Performance evaluation of a Schottky SiC power diode in a boost PFC application

G. Spiazzi1, S. Buso1, M. Citron1, M. Corradin1, R. Pierobon1
1Department of Electronics and Informatics, University of Padova, Padova, Italy

Tóm tắt

The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector with average current mode control (PFC) is considered as a key application. Measurements of overall efficiency, switch and diode losses and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the recently presented STTH5R06D. The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior.

Từ khóa

#Silicon carbide #Schottky diodes #Switches #Electromagnetic interference #Reactive power #Power measurement #Loss measurement #Electromagnetic measurements #Magnetic losses #Performance evaluation

Tài liệu tham khảo

philippen, 2001, A New High Voltage Schottky Diode based on Silicon Carbide (SiC), Proc EPE 2001 Conf 10.1049/el:20010535 10.1109/IAS.2001.955450 10.1109/IAS.2001.955447 10.1109/28.833776 10.1049/el:20000849 zverev, 2001, SiC Schottky rectifiers: performance, reliability and key application, Proc EPE 2001 Conf