Photoemission Study of the a-Si-H/a-SiOx:H and a-Si:H/a-SiN:H Interface Formation
Tóm tắt
We report a study of the interface formation between a-Si:H and a-SiOx:H or a-SiN:H in the coverage regime from a submonolayer to a few layers. The films were grown by plasma assisted CVD and characterized by photoemission. Our studies show that the growth mechanism is different for a-SiOx:H on a-Si:H than for a-Si:H on a a-Si:Ox:H. The growth of the a-SiNx:H/a-Si:H interface on the other hand is independent of the direction.
Tài liệu tham khảo
L. Yang, B. Abeles, H. Stasiewski, these proceedings
M. Sansone, R. Hewitt, D. Sondericker, W. Eberhardt to be published
G. Hol linger, F. J. Himpsel, J. Vac. sci. Techn. Al, 640 (1983)
L. Ley, J. Reichardt, R. L. Johnson, Phys. Rev. Lett. 49, 1664 (1982)
R. Kärcher, L. Ley, R. L. Johnson, Phys. Rev. B30, 1896 (1984)
B. Abeles, I. Wagner, W. Eberhardt, J. Stöhr, H. Stasiewski, F. Sette, AIP Conference Proceedings, Vol. 120, p. 394 (1985) ed. by P. C. Taylor and S. G. Bishop
B. Abeles, L. Yang, W. Eberhardt, Proceedings of the International Workshop on Amorphous Semiconductors, Beijing 1986
L. Yang, B. Abeles, W. Eberhardt, D. Sondericker to be published
C. R. Wronski, P. D. Persans, B. Abeles, Appl. Phys. Lett 49, 569 (1986)
O. Zdetsis, E. N. Economu, D. A. Papaconstantopoulos, N. Flytzanis, Phys. Rev. B31, 2410 (1985)
C. Roxlo and B. Abeles, Phys. Rev. B34, 2522 (1986).