Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of Science: Advanced Materials and Devices - Tập 5 - Trang 192-198 - 2020
P. Murugapandiyan1, A. Mohanbabu2, V. Rajya Lakshmi1, V.N. Ramakrishnan3, Arathy Varghese4, MOHD Wasim5, S. Baskaran6, R. Saravana Kumar7, V. Janakiraman8
1Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India
2Department of Electronics and Communication Engineering, Karpagam College of Engineering, Coimbatore, India
3Department of Micro & Nanoelectronics, School of Electronics Engineering, VIT, Vellore, India
4Department of Department of Electrical Engineering, Indian Institute of Technology, Bombay, India
5Department of Electronics and Communication Engineering, Lovely Professional University, Jalandar, India
6Department of Electronics and Communication Engineering, SKP Engineering College, Thiruvannamalai, India
7Department of Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India
8Department of Electronics and Communication Engineering, Dhanalakshmi Srinivasan College of Engineering and Technology, Mamallapuram, India

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Journal of Science: Advanced Materials and Devices

Tập 5

192-198

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