462, Centre d'Etudes de Saclay, F-91191 Gif sur Yvette Cedex, France
7Departement de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France

Tài liệu tham khảo

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