Parallel magnetoresistance and phase relaxation length and the three-dimensional to two-dimensional transition of electronic transport in a GaAs MESFET

Surface Science - Tập 170 - Trang 701-707 - 1986
D.J. Newson1, M. Pepper1
1Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK

Tài liệu tham khảo

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