Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289) - Tập 3 - Trang 1269-1276 vol.3
Tóm tắt
A detailed parameter extraction sequence for the comprehensive silicon carbide (SiC) power diode model Is presented. The extraction sequence Is applicable to any SiC diode technology. It is demonstrated for a 1.5 kV, 10 A merged PIN Schottky (MIPS); 5 kV, 20 A PiN; 10 kV, 5 A PiN; and the new commercially available 600 V, 1 A and 4 A Schottky diodes.
Từ khóa
#Parameter extraction #Silicon carbide #Schottky diodes #Semiconductor diodes #Circuit simulation #Temperature dependence #Voltage #Rectifiers #Leakage current #NISTTài liệu tham khảo
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