Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape
Tóm tắt
Two dimensional excitonic devices are of great potential to overcome the dilemma of response time and integration in current generation of electron or/and photon based systems. The ultrashort diffusion length of exciton arising from ultrafast relaxation and low carrier mobility greatly discounts the performance of excitonic devices. Phonon scattering and exciton localization are crucial to understand the modulation of exciton flux in two dimensional disorder energy landscape, which still remain elusive. Here, we report an optimized scheme for exciton diffusion and relaxation dominated by phonon scattering and disorder potentials in WSe2 monolayers. The effective diffusion coefficient is enhanced by > 200% at 280 K. The excitons tend to be localized by disorder potentials accompanied by the steadily weakening of phonon scattering when temperature drops to 260 K, and the onset of exciton localization brings forward as decreasing temperature. These findings identify that phonon scattering and disorder potentials are of great importance for long-range exciton diffusion and thermal management in exciton based systems, and lay a firm foundation for the development of functional excitonic devices.
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